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Technical Committee on Silicon Device and Materials (SDM)
Chair: Shigeyoshi Watanabe (Shonan Inst. of Tech.) Vice Chair: Toshihiro Sugii (Fujitsu Microelectronics)
Secretary: Hisahiro Anzai (Sony), Tetsuro Endo (Tohoku Univ.)
Assistant: Katsunori Onishi (Kyushu Inst. of Tech.), Yukinori Ono (NTT)

DATE:
Fri, Dec 4, 2009 09:20 - 17:30

PLACE:
School of Material Science(8916-5, Takayama, Ikoma, Nara 630-0192, Japan. Prof. Yukiharu Uraoka. 0743-72-6060)

TOPICS:
Fabrication, Evaluation for Si Related Materials,

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Fri, Dec 4 AM (09:20 - 17:30)
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(1) 09:20 - 09:40
Improvement of the optical property of ZnS-based inorganic EL phosphor by Microwave Sintering
Yusuke Kobayashi (NAIST), Nobuyoshi Taguchi (Image Tech Inc.), Masami Susaki (Osaka Pref. College of Technology), Masahiro Horita (NAIST), Yukiharu Uraoka (NAIST/CREST)

(2) 09:40 - 10:00
Reduction of interface state density in 4H-SiC MOS interface by incorporation of phosphorus atoms
Dai Okamoto, Hiroshi Yano, Kenji Hirata, Tomoaki Hatayama, Takashi Fuyuki (NAIST)

(3) 10:00 - 10:20
Changed of Acceptor Density in Al-doped 6H-SiC Epilayer by Electron Irradiattion
Takunori Nojiri, Hideki Yanagisawa, Yosiko Myojin, Hideharu Matsuura (Osaka Electro-Comm Univ), Takeshi Ohshima (JAEA)

(4) 10:20 - 10:40
Research on Radiation Resistance in SiC Epilayer by 200 keV Electron Irradiation.
-- dopant-density dependence --
Hideki Yanagisawa, Kozo Nishino, Takunori Nojiri, Hideharu Matsuura (Osaka Electro-Comm Univ), Takeshi Ohshima (JAEA)

(5) 10:40 - 11:00
Reduction in Acceptor Density due to Displacement of Carbon atom in Al-doped 4H-SiC by Electron Irradiation
Kozo Nishino, Hideki Yanagisawa, Takunori Nojiri, Hideharu Matsuura (Osaka Electro-Comm Univ), Takeshi Ohshima (JAEA)

(6) 11:00 - 11:20
Electrochemical measurement by potenitiostat using thin-film transistor
Kosuke Bundo, Yosiki Imuro, Koushi Setsu (Ryukoku Univ), Yuki Sagawa (NAIST), Mutsumi Kimura (Ryukoku Univ)

(7) 11:20 - 11:40
Characteristics of hot hole injection, trapping, and detrapping in gate oxide of poly-Si TFTs
Yoshinari Kamakura (Osaka Univ.), Takashi Himukashi (Osaka Univ./Kansai Univ.), Hiroshi Tsuji, Kenji Taniguchi (Osaka Univ.)

(8) 11:40 - 12:00
Si substrate processing by ethanol cluster ion beam technique
Hiroshi Mukai, Hiromichi Ryuto, Mitsuaki Takeuchi, Gikan H. Takaoka (Kyoto Univ.)

----- Break ( 60 min. ) -----

(9) 13:00 - 13:30
[Invited Talk]
Temperature dependence of threshold voltage of High-k/Metal Gate MOSFETs
Yukio Nishida (Renesas/Hiroshima Univ.), Katsumi Eikyu, Akihiro Shimizu, Tomohiro Yamashita, Hidekazu Oda, Yasuo Inoue (Renesas), Kentaro Shibahara (Hiroshima Univ./Renesas)

(10) 13:30 - 13:50
Simplification of Structures of Si X-ray Detectors (Silicon Drift Detector)
-- Evaluation by simulation --
Seigo Kitanoya, Takayuki Miyake, Yukihiro Taniguchi, Hideharu Matsuura (Osaka Electro-Comm Univ.)

(11) 13:50 - 14:10
Investigation of LTPS TFT flash memory using crystallized 3-dimentonal substrate by green laser irradiation
Kazunori Ichikawa, Masahiro Matsue, Hiroshi Akamatsu (Kobe City Coll. of Tech), Yukiharu Uraoka (NAIST)

(12) 14:10 - 14:30
Application of thin-film devices to artificial retina
Yuta Miura, Takeshi Ogura, Shiro Ohno (Ryukoku Univ.), Tomohisa Hachida, Yoshitaka Nishizaki, Takehiko Yamashita (NAIST), Takehiro Shima, Mutsumi Kimura (Ryukoku Univ.)

(13) 14:30 - 14:50
Gettering in Large-Grained Thin Polycrystalline Silicon Films on Glass Substrate
Akito Hara, Tsutomu Sato (Tohoku Gakuin Univ.)

(14) 14:50 - 15:10
Neural Network of Device Level using Poly-Si TFT
Daiki Mishima, Jin Taniguchi, Tomohiro Kasakawa (Ryukoku Univ.), Hiroki Tabata, Ryo Onodera (NAIST), Hiroki Kojima, Mutsumi Kimura (Ryukoku Univ.)

----- Break ( 20 min. ) -----

(15) 15:30 - 15:50
Crystallization of a-Si Film via Quasi-Nuclei Formed by Laser Plasma Soft X-Ray Irradiation
Sinya Isoda, Naoto Matsuo, Sho Amano, Akira Heya, Shuji Miyamoto, Takayasu Mochizuki (Univ. of Hyogo.)

(16) 15:50 - 16:10
Formation of High Quality SiO2 and SiO2/Si Interface using Thermal Plasma Jet Induced Millisecond Annealing and Post-Metallization Annealing
Yasuo Hiroshige, Seiichiro Higashi, Yusuke Miyazaki, Kazuya Matsumoto, Seiichi Miyazaki (Hiroshima Univ.)

(17) 16:10 - 16:30
Stability Improvement of Printer Ink
Tomohiro Oba, Sinya Maeta, Masaki Yamaguchi (Shibaura Ins. of Tech.)

(18) 16:30 - 16:50
Chemical composition dependence of electrical characteristics of NiO thin films for ReRAM
Tatsuya Iwata, Yusuke Nishi, Tsunenobu Kimoto (Kyoto Univ.)

(19) 16:50 - 17:10
Mechanism elucidation of ReRAM by application of new analytical method
Tatsuya Makino, Kentaro Kinoshita, Kazufumi Doashi, Takatoshi Yoda, Satoru Kishida (Tottori Univ.)

(20) 17:10 - 17:30
Characterization of defects in NiO thin films for ReRAM
Yusuke Nishi, Tatsuya Iwata, Tsunenobu Kimoto (Kyoto Univ.)

# Information for speakers
General Talk will have 15 minutes for presentation and 5 minutes for discussion.
Invited Talk will have 25 minutes for presentation and 5 minutes for discussion.

=== Technical Committee on Silicon Device and Materials (SDM) ===
# FUTURE SCHEDULE:

Fri, Feb 5, 2010: Kikai-Shinko-Kaikan Bldg. [Sat, Dec 5]
Mon, Feb 22, 2010 - Tue, Feb 23, 2010: Okinawaken-Seinen-Kaikan [Tue, Dec 8], Topics: Functional Nano Device and Related Technology

# SECRETARY:
Hisahiro Ansai(Sony)
Tel 046-201-3297 Fax046-202-6572
E-mail: Hi