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=============================================== Technical Committee on Silicon Device and Materials (SDM) Chair: Tatsuya Kunikiyo (Renesas) Vice Chair: Takahiro Shinada (Tohoku Univ.) Secretary: Rihito Kuroda (Tohoku Univ.), Tadashi Yamaguchi (Renesas) Assistant: Hiroya Ikeda (Shizuoka Univ.) DATE: Wed, Jun 29, 2016 10:00 - 17:20 PLACE: (http://www.cictokyo.jp/access.html) TOPICS: Material Science and Process Technology for MOS Devices and Memories ---------------------------------------- Wed, Jun 29 AM (10:00 - 17:20) ---------------------------------------- (1) 10:00 - 10:20 [Invited Lecture] Effects of top TiN deposition and annealing process on electrical and physical properties of ferroelectric HfSiO MIM capacitor Yuuichi Kamimuta, Shosuke Fujii, Riichiro Takaishi, Tsunehiro Ino, Yasushi Nakasaki, Masumi Saitoh, Masato Koyama (Toshiba) (2) 10:20 - 10:40 [Invited Lecture] Preparation of orientation-controlled HfO2 –based films and their properties Hiroshi Funakub, Takao Shimizu, Kiriha Katayama, Takanori Mimura (Tokyo Tech.) (3) 10:40 - 11:00 [Invited Lecture] Design of SOI-FETs for Steep Slope Switching using Negative Capacitance in Ferroelectric Gate Insulators Hiroyuki Ota, Shinji Migita, Junichi Hattori, Koichi Fukuda (AIST), Akira Toriumi (The Univ. of Tokyo) ----- Break ( 15 min. ) ----- (4) 11:15 - 11:35 Fabrication of ferroelectric nanowire capacitors -- Towards high-density non-volatile ferroelectric memories -- Hironori Fujisawa, Masaru Shimizu, Seiji Nakashima (Univ. Hyogo) (5) 11:35 - 11:55 Proposal of vertical stacked type Fe-FET NAND logic and its application to system LSI Shigeyoshi Watanabe (Shonan Inst. Tech.), Tomohiro Yokota (Data Techno) (6) 11:55 - 12:15 Effect of Al2O3layer on leakage current properties for DRAM capacitor with ZrO2/Al2O3/ZrO2multilayer Takashi Onaya (Meiji Univ./NIMS), Toshihide Nabatame, Tomomi Sawada (NIMS/JST-CREST), Kazunori Kurishima (Meiji Univ./NIMS), Naomi Sawamoto (Meiji Univ.), Akihiko Ohi, Toyohiro Chikyo (NIMS), Atsushi Ogura (Meiji Univ.) ----- Lunch Break ( 75 min. ) ----- (7) 13:30 - 13:50 A resistive switching device based on breakdown and local anodic oxidation Kuniyuki Kakushima, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai (Tokyo Tech.) (8) 13:50 - 14:10 Characterization of electrically active defects in epitaxial GeSn layer grown on Ge substrate Yuichi Kaneda, Masayuki Kanematsu, Mitsuo Sakashita, Wakana Takeuchi, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) (9) 14:10 - 14:30 XPS Study on Potential Change and Electrical Dipole at SiO2/Semiconductor Interface Nobuyuki Fujimura, Akio Ohta, Hiromasa Watanabe, Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ.) ----- Break ( 15 min. ) ----- (10) 14:45 - 15:05 Low Temperature Formation of Thin SiO2 Film by Using Remote Oxygen Plasma Enhanced CVD NguyenXuan Truyen, Nobuyuki Fujimura, Daichi Takeuchi, Akio Ohta, Katsunori Makihara, Mitsuhisa Ikeda, Seiichi Miyazaki (Nagoya Univ.) (11) 15:05 - 15:25 Effects of ultraviolet irradiation on the band offset of Tantalum nanosheets/SiO2/Si interfaces Shuhei Hayami, Satoshi Toyoda, Katsutoshi Fukuda (Kyoto Univ.), Hidetaka Sugaya (Panasonic), Masahito Morita, Akiyoshi Nakata, Yoshiharu Uchimoto, Eiichiro Matsubara (Kyoto Univ.) (12) 15:25 - 15:45 [Invited Lecture] Application of layered chalcogenide materials to field effect transistor devices Keiji Ueno (Saitama Univ.) ----- Break ( 15 min. ) ----- (13) 16:00 - 16:20 [Invited Lecture] Structural-controlled synthesis of atomically thin layered materials and its plasma functionalization Toshiaki Kato, Toshiro Kaneko (Tohoku Univ.) (14) 16:20 - 16:40 [Invited Lecture] Self-assembled monolayer-based gate dielectrics for low voltage MoS2 FET Takamasa Kawanago, Shunri Oda (Tokyo Tech.) (15) 16:40 - 17:00 MoS2 film formation by RF magnetron sputtering for thin film transistors Takumi Ohashi, Kentaro Matsuura (Tokyo Tech), Seiya Ishihara, Yusuke Hibino, Naomi Sawamoto (Meiji Univ.), Kuniyuki Kakushima, Kazuo Tsutsui (Tokyo Tech), Atsushi Ogura (Meiji Univ.), Hitoshi Wakabayashi (Tokyo Tech) (16) 17:00 - 17:20 [Invited Lecture] Growth and characterization of atomically-thin transition metal dichalcogenides Yasumitsu Miyata (Tokyo Metropolitan Univ.) # Information for speakers General Talk will have 15 minutes for presentation and 5 minutes for discussion. Invited Lecture will have 15 minutes for presentation and 5 minutes for discussion. # CONFERENCE SPONSORS: - This conference is co-sponsored by The Japan Society of Applied Physics. === Technical Committee on Silicon Device and Materials (SDM) === # FUTURE SCHEDULE: Mon, Aug 1, 2016 - Wed, Aug 3, 2016: Central Electric Club [Wed, Jun 15], Topics: Analog, Mixed Analog and Digital, RF, and Sensor Interface, Low voltage/low power techniques, novel devices, circuits, and applications # SECRETARY: Rihito Kuroda(Tohoku Univ.) Tel 022-795-4833 Fax 022-795-4834 E-mail:        e3   Last modified: 2016-04-18 15:24:06 |
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