Thu, Dec 13 AM
09:30 - 17:00 |
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09:30-09:35 |
Opening Address ( 5 min. ) |
| (1) |
09:35-10:00 |
Gain characterization of 19-stacked InGaAs/GaAs quantum dot laser diode fabricated by ultrahigh rate MBE growth technique |
Fumihiko Tanoue, Hiroharu Sugawara (Tokyo Metropolitan Univ.), Kouichi Akahane, Naokatsu Yamamoto (NICT) |
| (2) |
10:00-10:25 |
Surface Emitting Laser using Polymer Optical Circuit |
Takeru Amano, Fumio Sasaki, Shigeya Ukita, Motohiro Suzuki, Masahiro Aoyagi, Kazuhiro Komori (AIST) |
| (3) |
10:25-10:50 |
Low threshold operation of GaInAsP/InP lateral current injection type membrane laser |
Takahiko Shindo, Mitsuaki Futami, Kyohei Doi, Tomohiro Amemiya, Nobuhiko Nishiyama, Shigehisa Arai (Tokyo Tech) |
| |
10:50-11:00 |
Break ( 10 min. ) |
| (4) |
11:00-11:25 |
Ultra-high-speed direct modulation of AlGaInAs semi-insulating buried-heterostructure distributed-reflector lasers |
Takasi Simoyama, Manabu Matsuda, Shigekazu Okumura, Ayahito Uetake, Mitsuru Ekawa, Tsuyoshi Yamamoto (Fujitsu Labs.) |
| (5) |
11:25-11:50 |
1550nm/1310nm dual wavelength high power LD |
Shintaro Morimoto, Hiroshi Mori, Atsushi Yamada, Yasuaki Nagashima, Motoaki Fujita, Shinichi Onuki, Hiroaki Yoshidaya, Kazuaki Mise (Anritsu Devices) |
| (6) |
11:50-12:15 |
Asymmetric Ridge-type Semiconductor Laser with a Selectively Formed Single-Sided Antiguiding Cladding Layer |
Masahiro Higaki, Takahiro Numai (Ritsumeikan Univ.) |
| |
12:15-13:15 |
Lunch Break ( 60 min. ) |
| |
13:15-13:25 |
Ceremony of LQE Award ( 10 min. ) |
| (7) |
13:25-13:50 |
[Encouragement Talk]
Photonic-crystal lasers for creation of distinctive focus |
Kyoko Kitamura, Masaya Nishimoto, Kyosuke Sakai, Susumu Noda (Kyoto Univ.) |
| (8) |
13:50-14:15 |
[Encouragement Talk]
Advances in Quantum Dot Lasers on Silicon Substrates by Wafer Bonding |
Katsuaki Tanabe, Yasuhiko Arakawa (Univ. Tokyo) |
| (9) |
14:15-14:40 |
III-V/Si Direct Bonding by N2 Plasma Surface Activation and Its Application to Hybrid Laser |
Yusuke Hayashi, Ryo Osabe, Keita Fukuda, JoonHyun Kang, Yuki Atsumi, Nobuhiko Nishiyama, Shigehisa Arai (Tokyo Inst. Tech.) |
| (10) |
14:40-15:05 |
Scattering phenomenon via Non-Lasing band in 2D Photonic Crystal Laser |
Kazuyoshi Hirose, Yoshitaka Kurosaka, Akiyoshi Watanabe, Takahiro Sugiyama (HPK), Yong Liang, Susumu Noda (Kyoto Univ.) |
| |
15:05-15:15 |
Break ( 10 min. ) |
| (11) |
15:15-15:40 |
Hollow waveguide DBR lasers with 2D optical confinement structure toward athermal and narrow linewidth operation |
Hideaki Yamakawa, Tomohiro Akutsu, Takahiro Sakaguchi, Fumio Koyama (TITECH) |
| (12) |
15:40-16:05 |
Full-band Injection-Locking Properties of a Monolitically Integrated Tunable Laser with Single Stripe Structure |
Aaron Albores-Mejia, Haruhiko Kuwatsuka (AIST), Toshimitsu Kaneko, Katsumi Uesaka, Hajime Shoji (SEI), Hiroshi Ishikawa (AIST) |
| (13) |
16:05-16:30 |
1550nm AlGaInAs/InP Widely Tunable BH Laser based on Arrayed DFB |
Norihiro Iwai, Masaki Wakaba, Masako Kobayakawa, Kazuaki Kiyota, Tatsuro Kurobe, Go Kobayashi, Tatsuya Kimoto, Toshikazu Mukaihara, Noriyuki Yokouchi, Akihiko Kasukawa (Furukawa Electric) |
| (14) |
16:30-16:55 |
10.7Gbps-80km Fiber Transmission of Full C-band Tunable TOSA with LGLC Tunable Laser |
Kazuhiko Naoe, Atsushi Nakamura, Noriko Sasada, Akira Nakanishi, Yasushi Sakuma, Katsuya Motoda, Takeshi Yamashita, Tomohiko Yahagi (Oclaro), Takanori Suzuki, Hideo Arimoto, Shigehisa Tanaka (Hitachi CRL) |
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16:55-17:00 |
Closing Address ( 5 min. ) |
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