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Technical Committee on Silicon Device and Materials (SDM) [schedule] [select]
Chair Hiroshige Hirano (TowerPartners Semiconductor)
Vice Chair Shunichiro Ohmi (Tokyo Inst. of Tech.)
Secretary Takahiro Mori (AIST), Nobuaki Kobayashi (Nihon Univ.)
Assistant Taiji Noda (Panasonic), Tomoyuki Suwa (Tohoku Univ.)

Conference Date Thu, Oct 21, 2021 10:45 - 16:50
Topics Process Science and New Process Technology 
Conference Place  
Registration Fee This workshop will be held as the IEICE workshop in fully electronic publishing. Registration fee will be necessary except the speakers and participants other than the participants to workshop(s) in non-electronic publishing. See the registration fee page. We request the registration fee or presentation fee to participants who will attend the workshop(s) on SDM.

Thu, Oct 21 AM 
10:00 - 16:50
  10:00-10:40 ( 40 min. )
  10:40-10:45 Break ( 5 min. )
(1) 10:45-11:35 [Invited Talk]
Influence of Fluorine on Reliabilities of SiO2 and SixNy Films 		Yuichiro Mitani (Tokyo City Univ.)
(2) 11:35-12:00 Characterization of Gallium Oxide Thin Film Deposited by Sputtering Method Fuminobu Imaizumi (NIT, Oyama college)
  12:00-13:00 Lunch Break ( 60 min. )
(3) 13:00-13:25 A study on Ar/N2-plasma sputtering gas pressure dependence on the LaBxNy insulator formation for non-volatile memory applications Eun-Ki Hong, Shun-ichiro Ohmi (Tokyo Tech.)
(4) 13:25-13:50 A study on the effect of inter layers on ferroelectric nondoped HfO2 formation Masakazu Tanuma, Joong-Won Shin, Shun-ichiro Ohmi (Tokyo Tech.)
(5) 13:50-14:15 A study on Hf-based MONOS nonvolatile memory with HfO2 and HfON tunneling layers for multi-bit/cell operation Pyo Jooyoung, Ihara Akio, Ohmi Shun-ichiro (Tokyo Tech.)
  14:15-14:30 Break ( 15 min. )
(6) 14:30-15:20 [Invited Talk]
Device and Integration Technologies Realizing Silicon Quantum Computers 		Takahiro Mori (AIST)
(7) 15:20-15:45 Highly sensitive TMR sensor and its application to bio-magnetic field measurement Mikihiko Oogane (Tohoku Univ.)
  15:45-16:00 Break ( 15 min. )
(8) 16:00-16:25 Current Measurement Platform Applied for Statistical Measurement of Discharge Current due to Traps in SiN Dielectrics Koga Saito, Hayato Suzuki, Hyeonwoo Park, Rihito Kuroda (Tohoku Univ.), Akinobu Teramoto (Hiroshima Univ.), Tomoyuki Suwa, Shigetoshi Sugawa (Tohoku Univ.)
(9) 16:25-16:50 Statistical analysis of RTN behavior on transistor structure, operating region, and carrier transport direction Ryo Akimoto, Rihito Kuroda, Takezo Mawaki, Shigotoshi Sugawa (Tohoku Univ.)
  16:50-17:30 ( 40 min. )

Announcement for Speakers
General TalkEach speech will have 20 minutes for presentation and 5 minutes for discussion.

Contact Address and Latest Schedule Information
SDM Technical Committee on Silicon Device and Materials (SDM)   [Latest Schedule]
Contact Address SDM Secretary: MORI Takahiro(National Institute of AIST)
Tel +81-29-849-1149
E-Mail -aist 


Last modified: 2021-10-12 11:12:17


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