Fri, Oct 26 PM
13:00 - 18:20 |
| (1) |
13:00-13:25 |
Deposition characteristics of ZnO thin films using high-energy H2O genarated by a catalytic reaction |
Kanji Yasui, Hitoshi Miura, Masami Tahara, Souichi Satomoto (Nagaoka Univ. Technol.) |
| (2) |
13:25-13:50 |
Electronic properties of ZnO thin films grown on a-plane sapphire substrates using high-energy H2O generated by a catalytic reaction
-- Analysis using a two layer model -- |
Eichi Nagatomi, Naoya Yamaguchi, Tomohiko Takeuchi, Souichi Satomoto, Takahiro Kato, Kanji Yasui (Nagaoka Univ. Technol.) |
| (3) |
13:50-14:15 |
Effect of a low-temperature buffer layer on the properties of ZnO films grown on glass substrates using catalytically generated high-energy H2O |
Takahiro Oyanagi, Kazuki Takezawa, Takahiro Kato (Nagaoka Univ. Technol), Hironori Katagiri, Kazuo Jimbo (NNCT), Kanji Yasui (Nagaoka Univ. Technol) |
| (4) |
14:15-14:40 |
Examination of Resistivity of AZO Thin Films Deposited by Sputtering Method |
Katsuhito Nagoshi, Yusuke Tomiguchi, Hidehiko Shimizu, Haruo Iwano, Takahiro Kawakami, Yasuo Fukushima, Kotaro Nagata, Nozomu Tsuboi, Takahiro Nomoto (Niigata Univ.) |
| |
14:40-14:50 |
Break ( 10 min. ) |
| (5) |
14:50-15:15 |
Cu2ZnSnS4 Thin Film Solar Cells Prepared by Non-Vacuum Processing
-- Improvement of Conversion Efficiency by Investigation of Window Layer Deposition Process -- |
Kunihiko Tanaka, Takumi Aizawa, Hisao Uchiki (NUT) |
| (6) |
15:15-15:40 |
Fabrication of three-dimensional-structure solar cell with Cu2ZnSnS4 |
Masato Kurokawa, Kunihiko Tanaka, Minoru Kato, Tomotake Naganuma, Yoshiki Nagahashi, Hisao Uchiki (Nagaoka Univ. of Tec.) |
| (7) |
15:40-16:05 |
Preparation of Cu2ZnSnS4 thin film by sol-gel sulfurization method with Cl free coating solutions |
Kota Sakuma, Kunihiko Tanaka, Takumi Aizawa, Yuya Nakano, Hisao Uchiki (NUT) |
| (8) |
16:05-16:30 |
Optimization of sulfurization in CZTS thin film solar cells |
Kento Higuchi, Tsukasa Washio, Kazuo Jimbo, Hironori Katagiri (NNCT) |
| |
16:30-16:40 |
Break ( 10 min. ) |
| (9) |
16:40-17:05 |
Formation of AlN layers on Si substrates and growth of 3C-SiC on AlN/Si substrates |
Hideki Nakazawa, Daiki Suzuki, Tsugutada Narita, Yohei Yamamoto (Hirosaki Univ.) |
| (10) |
17:05-17:30 |
Interface between GaP and Si substrates prepared using metalorganic vapor phase epitaxy |
Tatsuya Takagi, Ryo Miyahara, Yasushi Takano (Shizuoka Univ.) |
| (11) |
17:30-17:55 |
Formation of multi-phases of monosilicide and disilicide in Ni/Si system |
Atsushi Noya, Mayumi Takeyama, Masaru Sato, Susumu Tokuda (Kitami Inst. Technol.) |
| (12) |
17:55-18:20 |
Interfacial reaction and/or diffusion in Cu/metal/SiO2/Si system (I)
-- Diffusion behavior of Va transition metal -- |
Mayumi B. Takeyama, Atsushi Noya (Kitami Inst. of Technol.) |
Sat, Oct 27 AM
09:10 - 12:40 |
| (13) |
09:10-09:35 |
CuAlO2 film deposition by reactive sputtering using Cu/Al target prepared by Cold Spray method |
Takuya Yokomoto, Takashi Arai, Takayuki Kosaka, Kazuki Okajima, Tomohiko Yamakami, Katsuya Abe, Kazuhiko Sakaki (Shinshu Univ.) |
| (14) |
09:35-10:00 |
Examination of underlayer for SrAl2O4: Eu, Dy thin films by annealing methods |
Kazuaki Kobayashi, Hidehiko Shimizu, Haruo Iwano, Yasuo Fukushima, Takahiro Kawakami (Niigata Univ.) |
| (15) |
10:00-10:25 |
Mechanical Properties of the OLEDs and ITO Films Prepared on Plastic Substrates |
Hiroaki Matsui, Hidehiko Shimizu, Haruo Iwano, Yasuo Fukushima, Kotaro Nagata, Nozomu Tsuboi, Takahiro Nomoto (Niigata Univ.) |
| (16) |
10:25-10:50 |
Energy Transfer Process in YVO4:Bi Yellow Phosphor |
Taiga Abe, Kouta Taniguchi, Junpei Yagi, Ariyuki Kato (Nagaoka Univ. of Tech.) |
| |
10:50-11:00 |
Break ( 10 min. ) |
| (17) |
11:00-11:25 |
Manufacturing and Characterization of Graphene Intercalation Compounds |
Hiroshi Yamamoto, Hiroaki Ichikawa, Shogo Satoh, Nobuyuki Iwata (Nihon Univ.) |
| (18) |
11:25-11:50 |
Field Emission Characteristics Considering both the Shield Effect and Series Resistance |
Yuji Asada, Masahiro Yamashita, Tomohiko Yamakami, Rinpei Hayashibe, Kiichi Kamimura (Shinshu Univ.) |
| (19) |
11:50-12:15 |
Estimation of the number of junctions in the Bi-2212 stack by pulse current method |
Takahiro Kato, Tsubasa Nishikata, Yukio Kotaki, Hisayuki Suematsu, Kanji Yasui (Nagaoka Univ. Tech), Akira Kawakami (NICT) |
| (20) |
12:15-12:40 |
Photoluminescence characteristics of high-density Ge nanodots on Si substrate by gas source MBE |
Yutaka Anezaki, Kai Sato, Takahiro Kato, Ariyuki Kato, Hideyuki Toyota (Nagaoka Univ. Techno.), Maki Suemitsu (Tohoku Univ.), Hideki Nakazawa (Hirosaki Univ.), Yuzuru Narita (Yamagata Univ.), Kanji Yasui (Nagaoka Univ. Techno.) |