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=============================================== Technical Committee on Silicon Device and Materials (SDM) Chair: Hiroshige Hirano (TowerPartners Semiconductor) Vice Chair: Shunichiro Ohmi (Tokyo Inst. of Tech.) Secretary: Takahiro Mori (AIST), Nobuaki Kobayashi (Nihon Univ.) Assistant: Taiji Noda (Panasonic), Tomoyuki Suwa (Tohoku Univ.) DATE: Thu, Oct 21, 2021 10:45 - 16:50 PLACE: TOPICS: Process Science and New Process Technology ---------------------------------------- Thu, Oct 21 AM (10:00 - 16:50) ---------------------------------------- ----- ( 40 min. ) ----- ----- Break ( 5 min. ) ----- (1) 10:45 - 11:35 [Invited Talk] Influence of Fluorine on Reliabilities of SiO2 and SixNy Films Yuichiro Mitani (Tokyo City Univ.) (2) 11:35 - 12:00 Characterization of Gallium Oxide Thin Film Deposited by Sputtering Method Fuminobu Imaizumi (NIT, Oyama college) ----- Lunch Break ( 60 min. ) ----- (3) 13:00 - 13:25 A study on Ar/N2-plasma sputtering gas pressure dependence on the LaBxNy insulator formation for non-volatile memory applications Eun-Ki Hong, Shun-ichiro Ohmi (Tokyo Tech.) (4) 13:25 - 13:50 A study on the effect of inter layers on ferroelectric nondoped HfO2 formation Masakazu Tanuma, Joong-Won Shin, Shun-ichiro Ohmi (Tokyo Tech.) (5) 13:50 - 14:15 A study on Hf-based MONOS nonvolatile memory with HfO2 and HfON tunneling layers for multi-bit/cell operation Pyo Jooyoung, Ihara Akio, Ohmi Shun-ichiro (Tokyo Tech.) ----- Break ( 15 min. ) ----- (6) 14:30 - 15:20 [Invited Talk] Device and Integration Technologies Realizing Silicon Quantum Computers Takahiro Mori (AIST) (7) 15:20 - 15:45 Highly sensitive TMR sensor and its application to bio-magnetic field measurement Mikihiko Oogane (Tohoku Univ.) ----- Break ( 15 min. ) ----- (8) 16:00 - 16:25 Current Measurement Platform Applied for Statistical Measurement of Discharge Current due to Traps in SiN Dielectrics Koga Saito, Hayato Suzuki, Hyeonwoo Park, Rihito Kuroda (Tohoku Univ.), Akinobu Teramoto (Hiroshima Univ.), Tomoyuki Suwa, Shigetoshi Sugawa (Tohoku Univ.) (9) 16:25 - 16:50 Statistical analysis of RTN behavior on transistor structure, operating region, and carrier transport direction Ryo Akimoto, Rihito Kuroda, Takezo Mawaki, Shigotoshi Sugawa (Tohoku Univ.) ----- ( 40 min. ) ----- # Information for speakers General Talk will have 20 minutes for presentation and 5 minutes for discussion. === Technical Committee on Silicon Device and Materials (SDM) === # FUTURE SCHEDULE: Thu, Nov 11, 2021 - Fri, Nov 12, 2021: Online [Mon, Sep 6], Topics: Process, Device, Circuit simulation, etc. Mon, Jan 31, 2022: Online [unfixed] # SECRETARY: SDM Secretary: MORI Takahiro(National Institute of AIST) Tel +81-29-849-1149   -    aist Last modified: 2021-10-12 11:12:17 |
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