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Technical Committee on Silicon Device and Materials (SDM)
Chair: Yasuo Nara Vice Chair: Yuzou Oono (Univ. of Tsukuba)
Secretary: Yoshitaka Sasago (Hitachi)
Assistant: Rihito Kuroda (Tohoku Univ.)

DATE:
Thu, Oct 17, 2013 14:00 - 19:00
Fri, Oct 18, 2013 09:30 - 14:30

PLACE:
FFF, Niche, Tohoku University(FFF Neiche, Aza-Aoba 6-6-10, Aramaki, Aobaku, Sendai, 980-8579. Rihito Kuroda, Tohoku University. 022-795-3977)

TOPICS:
Process Science and New Process Technology

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Thu, Oct 17 PM (14:00 - 19:00)
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(1) 14:00 - 14:50
[Invited Talk]
Technological Trend of SiC Power Devices
Takashi Shinohe (TOSHIBA)

(2) 14:50 - 15:20
Electrical Properties and Reliability of Ultrathin HfN Gate Insulator Formed on Si(100) and Si(110)
Nithi Atthi, Dae-Hee Han, Shun-ichiro Ohmi (Tokyo Inst. of Tech.)

----- Break ( 20 min. ) -----

(3) 15:40 - 16:10
Effect of silicon surface roughness on 3-D MOS capacitor with ultrathin HfON gate insulator formed by ECR plasma sputtering
Dae-Hee Han, Shun-ichiro Ohmi (Tokyo Inst. of Tech.)

(4) 16:10 - 16:40
A device structure design of multi-gate MOSFETs based on carrier mobility characteristics of atomically flattened Si surface
Rihito Kuroda, Yukihisa Nakao, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.)

----- Break ( 20 min. ) -----

----- Banquet ( 120 min. ) -----

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Fri, Oct 18 AM (09:30 - 14:30)
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(5) 09:30 - 10:00
Si photodiode wiht high sensitivity and high stability to UV-light with 100% internal Q.E. and high transmittance on-chip multilayer dielectric stack
Yasumasa Koda, Rihito Kuroda, Yukihisa Nakao, Shigetoshi Sugawa (Tohoku Univ.)

(6) 10:00 - 10:30
A Study on Nitrogen-Doped LaB6 Thin Film Formation and Its Device Applications
Yasutaka Maeda, Shun-ichiro Ohmi (Tokyo Inst. of Tech.), Tetsuya Goto, Tadahiro Ohmi (Tohoku Univ.)

(7) 10:30 - 11:00
Introduction of the Bias Operation Hard X-ray Photoelectron Spectroscopy: Evaluation for Insulator/Si interface
Norihiro Ikeno, Kohki Nagata (Meiji Univ.), Hiroshi Oji, Ichiro Hirosawa (JASRI), Atsushi Ogura (Meiji Univ.)

(8) 11:00 - 11:30
Classical molecular dynamics simulations of plasma-induced physical damage
-- defect generation mechanisms in fin-type MOSFET --
Koji Eriguchi, Asahiko Matsuda, Yoshinori Nakakubo, Yoshinori Takao, Kouichi Ono (Kyoto Univ.)

----- Lunch ( 90 min. ) -----

(9) 13:00 - 13:30
Design method of stacked type non-volatile memory
Shigeyoshi Watanabe (Shonan Inst. of Tech.)

(10) 13:30 - 14:00
Effects of plasma-induced charging damage on random telegraph noise (RTN) behaviors in advanced MOSFETs
Masayuki Kamei, Yoshinori Nakakubo, Yoshinori Takao, Koji Eriguchi, Kouichi Ono (Kyoto Univ.)

(11) 14:00 - 14:30
Study of Time Constant Analysis in Random Telegraph Noise at the Subthreshold Voltage Region
Akihiro Yonezawa, Akinobu Teramoto, Toshiki Obara, Rihito Kuroda, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.)

# Information for speakers
General Talk will have 25 minutes for presentation and 5 minutes for discussion.
Invited Talk will have 40 minutes for presentation and 10 minutes for discussion.

=== Technical Committee on Silicon Device and Materials (SDM) ===
# FUTURE SCHEDULE:

Thu, Nov 14, 2013 - Fri, Nov 15, 2013: Kikai-Shinko-Kaikan Bldg. [Mon, Sep 9], Topics: Process, Device, Circuit Simulations, etc.
Fri, Dec 13, 2013: NAIST [Fri, Oct 11], Topics: Fabrication and Characterization of Si related materials
Wed, Jan 29, 2014: Kikai-Shinko-Kaikan Bldg.
Jan, 2014: [unfixed]

# SECRETARY:
Rihito Kuroda(Tohoku Univ.)
Tel 022-795-4833 Fax 022-795-4835
E-mail: