研究会終了後に懇親会を開催いたします.
|
Chair |
|
Yasuo Nara (Fujitsu Semiconductor) |
Vice Chair |
|
Yuzou Oono (Tohoku Univ.) |
Secretary |
|
Shintaro Nomura (Univ. of Tsukuba), Yoshitaka Sasago (Hitachi) |
|
Conference Date |
Thu, Jun 21, 2012 09:00 - 18:00 |
Topics |
Science and Technology for Dielectric Thin Films for Electron Devices |
Conference Place |
VBL, Nagoya University |
Address |
Furo-cho, Chikusa-ku, Nagoya, Aichi, 464-8603, Japan |
Transportation Guide |
http://www.vbl.nagoya-u.ac.jp/access/index.html |
Contact Person |
Prof. Seiichi Miyazaki
+81-52-789-3588 |
Sponsors |
This conference is co-sponsored by The Japan Society of Applied Physics.
|
Thu, Jun 21 AM 09:00 - 18:00 |
(1) |
09:00-09:20 |
Evaluation of Chemical Structures and Resistive Switching Behaviors of Pt/Si rich Oxide/TiN System |
Motoki Fukusima (Nagoya Univ.), Akio Ohta (Hiroshima Univ.), Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ.) |
(2) |
09:20-09:40 |
Resistive Switching Properties of Directly Bonded SrTiO3 Substrate |
Ryota Asada, Pham Phu Thanh Son, Kokate Nishad Vasant, Jun Kikkawa, Shotaro Takeuchi, Yoshiaki Nakamura, Akira Sakai (Osaka Univ.) |
(3) |
09:40-10:00 |
Photoexcited Carrier Transfer in NiSi-Nanodots/Si-Quantum-Dots Hybrid Floating Gate in MOS Structures |
Mitsuhisa Ikeda (Hiroshima Univ.), Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ.) |
(4) |
10:00-10:20 |
Nanodot-type Floating Gate Memory with High-density Nanodot Array Formed Utilizing Listeria Dps |
Hiroki Kamitake, Kosuke Ohara, Mutsunori Uenuma, Bin Zheng, Yasuaki Ishikawa, Ichiro Yamashita, Yukiharu Uraoka (NAIST) |
(5) |
10:20-10:40 |
High-mobility Ge MOSFETs with ultrathin GeON gate dielectrics |
Yuya Minoura, Atsushi Kasuya, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe (Osaka Univ.) |
|
10:40-10:55 |
Break ( 15 min. ) |
(6) |
10:55-11:15 |
Clarification of Interfacial Reaction Mechanism in O2 Annealing or O radical Process for Al2O3/Ge Structure |
Shigehisa Shibayama, Kimihiko Kato, Mitsuo Sakashita, Wakana Takeuchi, Noriyuki Taoka, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) |
(7) |
11:15-11:35 |
Interface Reaction Control of HfO2/Ge structure by an Insertion of TaOx layer |
Hideki Murakami, Kento Mishima, Akio Ohta, Kuniaki Hashimoto, Seiichiro Higashi (Hiroshima Univ.), Seiichi Miyazaki (Nagoya Univ.) |
(8) |
11:35-11:55 |
Effect of Reducing Character of Gate Metals on Pr Valence State in Pr Oxide Film on Ge Substrate |
Kimihiko Kato, Mitsuo Sakashita, Wakana Takeuchi, Noriyuki Taoka, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) |
(9) |
11:55-12:15 |
Oxygen-induced high-k dielectric degradation in TiN/Hf-based high-k gate stacks |
Takuji Hosoi, Yuki Odake, Hiroaki Arimura, Keisuke Chikaraishi, Naomu Kitano, Takayoshi Shimura, Heiji Watanabe (Osaka Univ.) |
(10) |
12:15-12:35 |
Evaluation of Al atoms as a function of annealing temperature for (TaC)1-xAlx/HfO2 gate stack |
Masayuki Kimura (Shibaura Inst. of Tech.), Toshihide Nabatame (NIMS), Hiroyuki Yamada (Shibaura Inst. of Tech.), Akihiko Ohi, Toshihiro Narushima, Toyohiro Chikyow (NIMS), Tomoji Ohishi (Shibaura Inst. of Tech.) |
|
12:35-13:35 |
Lunch Break ( 60 min. ) |
(11) |
13:35-13:55 |
