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|
| Chair |
|
Kazuhiko Honjo (Univ. of Electro-Comm.) |
| Vice Chair |
|
Takashi Ohira (Toyohashi Univ. of Tech.), Futoshi Kuroki (Kure National College of Tech.) |
| Secretary |
|
Kazuo Kawabata (Fujitsu Labs.), Kenjiro Nishikawa (NTT) |
| Assistant |
|
Kei Sato (NTT DoCoMo), Koji Shibata (Hachinohe Inst. of Tech.) |
|
|
|
| Chair |
|
Tamotsu Hashidume (Hokkaido Univ.) |
| Vice Chair |
|
Tetsu Kachi (Toyota Central R&D Labs.) |
| Secretary |
|
Naoki Hara (Fujitsu Labs.), Kunio Tsuda (Toshiba) |
| Assistant |
|
Michihiko Suhara (Tokyo Metropolitan Univ.), Tetsuzo Ueda (Panasonic) |
|
| Conference Date |
Thu, Jan 13, 2011 13:30 - 16:55
Fri, Jan 14, 2011 09:30 - 15:20 |
| Topics |
Compound Semiconductor IC and High-Speed, High-Frequency Devices/Microwave Technologies |
| Conference Place |
|
Thu, Jan 13 PM
13:30 - 16:55 |
| (1) |
13:30-13:55 |
The 5.8GHz Receiving and Rectenna Array for Wireless Communication and Power Transmission |
Masakazu Hori, Kosuke Isono, Hirofumi Noji, Yasuhiro Shibuya (TUS), Shigeo Kawasaki (JAXA) |
| (2) |
13:55-14:20 |
A Study on GaAs-HBT MMIC couplers with feedback circuit techniques |
Kazuya Yamamoto, Hitoshi Kurusu, Miyo Miyashita, Satoshi Suzuki, Akira Inoue (Mitsubishi Electric) |
| (3) |
14:20-14:45 |
Broadside Couplers using Offset-Coupled Lines with Adjacent Ground Through Holes in Multi-layered Substrate |
Takeshi Yuasa, Yukihiro Tahara, Tetsu Owada, Naofumi Yoneda (Mitsubishi Electric Corp.) |
| |
14:45-15:00 |
Break ( 15 min. ) |
| (4) |
15:00-15:25 |
Power Absorption Characteristics for Uniform Microwave Heating of Medium with High Conductivities |
Yuki Nakajima, Suguru Imai, Kenji Taguchi, Tatsuya Kashiwa (Kitami Inst. of Tech.), Toshihide Kitazawa (Ritsumeikan Univ.), Masahiro Suzuki, Kan-ichi Fujii (JAEA) |
| (5) |
15:25-15:50 |
Broadband High Efficiency Class-E GaN HEMT Amplifier |
Koji Yamanaka, Norihiro Yunoue, Shin Chaki, Masatoshi Nakayama, Yoshihito Hirano (Mitsubishi Electric) |
| |
15:50-16:05 |
Break ( 15 min. ) |
| (6) |
16:05-16:30 |
A High-Speed Digital-to-Analog Converter with InP HBT Technology for Multi-Level Optical Transmission Systems |
Munehiko Nagatani, Hideyuki Nosaka, Shogo Yamanaka, Kimikazu Sano, Koichi Murata (NTT) |
| (7) |
16:30-16:55 |
32-GHz Phase Shifter IC with 810° control range |
Hideyuki Nosaka, Munehiko Nagatani, Kimikazu Sano, Koichi Murata (NTT) |
Fri, Jan 14
09:30 - 15:20 |
| (8) |
09:30-09:55 |
Current collapse characterization of AlGaN/GaN HEMTs using by dual-gate structure |
Masafumi Tajima, Tamotsu Hashizume (Hokkaido Univ.) |
| (9) |
09:55-10:20 |
Two-Dimensional Analysis of Backside-Electrode and Gate-Field-Plate Effects on Buffer-Related Current Collapse in AlGaN/GaN HEMTs |
