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Technical Committee on Silicon Device and Materials (SDM)
Chair: Yasuo Nara (Fujitsu Semiconductor) Vice Chair: Yuzou Oono (Univ. of Tsukuba)
Secretary: Shintaro Nomura (Univ. of Tsukuba), Yoshitaka Sasago (Hitachi)

DATE:
Tue, Jun 18, 2013 09:00 - 17:45

PLACE:
Kikai-Shinko-Kaikan Bldg.(http://www.jspmi.or.jp/kaigishitsu/access.html. Prof. Seiichi Miyazaki (Nagoya Univ.). +81-52-789-3588)

TOPICS:
Science and Technology for Dielectric Thin Films for Electron Devices

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Tue, Jun 18 AM (09:00 - 14:55)
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(1) 09:00 - 09:20
Control of Pr-Oxide Crystalline Phase by Regulating Oxidant Partial Pressure and Si Diffusion
Kimihiko Kato, Mitsuo Sakashita, Wakana Takeuchi, Noriyuki Taoka, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.)

(2) 09:20 - 09:40
Formation of Ultra Thin GeO2 Film Using Tetraethoxy-Germanium
Teppei Yoshida, Kimihiko Kato, Shigehisa Shibayama, Mitsuo Sakashita, Noriyuki Taoka, Wakana Takeuchi, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.)

(3) 09:40 - 10:00
Clarification of oxidation mechanisms in Al2O3/Ge structure and impact of interface reactions on interface properties
Shigehisa Shibayama, Kimihiko Kato, Mitsuo Sakashita, Wakana Takeuchi, Noriyuki Taoka, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.)

(4) 10:00 - 10:20
Germanide formation in metal/high-k/Ge gate stacks and its impact on electrical properties
Takuji Hosoi, Iori Hideshima, Yuya Minoura, Ryohei Tanaka (Osaka Univ.), Akitaka Yoshigoe, Yuden Teraoka (JAEA), Takayoshi Shimura, Heiji Watanabe (Osaka Univ.)

----- Break ( 15 min. ) -----

(5) 10:35 - 10:55
Suppression of GeOx with rutile TiO2 Interlayer between HfO2 and Ge
Kazuyoshi Kobashi (Meiji Univ.), Takahiro Nagata, Toshihide Nabatame, Yoshiyuki Yamashita (NIMS), Atsushi Ogura (Meiji Univ.), Toyohiro Chikyow (NIMS)

(6) 10:55 - 11:15
Mobility Enhancement for Ge p-MOSFET with Metal Source/Drain by Hf Introduction into Gate Stack
Keisuke Yamamoto, Takahiro Sada, Dong Wang, Hiroshi Nakashima (Kyushu Univ.)

(7) 11:15 - 11:35
Impact of metal gate electrodes on electrical properties of InGaAs MOS gate stacks
Chih-Yu Chang, Masafumi Yokoyama, Sang-Hyeon Kim (Univ. of Tokyo), Osamu Ichikawa, Takenori Osada, Masahiko Hata (Sumitomo Chemical), Mitsuru Takenaka, Shinichi Takagi (Univ. of Tokyo)

(8) 11:35 - 11:55
Schottky Barrier Height and spin polarization of Fe3Si/Ge Interfaces; First-Principles Study
Kyosuke Kobinata, Takashi Nakayama (Chiba Univ.)

(9) 11:55 - 12:15
Guiding principles of Long Lifespan Archive Memory using MONOS type Memory
Hiroki Shirakawa, Keita Yamaguchi, Katsumasa Kamiya, Kenji Shiraishi (Univ. of Tsukuba)

----- Lunch Break ( 60 min. ) -----

(10) 13:15 - 13:35
High Density Formation of CoPt Alloy Nanodots Induced by Remote Hydrogen Plasma and Charging and Magnetizing Characteristics
Katsunori Makihara, Ryo Fukuoka, Hai Zhang, Yuuki Kabeya (Nagoya Univ.), Akio Ohta (Hiroshima Univ.), Seiichi Miyazaki (Nagoya Univ.)

(11) 13:35 - 13:55
Epitaxial growth of iron oxide nanodots on Si substrate and their electronic states
Takafumi Ishibe, Yoshiaki Nakamura, Hideki Matsui, Shotaro Takeuchi, Akira Sakai (Osaka Univ.)