Surface Segregation Behavior of B, Ga, Sb, and As Dopant Atoms on Ge(100) and Ge(111) Examined with a First-principles Method |
Fumiya Iijima, Kentaro Sawano (TCU), Jiro Ushio (CRL), Takuya Maruizumi, Yasuhiro Shiraki (TCU) |
(12) |
13:55-14:15 |
Control of Schottky Barrier Height at Al/Ge Junctions by Ultrathin Layer Insertion |
Akio Ohta, Masafumi Matsui, Hideki Murakami, Seiichiro Higashi (Hiroshima Univ.), Seiichi Miyazaki (Nagoya Univ.) |
(13) |
14:15-14:35 |
Relation between Schottky-barrier change and structural disorders at metal/(Si,Ge) interfaces: First-principles study |
Kyosuke Kobinata, Takashi Nakayama (Chiba Univ.) |
|
14:35-14:45 |
Short Break ( 10 min. ) |
(14) |
14:45-15:05 |
Chemical Analysis of As+-implanted Ge(100) |
Takahiro Ono, Akio Ohta, Hideki Murakami, Seiichiro Higashi (Hiroshima Univ.), Seiichi Miyazaki (Nagoya Univ.) |
(15) |
15:05-15:30 |
Detection of impurities having various chemical bonding states and their depth profiles in ultra shallow junctions |
Kazuo Tsutsui, Jun Kanehara, Youhei Miyata (Tokyo Tech.), Hiroshi Nohira (Tokyo City Univ.), Yudai Izumi, Takayuki Muro, Toyohiko Kinoshita (JASRI), Parhat Ahmet, Kuniyuki Kakushima, Takeo Hattori, Hiroshi Iwai (Tokyo Tech.) |
(16) |
15:30-15:55 |
Schottky Barrier Height Lowering by Dopant Segregation and Exact Control of Junction Position in Epitaxial NiSi2 Source/Drain |
Wataru Mizubayashi, Shinji Migita, Yukinori Morita, Hiroyuki Ota (AIST) |
(17) |
15:55-16:20 |
Doping and behaviors of impurity atoms in silicon nanowires
-- Segregation behaviors of dopant atoms during thermal oxidation -- |
Naoki Fukata (NIMS), Ryo Takiguchi, Shinya Ishida, Shigeki Yokono (Univ. of Tsukuba), Takashi Sekiguchi (NIMS), Kouichi Murakami (Univ. of Tsukuba) |
|
16:20-16:35 |
Break ( 15 min. ) |
(18) |
16:35-16:55 |
Interface controlled silicide Schottky S/D for future 3D devices |
Yuta Tamura, Ryo Yoshihara, Kuniyuki Kakushima, Parhat Ahmet, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Kazuo Tsutsui, Kenji Natori, Takeo Hattori, Hiroshi Iwai (Tokyo Tech) |
(19) |
16:55-17:15 |
Formation of Extremely Thin Ni-InGaAs Alloyed Contact for Scaled InGaAs MOSFETs and its Thermal Stability |
Toshifumi Irisawa, Minoru Oda, Tsutomu Tezuka (AIST) |
(20) |
17:15-17:40 |
Alleviation of Fermi level pinning for TiN/Ge contact and its application to MOS device |
Keisuke Yamamoto, Masatoshi Iyota, Dong Wang, Hiroshi Nakashima (Kyushu Univ.) |
(21) |
17:40-18:00 |
Control of junction property at the diamond/metal interface
-- The present results and problems of p-type and n-type diamond -- |
Tsubasa Matsumoto (Tsukuba Univ.), Hiromitsu Kato, Masahiko Ogura, Daisuke Takeuchi, Toshiharu Makino, Hideyo Okushi, Satoshi Yamasaki (AIST) |
Announcement for Speakers |
General Talk | Each speech will have 15 minutes for presentation and 5 minutes for discussion. |
Encouragement Talk | Each speech will have 15 minutes for presentation and 5 minutes for discussion. |
Invited Talk | Each speech will have 20 minutes for presentation and 5 minutes for discussion. |
Contact Address and Latest Schedule Information |
SDM |
Technical Committee on Silicon Device and Materials (SDM) [Latest Schedule]
|
Contact Address |
Yukinori Ono(NTT)
Tel 046-240-2641 Fax 046-240-4317
E-: o |
Last modified: 2012-04-13 15:04:18
|