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=============================================== Technical Committee on Reliability (R) Chair: Shuichi Fukuda Vice Chair: Shigeru Yanagi Secretary: Kazuaki Wakai, Tetsushi Yuge Assistant: Yoshiyuki Ihara, Yoshino Fukai =============================================== Technical Committee on Electron Device (ED) Chair: Takao Waho Vice Chair: Masaaki Kuzuhara Secretary: Tsuyoshi Tanaka, Manabu Arai Assistant: Shin-ichiro Takatani DATE: Fri, Nov 25, 2005 10:10 - 16:20 PLACE: Chuo-Denki-Kurabu(2-1-25, Doujimahama, Kita-ku, Osaka-shi, Japan. 5 minutes walk from JR Osaka station, or 6 minutes walk from JR Kita-sinti station. http://www.chuodenki-club.or.jp/map/annai.html. 06-6345-6351) TOPICS: ---------------------------------------- Fri, Nov 25 AM (10:10 - 11:30) ---------------------------------------- (1) 10:10 - 10:50 [Invited Talk] Reliability Evaluation in Low Temperature Poly-Si Thin Film Transistors Yukiharu Uraoka, Takashi Fuyuki (NAIST) (2) 10:50 - 11:30 [Invited Talk] Barrier films prepared for organic electroluminescence device Akira Heya (Univ. of Hyogo), Toshiharu Minami (IRII), Toshikazu Niki, Shigehira Minami (Ishikawa Seisakusyo), Atsushi Masuda, Hironobu Umemoto (JAIST), Naoto Matsuo (Univ. of Hyogo), Hideki Matsumura (JAIST) ---------------------------------------- Fri, Nov 25 PM (13:10 - 16:20) ---------------------------------------- (3) 13:10 - 13:35 Development of accurate NBTI lifetime prediction and evaluation methods using hole injection Akinobu Teramoto, Kazufumi Watanabe, Rihito Kuroda (Tohoku Univ.), Michihiko Mifuji, Takahisa Ymaha (Rohm), Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) (4) 13:35 - 14:00 -- Ryouhei Uno, Haruhiko Yoshida, Shinichi Sato (Univ. of Hyogo) (5) 14:00 - 14:25 Localization Method of Failure Point with Scan Chain Takeshi Kataoka, Hisakazu Watanabe, Yasushi Kannan, Masaji Tanaka (Matsushita Electric Industrial) (6) 14:25 - 14:50 Highly reliable InP-based HBTs with a ledge structure operating at current density over 2mA/um2 Yoshino K. Fukai, Kenji Kurishima, Minoru Ida, Shoji Yamahata, Takatomo Enoki (NTT Photonics Labs.) ----- Break ( 15 min. ) ----- (7) 15:05 - 15:30 -- Yoichi Nogami, Takayuki Hisaka, Naohito Yoshida (Mitsubishi) (8) 15:30 - 15:55 Electrical characterization of n-GaN exposed to hydrogen plasma Masayuki Suda, Seiji Nakamura, Michihiko Suhara, Tsugunori Okumura (Tokyo Metropolitan Univ.) (9) 15:55 - 16:20 Investigation of gate leakage current and gate control anomalies in nanometer-scale Schottky gate AlGaN/GaN HFETs Seiya Kasai, Junji Kotani, Hideki Hasegawa, Tamotsu Hashizume (Hokkaido Univ.) # Information for speakers General Talk (25) will have 20 minutes for presentation and 5 minutes for discussion. Invited Talk (40) will have 35 minutes for presentation and 5 minutes for discussion. # CONFERENCE SPONSORS: - This conference is co-sponsored by the Reliability Engineering Association of Japan and IEEE-RS Japan Chapter === Technical Committee on Reliability (R) === # FUTURE SCHEDULE: Fri, Dec 16, 2005: Kikai-Shinko-Kaikan Bldg. [Fri, Oct 21], Topics: International standards on reliability, safety, reliability, etc. Jan, 2006: Recess Fri, Feb 17, 2006: [Fri, Dec 16] # SECRETARY: Kazuaki Wakai(NHK) TEL0480-85-1118,FAX0480-85-1508 E-mail:   i k-dm   === Technical Committee on Electron Device (ED) === # FUTURE SCHEDULE: Thu, Dec 22, 2005: [Mon, Oct 24] Wed, Jan 18, 2006 - Fri, Jan 20, 2006: Kikai-Shinko-Kaikan Bldg. [Thu, Nov 17], Topics: Compound Semiconductor IC and High-Speed, High-Frequency Devices Thu, Jan 26, 2006 - Fri, Jan 27, 2006: Hokkaido Univ. [Wed, Nov 16], Topics: - # SECRETARY: Tsuyoshi Tanaka（Matsushita） TEL: 075-956-9083, FAX: 075-956-9110 E-mail:       pa  c Manabu Arai（New JRC） TEL: 049-278-1477、FAX: 049-278-1419 E-mail:   injr Shinichiro Takatani（Hitachi） TEL: 049-278-1477、FAX: 049-278-1419 E-mail: injrLast modified: 2005-09-26 20:21:18 |
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