Fri, Dec 4 AM
09:20 - 17:30 |
| (1) |
09:20-09:40 |
Improvement of the optical property of ZnS-based inorganic EL phosphor by Microwave Sintering |
Yusuke Kobayashi (NAIST), Nobuyoshi Taguchi (Image Tech Inc.), Masami Susaki (Osaka Pref. College of Technology), Masahiro Horita (NAIST), Yukiharu Uraoka (NAIST/CREST) |
| (2) |
09:40-10:00 |
Reduction of interface state density in 4H-SiC MOS interface by incorporation of phosphorus atoms |
Dai Okamoto, Hiroshi Yano, Kenji Hirata, Tomoaki Hatayama, Takashi Fuyuki (NAIST) |
| (3) |
10:00-10:20 |
Changed of Acceptor Density in Al-doped 6H-SiC Epilayer by Electron Irradiattion |
Takunori Nojiri, Hideki Yanagisawa, Yosiko Myojin, Hideharu Matsuura (Osaka Electro-Comm Univ), Takeshi Ohshima (JAEA) |
| (4) |
10:20-10:40 |
Research on Radiation Resistance in SiC Epilayer by 200 keV Electron Irradiation.
-- dopant-density dependence -- |
Hideki Yanagisawa, Kozo Nishino, Takunori Nojiri, Hideharu Matsuura (Osaka Electro-Comm Univ), Takeshi Ohshima (JAEA) |
| (5) |
10:40-11:00 |
Reduction in Acceptor Density due to Displacement of Carbon atom in Al-doped 4H-SiC by Electron Irradiation |
Kozo Nishino, Hideki Yanagisawa, Takunori Nojiri, Hideharu Matsuura (Osaka Electro-Comm Univ), Takeshi Ohshima (JAEA) |
| (6) |
11:00-11:20 |
Electrochemical measurement by potenitiostat using thin-film transistor |
Kosuke Bundo, Yosiki Imuro, Koushi Setsu (Ryukoku Univ), Yuki Sagawa (NAIST), Mutsumi Kimura (Ryukoku Univ) |
| (7) |
11:20-11:40 |
Characteristics of hot hole injection, trapping, and detrapping in gate oxide of poly-Si TFTs |
Yoshinari Kamakura (Osaka Univ.), Takashi Himukashi (Osaka Univ./Kansai Univ.), Hiroshi Tsuji, Kenji Taniguchi (Osaka Univ.) |
| (8) |
11:40-12:00 |
Si substrate processing by ethanol cluster ion beam technique |
Hiroshi Mukai, Hiromichi Ryuto, Mitsuaki Takeuchi, Gikan H. Takaoka (Kyoto Univ.) |
| |
12:00-13:00 |
Break ( 60 min. ) |
| (9) |
13:00-13:30 |
[Invited Talk]
Temperature dependence of threshold voltage of High-k/Metal Gate MOSFETs |
Yukio Nishida (Renesas/Hiroshima Univ.), Katsumi Eikyu, Akihiro Shimizu, Tomohiro Yamashita, Hidekazu Oda, Yasuo Inoue (Renesas), Kentaro Shibahara (Hiroshima Univ./Renesas) |
| (10) |
13:30-13:50 |
Simplification of Structures of Si X-ray Detectors (Silicon Drift Detector)
-- Evaluation by simulation -- |
Seigo Kitanoya, Takayuki Miyake, Yukihiro Taniguchi, Hideharu Matsuura (Osaka Electro-Comm Univ.) |
| (11) |
13:50-14:10 |
Investigation of LTPS TFT flash memory using crystallized 3-dimentonal substrate by green laser irradiation |
Kazunori Ichikawa, Masahiro Matsue, Hiroshi Akamatsu (Kobe City Coll. of Tech), Yukiharu Uraoka (NAIST) |
| (12) |
14:10-14:30 |
Application of thin-film devices to artificial retina |
Yuta Miura, Takeshi Ogura, Shiro Ohno (Ryukoku Univ.), Tomohisa Hachida, Yoshitaka Nishizaki, Takehiko Yamashita (NAIST), Takehiro Shima, Mutsumi Kimura (Ryukoku Univ.) |
| (13) |
14:30-14:50 |
Gettering in Large-Grained Thin Polycrystalline Silicon Films on Glass Substrate |
Akito Hara, Tsutomu Sato (Tohoku Gakuin Univ.) |
| (14) |
14:50-15:10 |
Neural Network of Device Level using Poly-Si TFT |
Daiki Mishima, Jin Taniguchi, Tomohiro Kasakawa (Ryukoku Univ.), Hiroki Tabata, Ryo Onodera (NAIST), Hiroki Kojima, Mutsumi Kimura (Ryukoku Univ.) |
| |
15:10-15:30 |
Break ( 20 min. ) |
| (15) |
15:30-15:50 |
Crystallization of a-Si Film via Quasi-Nuclei Formed by Laser Plasma Soft X-Ray Irradiation |
Sinya Isoda, Naoto Matsuo, Sho Amano, Akira Heya, Shuji Miyamoto, Takayasu Mochizuki (Univ. of Hyogo.) |
| (16) |
15:50-16:10 |
Formation of High Quality SiO2 and SiO2/Si Interface using Thermal Plasma Jet Induced Millisecond Annealing and Post-Metallization Annealing |
Yasuo Hiroshige, Seiichiro Higashi, Yusuke Miyazaki, Kazuya Matsumoto, Seiichi Miyazaki (Hiroshima Univ.) |
| (17) |
16:10-16:30 |
Stability Improvement of Printer Ink |
Tomohiro Oba, Sinya Maeta, Masaki Yamaguchi (Shibaura Ins. of Tech.) |
| (18) |
16:30-16:50 |
Chemical composition dependence of electrical characteristics of NiO thin films for ReRAM |
Tatsuya Iwata, Yusuke Nishi, Tsunenobu Kimoto (Kyoto Univ.) |
| (19) |
16:50-17:10 |
Mechanism elucidation of ReRAM by application of new analytical method |
Tatsuya Makino, Kentaro Kinoshita, Kazufumi Doashi, Takatoshi Yoda, Satoru Kishida (Tottori Univ.) |
| (20) |
17:10-17:30 |
Characterization of defects in NiO thin films for ReRAM |
Yusuke Nishi, Tatsuya Iwata, Tsunenobu Kimoto (Kyoto Univ.) |
: Hi
An
ny