Wed, Jun 29 AM
10:00 - 17:20 |
| (1) |
10:00-10:20 |
[Invited Lecture]
Effects of top TiN deposition and annealing process on electrical and physical properties of ferroelectric HfSiO MIM capacitor |
Yuuichi Kamimuta, Shosuke Fujii, Riichiro Takaishi, Tsunehiro Ino, Yasushi Nakasaki, Masumi Saitoh, Masato Koyama (Toshiba) |
| (2) |
10:20-10:40 |
[Invited Lecture]
Preparation of orientation-controlled HfO2 –based films and their properties |
Hiroshi Funakub, Takao Shimizu, Kiriha Katayama, Takanori Mimura (Tokyo Tech.) |
| (3) |
10:40-11:00 |
[Invited Lecture]
Design of SOI-FETs for Steep Slope Switching using Negative Capacitance in Ferroelectric Gate Insulators |
Hiroyuki Ota, Shinji Migita, Junichi Hattori, Koichi Fukuda (AIST), Akira Toriumi (The Univ. of Tokyo) |
| |
11:00-11:15 |
Break ( 15 min. ) |
| (4) |
11:15-11:35 |
Fabrication of ferroelectric nanowire capacitors
-- Towards high-density non-volatile ferroelectric memories -- |
Hironori Fujisawa, Masaru Shimizu, Seiji Nakashima (Univ. Hyogo) |
| (5) |
11:35-11:55 |
Proposal of vertical stacked type Fe-FET NAND logic and its application to system LSI |
Shigeyoshi Watanabe (Shonan Inst. Tech.), Tomohiro Yokota (Data Techno) |
| (6) |
11:55-12:15 |
Effect of Al2O3layer on leakage current properties for DRAM capacitor with ZrO2/Al2O3/ZrO2multilayer |
Takashi Onaya (Meiji Univ./NIMS), Toshihide Nabatame, Tomomi Sawada (NIMS/JST-CREST), Kazunori Kurishima (Meiji Univ./NIMS), Naomi Sawamoto (Meiji Univ.), Akihiko Ohi, Toyohiro Chikyo (NIMS), Atsushi Ogura (Meiji Univ.) |
| |
12:15-13:30 |
Lunch Break ( 75 min. ) |
| (7) |
13:30-13:50 |
A resistive switching device based on breakdown and local anodic oxidation |
Kuniyuki Kakushima, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai (Tokyo Tech.) |
| (8) |
13:50-14:10 |
Characterization of electrically active defects in epitaxial GeSn layer grown on Ge substrate |
Yuichi Kaneda, Masayuki Kanematsu, Mitsuo Sakashita, Wakana Takeuchi, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) |
| (9) |
14:10-14:30 |
XPS Study on Potential Change and Electrical Dipole at SiO2/Semiconductor Interface |
Nobuyuki Fujimura, Akio Ohta, Hiromasa Watanabe, Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ.) |
| |
14:30-14:45 |
Break ( 15 min. ) |
| (10) |
14:45-15:05 |
Low Temperature Formation of Thin SiO2 Film by Using Remote Oxygen Plasma Enhanced CVD |
NguyenXuan Truyen, Nobuyuki Fujimura, Daichi Takeuchi, Akio Ohta, Katsunori Makihara, Mitsuhisa Ikeda, Seiichi Miyazaki (Nagoya Univ.) |
| (11) |
15:05-15:25 |
Effects of ultraviolet irradiation on the band offset of Tantalum nanosheets/SiO2/Si interfaces |
Shuhei Hayami, Satoshi Toyoda, Katsutoshi Fukuda (Kyoto Univ.), Hidetaka Sugaya (Panasonic), Masahito Morita, Akiyoshi Nakata, Yoshiharu Uchimoto, Eiichiro Matsubara (Kyoto Univ.) |
| (12) |
15:25-15:45 |
[Invited Lecture]
Application of layered chalcogenide materials to field effect transistor devices |
Keiji Ueno (Saitama Univ.) |
| |
15:45-16:00 |
Break ( 15 min. ) |
| (13) |
16:00-16:20 |
[Invited Lecture]
Structural-controlled synthesis of atomically thin layered materials and its plasma functionalization |
Toshiaki Kato, Toshiro Kaneko (Tohoku Univ.) |
| (14) |
16:20-16:40 |
[Invited Lecture]
Self-assembled monolayer-based gate dielectrics for low voltage MoS2 FET |
Takamasa Kawanago, Shunri Oda (Tokyo Tech.) |
| (15) |
16:40-17:00 |
MoS2 film formation by RF magnetron sputtering for thin film transistors |
Takumi Ohashi, Kentaro Matsuura (Tokyo Tech), Seiya Ishihara, Yusuke Hibino, Naomi Sawamoto (Meiji Univ.), Kuniyuki Kakushima, Kazuo Tsutsui (Tokyo Tech), Atsushi Ogura (Meiji Univ.), Hitoshi Wakabayashi (Tokyo Tech) |
| (16) |
17:00-17:20 |
[Invited Lecture]
Growth and characterization of atomically-thin transition metal dichalcogenides |
Yasumitsu Miyata (Tokyo Metropolitan Univ.) |
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