Tue, Jun 18 AM  09:00 - 14:55
(1)	09:00-09:20	Control of Pr-Oxide Crystalline Phase by Regulating Oxidant Partial Pressure and Si Diffusion SDM2013-44	Kimihiko Kato, Mitsuo Sakashita, Wakana Takeuchi, Noriyuki Taoka, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.)
(2)	09:20-09:40	Formation of Ultra Thin GeO2 Film Using Tetraethoxy-Germanium SDM2013-45	Teppei Yoshida, Kimihiko Kato, Shigehisa Shibayama, Mitsuo Sakashita, Noriyuki Taoka, Wakana Takeuchi, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.)
(3)	09:40-10:00	Clarification of oxidation mechanisms in Al2O3/Ge structure and impact of interface reactions on interface properties SDM2013-46	Shigehisa Shibayama, Kimihiko Kato, Mitsuo Sakashita, Wakana Takeuchi, Noriyuki Taoka, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.)
(4)	10:00-10:20	Germanide formation in metal/high-k/Ge gate stacks and its impact on electrical properties SDM2013-47	Takuji Hosoi, Iori Hideshima, Yuya Minoura, Ryohei Tanaka (Osaka Univ.), Akitaka Yoshigoe, Yuden Teraoka (JAEA), Takayoshi Shimura, Heiji Watanabe (Osaka Univ.)
	10:20-10:35	Break ( 15 min. )
(5)	10:35-10:55	Suppression of GeOx with rutile TiO2 Interlayer between HfO2 and Ge SDM2013-48	Kazuyoshi Kobashi (Meiji Univ.), Takahiro Nagata, Toshihide Nabatame, Yoshiyuki Yamashita (NIMS), Atsushi Ogura (Meiji Univ.), Toyohiro Chikyow (NIMS)
(6)	10:55-11:15	Mobility Enhancement for Ge p-MOSFET with Metal Source/Drain by Hf Introduction into Gate Stack SDM2013-49	Keisuke Yamamoto, Takahiro Sada, Dong Wang, Hiroshi Nakashima (Kyushu Univ.)
(7)	11:15-11:35	Impact of metal gate electrodes on electrical properties of InGaAs MOS gate stacks SDM2013-50	Chih-Yu Chang, Masafumi Yokoyama, Sang-Hyeon Kim (Univ. of Tokyo), Osamu Ichikawa, Takenori Osada, Masahiko Hata (Sumitomo Chemical), Mitsuru Takenaka, Shinichi Takagi (Univ. of Tokyo)
(8)	11:35-11:55	Schottky Barrier Height and spin polarization of Fe3Si/Ge Interfaces; First-Principles Study SDM2013-51	Kyosuke Kobinata, Takashi Nakayama (Chiba Univ.)
(9)	11:55-12:15	Guiding principles of Long Lifespan Archive Memory using MONOS type Memory SDM2013-52	Hiroki Shirakawa, Keita Yamaguchi, Katsumasa Kamiya, Kenji Shiraishi (Univ. of Tsukuba)
	12:15-13:15	Lunch Break ( 60 min. )
(10)	13:15-13:35	High Density Formation of CoPt Alloy Nanodots Induced by Remote Hydrogen Plasma and Charging and Magnetizing Characteristics SDM2013-53	Katsunori Makihara, Ryo Fukuoka, Hai Zhang, Yuuki Kabeya (Nagoya Univ.), Akio Ohta (Hiroshima Univ.), Seiichi Miyazaki (Nagoya Univ.)
(11)	13:35-13:55	Epitaxial growth of iron oxide nanodots on Si substrate and their electronic states SDM2013-54	Takafumi Ishibe, Yoshiaki Nakamura, Hideki Matsui, Shotaro Takeuchi, Akira Sakai (Osaka Univ.)
(12)	13:55-14:15	Resistive Memory Effect of Bio-nanoparticle in Si Oxide Film SDM2013-55	Mutsunori Uenuma (Osaka Univ.), Takahiko Ban, Ichiro Yamashita, Yukiharu Uraoka (NAIST)
(13)	14:15-14:35	Resistive Switching Properties of SiOx/TiO2 Multi-Stack in Ti-electrode MIM Diodes SDM2013-56	Akio Ohta (Hiroshima Univ.), Motoki Fukusima, Katsunori Makihara (Nagoya Univ.), Hideki Murakami, Seiichiro Higashi (Hiroshima Univ.), Seiichi Miyazaki (Nagoya Univ.)
(14)	14:35-14:55	SiC Electric-Field-Induced Resistive Nonvolatile Memory -- MIS and pn-Diode Type Memories -- SDM2013-57	Yoshiyuki Suda, Tatsumi Komatsu, Nobuo Yamaguchi, Yoshihiko Sato, Yukino Yamada, Atsushi Yamashita, Takahiro Tsukamoto (Tokyo Univ. of Agriculture and Tech.)
	14:55-15:10	Break ( 15 min. )
Tue, Jun 18 PM  15:10 - 17:45
(1)	15:10-15:30	[Invited Lecture] High performance of SiC-MOS devices by POCl3 annealing SDM2013-58	Hiroshi Yano, Tomoaki Hatayama, Takashi Fuyuki (NAIST)
(2)	15:30-15:50	[Invited Lecture] Implementation of High-k Gate Dielectrics in SiC Power MOSFET SDM2013-59	Takuji Hosoi (Osaka Univ.), Shuji Azumo, Yusaku Kashiwagi, Shigetoshi Hosaka (Tokyo Electron), Ryota Nakamura, Yuki Nakano, Hirokazu Asahara, Takashi Nakamura (ROHM), Tsunenobu Kimoto (Kyoto Univ.), Takayoshi Shimura, Heiji Watanabe (Osaka Univ.)
(3)	15:50-16:10	[Invited Lecture] Challenges of high-reliability in SiC-MOS gate structures SDM2013-60	Junji Senzaki, Atsushi Shimozato, Yasunori Tanaka, Hajime Okumura (AIST)
(4)	16:10-16:30	[Invited Lecture] Unusual Generation and Elimination of Mobile Ions in Thermally Grown Oxides in SiC-MOS Devices SDM2013-61	Heiji Watanabe, Atthawut Chanthaphan (Osaka Univ), Yuki Nakano, Takashi Nakamura (ROHM), Takuji Hosoi, Takayoshi Shimura (Osaka Univ)
	16:30-16:45	Break ( 15 min. )
(5)	16:45-17:05	[Invited Lecture] An attempt for clarification of SiC oxidation mechanism -- Common/different point to Si oxidation -- SDM2013-62	Yasuto Hijikata, Shuhei Yagi, Hiroyuki Yaguchi (Saitama Univ.)
(6)	17:05-17:25	[Invited Lecture] Study on Near-interface Structures of Thermal Oxides Grown on4H-SiC Characterized by Infrared Spectroscopy SDM2013-63	Koji Kita (Univ. of Tokyo/JST), Hirohisa Hirai (Univ. of Tokyo)
(7)	17:25-17:45	[Invited Lecture] 4H-SiC MOS interface states studied by electron spin resonance spectroscopy SDM2013-64	T. Umeda (Univ. of Tsukuba), M. Okamoto, R. Kosugi (AIST), R. Arai, Y. Satoh (Univ. of Tsukuba), S. Harada, Hajime Okumura (AIST), T. Makino, Takeshi Ohshima (JAEA)

Contact Address and Latest Schedule Information
SDM	Technical Committee on Silicon Device and Materials (SDM)   [Latest Schedule]
	Contact Address	Shintaro Nomura (Univ. of Tsukuba) E-: sccba

Last modified: 2013-04-12 16:12:02