Thu, Jun 11 PM
13:00 - 17:15 |
| (1) |
13:00-13:25 |
Removal of high dose Ion-Implanted photoresists with SPMless cleaning |
Toshiya Sato, Tamotsu Suzuki, Akihiko Tsukahara (FML Ltd), Kyota Morihira (Aqua Science Corp) |
| (2) |
13:25-13:50 |
Evaluation of Cu-Inhibitor Residue for Post Cu-CMP Cleaning |
Atsushi Ito, Ken Harada, Yasuhiro Kawase, Fumikazu Mizutani (Mitsubishi Chem.), Makoto Hara, Hidemitsu Aoki, Chiharu Kimura, Takashi Sugino (Osaka Univ.) |
| (3) |
13:50-14:15 |
Post CMP Cleaning by Megasonic Using Waveguide Tube Type Equipment |
Kazunari Suzuki (Kaijo Corp./Shibaura Inst. of Tech.), Ki Han, Shouichi Okano, Junichiro Soejima (Kaijo Corp.), Yoshikazu Koike (Shibaura Inst. of Tech.) |
| |
14:15-14:30 |
Break ( 15 min. ) |
| (4) |
14:30-14:55 |
Development of bevel brush scrubbing process |
Yoshiya Hagimoto, Hayato Iwamoto (Sony Corp.) |
| (5) |
14:55-15:20 |
Dependence of Characteristics of Methyl-BCN Film on RF Bias |
Takuro Masuzumi, Makoto Hara, Hidemitsu Aoki, Zhiming Lu, Chiharu Kimura, Takashi Sugino (Osaka Univ.) |
| |
15:20-15:35 |
Break ( 15 min. ) |
| (6) |
15:35-16:00 |
Electrical characterization of plasma-induced defects in GaN |
Seiji Nakamura, Koichi Hoshino, Shunsuke Ochiai, Michihiko Suhara, Tsugunori Okumura (Tokyo Metro Univ.) |
| (7) |
16:00-16:25 |
Characterization of ALD-Al2O3/AlGaN/GaN interfaces |
Chihoko Mizue, Yujin Hori (Hokkaido Univ.), Marcin Miczek (Silesian Univ. of Tech.), Tamotsu Hashizume (Hokkaido Univ.) |
| (8) |
16:25-16:50 |
Improvement in Device Performance in MIS AlGaN/GaN HFETs by Designing Insulator/AlGaN/GaN Structures |
Narihiko Maeda, Masanobu Hiroki, Takatomo Enoki (NTT), Takashi Kobayashi (NTT AT) |
| (9) |
16:50-17:15 |
A study on low damage dry etching for AlGaN/GaN-HEMT |
Masahiko Kuraguchi, Miki Yumoto, Yoshiharu Takada, Kunio Tsuda (Toshiba Corp.) |
Fri, Jun 12 AM
09:30 - 12:15 |
| (10) |
09:30-09:55 |
Theoretical Study of Band Structures and Electron Transport properties in Strained InAs and InSb |
Hiroyuki Nishino, Ichita Kawahira, Shinsuke Hara, Hiroki I. Fujishiro (Tokyo Univ. of Sci.) |
| (11) |
09:55-10:20 |
Anisotropy of two-dimensional electron mobilities in InGaAs/InP |
Masashi Akabori (JAIST/Research Centre Juelich), Thanh Quang Trinh, Masahiro Kudo (JAIST), Thomas Schaepers, Hilde Hardtdegen (Research Centre Juelich), Toshi-kazu Suzuki (JAIST) |
| (12) |
10:20-10:45 |
In-situ etching by CBr4 in InP heterojunction bipolar transistors with buried SiO2 wire |
Naoaki Takebe, Hiroaki Yamashita, Shinnosuke Takahashi, Hisashi Saito, Takashi Kobayashi, Yasuyuki Miyamoto, Kazuhito Furuya (Tokyo Inst. of Tech.) |
| |
10:45-11:00 |
Break ( 15 min. ) |
| (13) |
11:00-11:25 |
Electric characteristics of recessed gate MIS-AlGaN/GaN-HEMT with a thermal CVD SiN gate insulator film. |
Toshiharu Marui, Shinichi Hoshi, Fumihiko Toda, Yoshiaki Morino, Masanori Itoh, Hideyuki Okita, Isao Tamai, Shohei Seki (Oki Electric Industry Co.,Ltd.) |
| (14) |
11:25-11:50 |
Effect of Epitaxial Layer Design on Drain Leakage Current for Millimeter-Wave GaN-HEMT |
Atsushi Yamada, Kozo Makiyama, Toshihiro Ohki, Masahito Kanamura, Kazukiyo Joshin, Kenji Imanishi (Fujitsu and Fujitsu Labs.), Naoki Hara (Fujitsu Labs.), Toshihide Kikkawa (Fujitsu and Fujitsu Labs.) |
| (15) |
11:50-12:15 |
Influence of SiC Substrate Misorientation on AlGaN/GaN HEMTs Performance |
Keiichi Matsushita, Hiroyuki Sakurai, Jeoungchill Shim, Kazutaka Takagi, Hisao Kawasaki, Yoshiharu Takada, Kunio Tsuda (Toshiba Corp.) |
： 
aecl
o
o
ba
