ken-system: Advance Program

IEICE Technical Committee Submission System
Advance Program

Online Proceedings
[Sign in]
Tech. Rep. Archives

===============================================
Technical Committee on Electron Device (ED)
Chair: Tamotsu Hashidume (Hokkaido Univ.) Vice Chair: Tetsu Kachi (Toyota Central R&D Labs.)
Secretary: Koichi Murata (NTT), Naoki Hara (Fujitsu Labs.)
Assistant: Kunio Tsuda (Toshiba), Michihiko Suhara (Tokyo Metropolitan Univ.)

DATE:
Thu, Jun 11, 2009 13:00 - 17:15
Fri, Jun 12, 2009 09:30 - 12:15

PLACE:
Tokyo Institute of Technology(http://www.titech.ac.jp/access-and-campusmap/j/o-okayamaO-j.html. Tokyo Institute of Technology Prof. Yasuyuki Miyamoto. 03-5734-2572)

TOPICS:

----------------------------------------
Thu, Jun 11 PM (13:00 - 17:15)
----------------------------------------

(1) 13:00 - 13:25
Removal of high dose Ion-Implanted photoresists with SPMless cleaning
Toshiya Sato, Tamotsu Suzuki, Akihiko Tsukahara (FML Ltd), Kyota Morihira (Aqua Science Corp)

(2) 13:25 - 13:50
Evaluation of Cu-Inhibitor Residue for Post Cu-CMP Cleaning
Atsushi Ito, Ken Harada, Yasuhiro Kawase, Fumikazu Mizutani (Mitsubishi Chem.), Makoto Hara, Hidemitsu Aoki, Chiharu Kimura, Takashi Sugino (Osaka Univ.)

(3) 13:50 - 14:15
Post CMP Cleaning by Megasonic Using Waveguide Tube Type Equipment
Kazunari Suzuki (Kaijo Corp./Shibaura Inst. of Tech.), Ki Han, Shouichi Okano, Junichiro Soejima (Kaijo Corp.), Yoshikazu Koike (Shibaura Inst. of Tech.)

----- Break ( 15 min. ) -----

(4) 14:30 - 14:55
Development of bevel brush scrubbing process
Yoshiya Hagimoto, Hayato Iwamoto (Sony Corp.)

(5) 14:55 - 15:20
Dependence of Characteristics of Methyl-BCN Film on RF Bias
Takuro Masuzumi, Makoto Hara, Hidemitsu Aoki, Zhiming Lu, Chiharu Kimura, Takashi Sugino (Osaka Univ.)

----- Break ( 15 min. ) -----

(6) 15:35 - 16:00
Electrical characterization of plasma-induced defects in GaN
Seiji Nakamura, Koichi Hoshino, Shunsuke Ochiai, Michihiko Suhara, Tsugunori Okumura (Tokyo Metro Univ.)

(7) 16:00 - 16:25
Characterization of ALD-Al2O3/AlGaN/GaN interfaces
Chihoko Mizue, Yujin Hori (Hokkaido Univ.), Marcin Miczek (Silesian Univ. of Tech.), Tamotsu Hashizume (Hokkaido Univ.)

(8) 16:25 - 16:50
Improvement in Device Performance in MIS AlGaN/GaN HFETs by Designing Insulator/AlGaN/GaN Structures
Narihiko Maeda, Masanobu Hiroki, Takatomo Enoki (NTT), Takashi Kobayashi (NTT AT)

(9) 16:50 - 17:15
A study on low damage dry etching for AlGaN/GaN-HEMT
Masahiko Kuraguchi, Miki Yumoto, Yoshiharu Takada, Kunio Tsuda (Toshiba Corp.)

----------------------------------------
Fri, Jun 12 AM (09:30 - 12:15)
----------------------------------------

(10) 09:30 - 09:55
Theoretical Study of Band Structures and Electron Transport properties in Strained InAs and InSb
Hiroyuki Nishino, Ichita Kawahira, Shinsuke Hara, Hiroki I. Fujishiro (Tokyo Univ. of Sci.)

(11) 09:55 - 10:20
Anisotropy of two-dimensional electron mobilities in InGaAs/InP
Masashi Akabori (JAIST/Research Centre Juelich), Thanh Quang Trinh, Masahiro Kudo (JAIST), Thomas Schaepers, Hilde Hardtdegen (Research Centre Juelich), Toshi-kazu Suzuki (JAIST)

(12) 10:20 - 10:45
In-situ etching by CBr4 in InP heterojunction bipolar transistors with buried SiO2 wire
Naoaki Takebe, Hiroaki Yamashita, Shinnosuke Takahashi, Hisashi Saito, Takashi Kobayashi, Yasuyuki Miyamoto, Kazuhito Furuya (Tokyo Inst. of Tech.)

----- Break ( 15 min. ) -----

(13) 11:00 - 11:25
Electric characteristics of recessed gate MIS-AlGaN/GaN-HEMT with a thermal CVD SiN gate insulator film.
Toshiharu Marui, Shinichi Hoshi, Fumihiko Toda, Yoshiaki Morino, Masanori Itoh, Hideyuki Okita, Isao Tamai, Shohei Seki (Oki Electric Industry Co.,Ltd.)

(14) 11:25 - 11:50
Effect of Epitaxial Layer Design on Drain Leakage Current for Millimeter-Wave GaN-HEMT
Atsushi Yamada, Kozo Makiyama, Toshihiro Ohki, Masahito Kanamura, Kazukiyo Joshin, Kenji Imanishi (Fujitsu and Fujitsu Labs.), Naoki Hara (Fujitsu Labs.), Toshihide Kikkawa (Fujitsu and Fujitsu Labs.)

(15) 11:50 - 12:15
Influence of SiC Substrate Misorientation on AlGaN/GaN HEMTs Performance
Keiichi Matsushita, Hiroyuki Sakurai, Jeoungchill Shim, Kazutaka Takagi, Hisao Kawasaki, Yoshiharu Takada, Kunio Tsuda (Toshiba Corp.)

=== Technical Committee on Electron Device (ED) ===
# FUTURE SCHEDULE:

Wed, Jun 24, 2009 - Fri, Jun 26, 2009: Haeundae Grand Hotel, Busan, Korea [Fri, Apr 10], Topics: 2009 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
Thu, Jul 30, 2009 - Fri, Jul 31, 2009: Osaka Univ. Icho-Kaikan [Sat, May 23]

# SECRETARY:
Koichi Murata（NTT)
TEL：046-240-2871、FAX：046-270-2872
E-mail：