Hiraku Onodera, Atsushi Nakajima, Kazushige Horio (Shibaura Inst. Tech.) |
| |
10:20-10:35 |
Break ( 15 min. ) |
| (10) |
10:35-11:00 |
Boosting of Blocking Voltages in GaN Transistors by Widening Depletion Layer in Si Substrate |
Hidekazu Umeda, Asamira Suzuki, Yoshiharu Anda, Masahiro Ishida, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda (Panasonic Co.) |
| (11) |
11:00-11:25 |
AlGaN/GaN HFETs using highly C-doped layers on Si substrate |
Takuya Kokawa, Syusuke Kaya, Nariaki Ikeda, Sadahiro Kato (APD) |
| (12) |
11:25-11:50 |
Developing GaN HEMTs for Ka-Band with 20W |
Keiichi Matsushita, Hiroyuki Sakurai, Yasushi Kashiwabara, Kazutoshi Masuda, Ken Onodera, Hisao Kawasaki, Kazutaka Takagi, Yoshiharu Takada, Kunio Tsuda (Toshiba) |
| |
11:50-13:00 |
Lunch Break ( 70 min. ) |
| (13) |
13:00-13:25 |
Process dependence of MOS gate dielectric films on 3C-SiC-OI |
Keisuke Yokoyama, Hiroyuki Nakamura, Motoi Nakao, Katsunori Onishi (KIT) |
| (14) |
13:25-13:50 |
III-V quantum well channel MOSFET with back electrode |
Toru Kanazawa, Ryousuke Terao, Yutaro Yamaguchi, Shunsuke Ikeda, Yoshiharu Yonai, Atsushi Kato, Yasuyuki Miyamoto (Tokyo Tech) |
| (15) |
13:50-14:15 |
New Stacked Metal-Insulator-Metal Capacitor for future InP-based ICs Applications |
Takuya Tsutsumi, Suehiro Sugitani, Kazumi Nishimura, Minoru Ida (NTT) |
| |
14:15-14:30 |
Break ( 15 min. ) |
| (16) |
14:30-14:55 |
A low 1/f Noise and High Reliability InP/GaAsSb DHBT for 76 GHz Automotive Radars |
Ko Kanaya, Hirotaka Amasuga, Shinsuke Watanabe, Yoshitsugu Yamamoto, Naoki Kosaka, Shinichi Miyakuni, Seiki Goto, Akihiro Shima (Mitsubishi Electric) |
| (17) |
14:55-15:20 |
A Wafer-Level-Chip-Size-Package Technique with Inverted Microstrip Lines for mm-wave Si CMOS ICs |
Yasufumi Kawai, Shinji Ujita, Takeshi Fukuda, Hiroyuki Sakai, Tetsuzo Ueda, Tsuyoshi Tanaka (Panasonic) |
| Announcement for Speakers |
| General Talk | Each speech will have 20 minutes for presentation and 5 minutes for discussion. |
| Contact Address and Latest Schedule Information |
| MW |
Technical Committee on Microwaves (MW) [Latest Schedule]
|
| Contact Address |
Kei Satoh (NTT DOCOMO,INC.)
TEL:+81-46-840-6230
FAX:+81-46-840-3789
E- :   i   
or Kazuo Kawabata(Fujitsu Laboratories Ltd.)
E-:Ka ba  Ka o     |
| ED |
Technical Committee on Electron Device (ED) [Latest Schedule]
|
| Contact Address |
Hara Naoki （Fujitsu Lab.）
TEL : +81-46-250-8242、FAX : +81-46-250-8168
E- :    o
Kunio Tsuda（Toshiba）
TEL : +81-44-549-2142、FAX : +81-44-520-1501
E- :   o  ba
Michihiko Suhara (Tokyo Metropolitan Univ.)
TEL : +81-42-677-2765 Fax : +81-42-677-2756
E- :      t 
Tetsuzo Ueda（Panasonic)
TEL：+81-75-956-8273、FAX：+81-75-956-9110
E-：   zopa c |
Last modified: 2010-11-17 13:18:53
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