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=============================================== Technical Committee on Silicon Device and Materials (SDM) Chair: Takahiro Shinada (Tohoku Univ.) Vice Chair: Hiroshige Hirano (TowerJazz Panasonic) Secretary: Hiroya Ikeda (Shizuoka Univ.), Tetsu Morooka (TOSHIBA MEMORY) Assistant: Takahiro Mori (AIST), Nobuaki Kobayashi (Nihon Univ.) DATE: Mon, Jun 25, 2018 11:00 - 16:55 PLACE: TOPICS: Material Science and Process Technology for MOS Devices and Memories ---------------------------------------- Mon, Jun 25 AM (11:00 - 16:55) ---------------------------------------- (1) 11:00 - 11:20 Evaluation of Interface State Density in GaN-MOS Capacitors on Miscut m-plane GaN Substrates Manato Deki, Yuto Ando, Hirotaka Watanabe, Atsushi Tanaka, Maki Kushimoto, Shugo Nitta, Yoshio Honda, Hiroshi Amano (Nagoya Univ.) (2) 11:20 - 11:40 Comparative study of SiO2/GaN interface structures and properties between Ar and He as a mixture gas with oxygen for remote plasma chemical vapor deposition Nguyen Xuan Truyen (Nagoya Univ.), Noriyuki Taoka (AIST-NU GaN-OIL), Akio Ohta (Nagoya Univ.), Hisashi Yamada, Tokio Takahashi (AIST-NU GaN-OIL), Mitsuhisa Ikeda, Makihara Katsunori (Nagoya Univ.), Mitsuaki Shimizu (AIST-NU GaN-OIL), Seiichi Miyazaki (Nagoya Univ.) (3) 11:40 - 12:00 Control of SiO2/GaN Interface for High-performance GaN MOSFET Tauji Hosoi, Takahiro Yamada, Mikito Nozaki (Osaka Univ.), Tokio Takahashi, Hisashi Yamada, Mitsuaki Shimizu (AIST), Akitaka Yoshigoe (JAEA), Takayoshi Shimura, Heiji Watanabe (Osaka Univ.) (4) 12:00 - 12:20 Influence of native oxide layer on electrical characteristics of Al2O3/n-GaN capacitors Kazuya Yuge (SIT), Toshihide Nabatame, Yoshihiro Yoshikawa, Akihiko Ohi, Naoki Ikeda, Liwen Sang, Yasuo Koide (NIMS), Tomoji Ohishi (SIT) ----- Lunch break ( 70 min. ) ----- (5) 13:30 - 14:00 [Invited Lecture] Inversion channel diamond MOSFET -- Formation of diamond MOS interface by wet annealing -- Tsubasa Matsumoto (Kanazawa Univ.), Hiromitsu Kato, Toshiharu Makino, Masahiko Ogura, Daisuke Takeuchi (AIST), Takao Inokuma (Kanazawa Univ.), Satoshi Yamasaki (AIST), Norio Tokuda (Kanazawa Univ.) (6) 14:00 - 14:30 [Invited Lecture] Progress in Diamond Field Effect Transistors Hiroshi Kawarada, Nobutaka Oi, Bi Te, Shoichiro Imanishi, Masayuki Iwatakaki, Taichi Yabe, Atsushi Hiraiwa (Waseda Univ.) (7) 14:30 - 15:00 [Invited Lecture] Recent progress and problem of Diamond device: Crystal quality of bulk and surface Yukako Kato (AIST), Kouhei Takizawa (Tokyo City Univ.), Toshiharu Makino, Hiromitsu Kato, Masahiko Ogura, Daisuke Takeuchi, Satoshi Yamasaki (AIST), Hiroshi Nohira (Tokyo City Univ.) ----- Break ( 15 min. ) ----- (8) 15:15 - 15:35 Chemical Bonding Features and Thermal Stability at SiO2/GaN interfaces Formed by Remote O2 Plasma Enhanced CVD Ryohei Matsuda, Akio Ohta (Nagoya Univ.), Noriyuki Taoka (AIST), Mitsuhisa Ikeda, Katsunori Makihara (Nagoya Univ.), Mitsuaki Shimizu (AIST), Seiichi Miyazaki (Nagoya Univ.) (9) 15:35 - 15:55 Modification of Al2O3/SiC interface by oxygen radical irradiation Takuma Doi (Nagoya Univ.), Wakana Takeuchi (AIT), Mitsuo Sakashita (Nagoya Univ.), Noriyuki Taoka (AIST), Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) (10) 15:55 - 16:15 First principle investigation of superlattice GeTe/Sb2Te3 phase change Hiroaki Nohara, Hiroki Shirakawa, Masaaki Araidai, Kenji Shiraishi (Nagoya Univ.) (11) 16:15 - 16:35 Concern of Ferroelectric HfO2 Films Brought by Large Coercive Field Shinji Migita, Hiroyuki Ota (AIST), Akira Toriumi (Univ. Tokyo) (12) 16:35 - 16:55 XPS Study of Silicate Formation and Electrical Dipole at Y2O3/SiO2 Interfaces Nobuyuki Fujimura, Akio Ohta, Mitsuhisa Ikeda, Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ.) # Information for speakers General Talk will have 15 minutes for presentation and 5 minutes for discussion. Invited Lecture will have 25 minutes for presentation and 5 minutes for discussion. # CONFERENCE SPONSORS: - This conference is co-sponsored by The Japan Society of Applied Physics. === Technical Committee on Silicon Device and Materials (SDM) === # FUTURE SCHEDULE: Tue, Aug 7, 2018 - Thu, Aug 9, 2018: Hokkaido Univ., Graduate School of IST M Bldg., M151 [Tue, Jun 19], Topics: Analog, Mixed Analog and Digital, RF, and Sensor Interface, Low Voltage/Low Power Techniques, Novel Devices/Circuits, and the Applications # SECRETARY: Rihito Kuroda(Tohoku Univ.) Tel 022-795-4833 Fax 022-795-4834 E-mail:        e3   Last modified: 2018-04-20 18:00:03 |
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