(12) 13:55 - 14:15
Resistive Memory Effect of Bio-nanoparticle in Si Oxide Film
Mutsunori Uenuma (Osaka Univ.), Takahiko Ban, Ichiro Yamashita, Yukiharu Uraoka (NAIST)

(13) 14:15 - 14:35
Resistive Switching Properties of SiOx/TiO2 Multi-Stack in Ti-electrode MIM Diodes
Akio Ohta (Hiroshima Univ.), Motoki Fukusima, Katsunori Makihara (Nagoya Univ.), Hideki Murakami, Seiichiro Higashi (Hiroshima Univ.), Seiichi Miyazaki (Nagoya Univ.)

(14) 14:35 - 14:55
SiC Electric-Field-Induced Resistive Nonvolatile Memory
-- MIS and pn-Diode Type Memories --
Yoshiyuki Suda, Tatsumi Komatsu, Nobuo Yamaguchi, Yoshihiko Sato, Yukino Yamada, Atsushi Yamashita, Takahiro Tsukamoto (Tokyo Univ. of Agriculture and Tech.)

----- Break ( 15 min. ) -----

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Tue, Jun 18 PM (15:10 - 17:45)
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(1) 15:10 - 15:30
[Invited Lecture]
High performance of SiC-MOS devices by POCl3 annealing
Hiroshi Yano, Tomoaki Hatayama, Takashi Fuyuki (NAIST)

(2) 15:30 - 15:50
[Invited Lecture]
Implementation of High-k Gate Dielectrics in SiC Power MOSFET
Takuji Hosoi (Osaka Univ.), Shuji Azumo, Yusaku Kashiwagi, Shigetoshi Hosaka (Tokyo Electron), Ryota Nakamura, Yuki Nakano, Hirokazu Asahara, Takashi Nakamura (ROHM), Tsunenobu Kimoto (Kyoto Univ.), Takayoshi Shimura, Heiji Watanabe (Osaka Univ.)

(3) 15:50 - 16:10
[Invited Lecture]
Challenges of high-reliability in SiC-MOS gate structures
Junji Senzaki, Atsushi Shimozato, Yasunori Tanaka, Hajime Okumura (AIST)

(4) 16:10 - 16:30
[Invited Lecture]
Unusual Generation and Elimination of Mobile Ions in Thermally Grown Oxides in SiC-MOS Devices
Heiji Watanabe, Atthawut Chanthaphan (Osaka Univ), Yuki Nakano, Takashi Nakamura (ROHM), Takuji Hosoi, Takayoshi Shimura (Osaka Univ)

----- Break ( 15 min. ) -----

(5) 16:45 - 17:05
[Invited Lecture]
An attempt for clarification of SiC oxidation mechanism
-- Common/different point to Si oxidation --
Yasuto Hijikata, Shuhei Yagi, Hiroyuki Yaguchi (Saitama Univ.)

(6) 17:05 - 17:25
[Invited Lecture]
Study on Near-interface Structures of Thermal Oxides Grown on4H-SiC Characterized by Infrared Spectroscopy
Koji Kita (Univ. of Tokyo/JST), Hirohisa Hirai (Univ. of Tokyo)

(7) 17:25 - 17:45
[Invited Lecture]
4H-SiC MOS interface states studied by electron spin resonance spectroscopy
T. Umeda (Univ. of Tsukuba), M. Okamoto, R. Kosugi (AIST), R. Arai, Y. Satoh (Univ. of Tsukuba), S. Harada, Hajime Okumura (AIST), T. Makino, Takeshi Ohshima (JAEA)

# CONFERENCE SPONSORS:
- This conference is co-sponsored by Silicon Technology Division, The Japan Society of Applied Physics.

=== Technical Committee on Silicon Device and Materials (SDM) ===
# FUTURE SCHEDULE:

Thu, Aug 1, 2013 - Fri, Aug 2, 2013: Kanazawa University [Thu, May 16], Topics: Low voltage/low power techniques, novel devices, circuits, and applications

# SECRETARY:
Shintaro Nomura (Univ. of Tsukuba)
E-mail: s