Conference Date |
Thu, Oct 17, 2013 14:00 - 19:00
Fri, Oct 18, 2013 09:30 - 14:30 |
Topics |
Process Science and New Process Technology |
Conference Place |
FFF, Niche, Tohoku University |
Address |
FFF Neiche, Aza-Aoba 6-6-10, Aramaki, Aobaku, Sendai, 980-8579 |
Contact Person |
Rihito Kuroda, Tohoku University
022-795-3977 |
Thu, Oct 17 PM 14:00 - 19:00 |
(1) |
14:00-14:50 |
[Invited Talk]
Technological Trend of SiC Power Devices |
Takashi Shinohe (TOSHIBA) |
(2) |
14:50-15:20 |
Electrical Properties and Reliability of Ultrathin HfN Gate Insulator Formed on Si(100) and Si(110) |
Nithi Atthi, Dae-Hee Han, Shun-ichiro Ohmi (Tokyo Inst. of Tech.) |
|
15:20-15:40 |
Break ( 20 min. ) |
(3) |
15:40-16:10 |
Effect of silicon surface roughness on 3-D MOS capacitor with ultrathin HfON gate insulator formed by ECR plasma sputtering |
Dae-Hee Han, Shun-ichiro Ohmi (Tokyo Inst. of Tech.) |
(4) |
16:10-16:40 |
A device structure design of multi-gate MOSFETs based on carrier mobility characteristics of atomically flattened Si surface |
Rihito Kuroda, Yukihisa Nakao, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) |
|
16:40-17:00 |
Break ( 20 min. ) |
|
17:00-19:00 |
Banquet ( 120 min. ) |
Fri, Oct 18 AM 09:30 - 14:30 |
(5) |
09:30-10:00 |
Si photodiode wiht high sensitivity and high stability to UV-light with 100% internal Q.E. and high transmittance on-chip multilayer dielectric stack |
Yasumasa Koda, Rihito Kuroda, Yukihisa Nakao, Shigetoshi Sugawa (Tohoku Univ.) |
(6) |
10:00-10:30 |
A Study on Nitrogen-Doped LaB6 Thin Film Formation and Its Device Applications |
Yasutaka Maeda, Shun-ichiro Ohmi (Tokyo Inst. of Tech.), Tetsuya Goto, Tadahiro Ohmi (Tohoku Univ.) |
(7) |
10:30-11:00 |
Introduction of the Bias Operation Hard X-ray Photoelectron Spectroscopy: Evaluation for Insulator/Si interface |
Norihiro Ikeno, Kohki Nagata (Meiji Univ.), Hiroshi Oji, Ichiro Hirosawa (JASRI), Atsushi Ogura (Meiji Univ.) |
(8) |
11:00-11:30 |
Classical molecular dynamics simulations of plasma-induced physical damage
-- defect generation mechanisms in fin-type MOSFET -- |
Koji Eriguchi, Asahiko Matsuda, Yoshinori Nakakubo, Yoshinori Takao, Kouichi Ono (Kyoto Univ.) |
|
11:30-13:00 |
Lunch ( 90 min. ) |
(9) |
13:00-13:30 |
Design method of stacked type non-volatile memory |
Shigeyoshi Watanabe (Shonan Inst. of Tech.) |
(10) |
13:30-14:00 |
Effects of plasma-induced charging damage on random telegraph noise (RTN) behaviors in advanced MOSFETs |
Masayuki Kamei, Yoshinori Nakakubo, Yoshinori Takao, Koji Eriguchi, Kouichi Ono (Kyoto Univ.) |
(11) |
14:00-14:30 |
Study of Time Constant Analysis in Random Telegraph Noise at the Subthreshold Voltage Region |
Akihiro Yonezawa, Akinobu Teramoto, Toshiki Obara, Rihito Kuroda, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) |