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Technical Committee on Electron Device (ED)
Chair: Naoki Hara (Fujitsu Labs.) Vice Chair: Koichi Maezawa (Univ. of Toyama)
Secretary: Tetsuzo Ueda (Panasonic), Seiya Kasai (Hokkaido Univ.)
Assistant: Koji Matsunaga (NEC), Toshikazu Suzuki (JAIST)

DATE:
Tue, Oct 22, 2013 13:30 - 17:20
Wed, Oct 23, 2013 09:00 - 12:05

PLACE:
En-rei-sou, Hokkaido University(N11, W8, Sapporo 060-0811, Japan. 15-20 min by walk from JR Sapporo Station. http://www.hokudai.ac.jp/introduction/campus/enreiso/. Prof. Seiya Kasai. +81-11-706-6509)

TOPICS:
Vacuum tube and vacuum nanoelectronics

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Tue, Oct 22 PM (13:30 - 17:20)
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(1) 13:30 - 14:10
[Invited Talk]
Formation of diamond pn junction cathodes and the vacuum switch application
Satoshi Koizumi, Daisuke Takeuchi (NIMS/JST)

(2) 14:10 - 14:35
Field Emission from a Carbon Material with Nano-Structure Fabricated by Electrochemistry
Yusuke Iwai (Onizuka Glass Co. Ltd./Shizuoka Univ.), Takayoshi Koike, Atsuo Jyouzuka, Tomonori Nakamura, Yoshihiro Onizuka (Onizuka Glass Co. Ltd.), Yoichiro Neo, Hidenori Mimura (Shizuoka Univ.)

(3) 14:35 - 15:00
In-situ transmission-electron microscopy measurement of field emission properties of graphene emitters
Katsuhisa Murakami, Konomi Yoshida, Jun-ichi Fujita (Univ. of Tsukuba)

(4) 15:00 - 15:25
The analysis of graphite field emitter inflamed at high temperature
Yoichiro Neo (Shizuoka Univ,), Yusuke Iwai, Atsuo Jyouzuka, Tomonori Nakamura (Onizuka Glass), Hidenori Mimura (Shizuoka Univ,)

----- Break ( 15 min. ) -----

(5) 15:40 - 16:05
Design of Extraction System of Field Emitter Arrays for Low Energy Electron Beam Production
Yasuhito Gotoh, Hiroshi Tsuji (Kyoto Univ.)

(6) 16:05 - 16:30
Electron ray tracing from Field Emitter Array incorporated with electrostatic lens
Hidekazu Murata, Hiroshi Shimoyama (Meijo Univ.), Yoichiro Neo, Hidenori Mimura (Shizuoka Univ.), Tomoya Yoshida, Masayoshi Nagao (AIST)

(7) 16:30 - 16:55
W field emission cathode covered with rare earth oxide mono-layer and transition metal oxide mono-layer
-- PEEM analysis and FEM analysis --
Hideaki Nakane, Hiroki Takeda (Muroran Inst. of Tech.), Takashi Kawakubo (KNCT)

(8) 16:55 - 17:20
On the mechanism of enhancement on field emission properties for carbon coated field emitters (Part-2)
Toshiharu Higuchi, Masahiro Sasaki, Shota Horie, Yoichi Yamada (Univ. of Tsukuba), Shuji Matsumoto, Shigeki Fukuda (KEK)

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Wed, Oct 23 (09:00 - 12:05)
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(9) 09:00 - 09:25
Photoassisted Electron Emission from Silicon Cathodes
Hidetaka Shimawaki (Hachinohe Inst. of Tech.), Yoichiro Neo, Hidenori Mimura (Shizuoka Univ.), Fujio Wakaya, Mikio Takai (Osaka Univ.), Tomoya Yoshida, Masayoshi Nagao (AIST)

(10) 09:25 - 09:50
Fabrication of volcano-structured double-gate Spindt-type FEA using double layered photoresist
Masayoshi Nagao, Tomoya Yoshida, Shunichi Yoshizawa, Takashi Nishi (AIST)

(11) 09:50 - 10:15
Field Emission of a Graphene Flower and its Application
Yusuke Iwai (Onizuka Co. Ltd./Shizuoka Univ.), Kazuo Muramatsu (Incubation Alliance Inc.), Shougo Tsuboi, Atsuo Jyouzuka, Tomonori Nakamura, Yoshihiro Onizuka (Onizuka Co. Ltd.), Yoichiro Neo, Hidenori Mimura (Shizuoka Univ.)

----- Break ( 10 min. ) -----

(12) 10:25 - 10:50
Electron emission from pyroelectric crystals excited using IR laser light and its X-ray source application
Satoshi Abo, Kosuke Nakahama, Michiaki Takahashi, Fujio Wakaya, Mikio Takai (Osaka Univ.)

(13) 10:50 - 11:15
Performance of electronic frequency tuning magnetron and simulation result of radar detecting capability with this magnetron
Hideyuki Obata, Kuniyoshi Furumoto, Naoki Tsuji (New Japan Radio)

(14) 11:15 - 11:40
Development of an X-band 800W pulse mini-TWT for Phased Array Applications
Takatsugu Munehiro, Junichi Kobayashi, Mitsuru Yoshida, Junichi Matsuoka (NCS), Yoshinobu Ueda, Satoshi Kainuma (NEC)

(15) 11:40 - 12:05
Active-matrix Drive Circuit for FEA-HARP Image Sensor with a Large Number of Pixels
Masakazu Nanba, Yuki Honda, Kazunori Miyakawa, Misao Kubota (NHK), Norifumi Egami (Kinki Univ.)

# Information for speakers
General Talk will have 20 minutes for presentation and 5 minutes for discussion.
Invited Talk will have 35 minutes for presentation and 5 minutes for discussion.

=== Technical Committee on Electron Device (ED) ===
# FUTURE SCHEDULE:

Thu, Nov 28, 2013 - Fri, Nov 29, 2013: [Wed, Sep 18], Topics: Ｎｉｔｒide and Compound Semiconductor Devices
Mon, Dec 16, 2013 - Tue, Dec 17, 2013: Research Institute of Electrical Communication Tohoku University [unfixed], Topics: Millimeter wave, terahertz wave devices and systems
Thu, Jan 16, 2014 - Fri, Jan 17, 2014<br> (changed): Kikai-Shinko-Kaikan Bldg. [Fri, Nov 8], Topics: Power devices, High-speed and high-frequency devices, Microwave Technologies, etc.

# SECRETARY:
Tetsuzo Ueda（Panasonic)
TEL：+81-6-6906-4940、FAX：+81-6-6906-2426
E-mail：