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Technical Committee on Microwaves (MW)
Chair: Osamu Hashimoto (Aoyama Gakuin Univ.) Vice Chair: Takashi Ohira (Toyohashi Univ. of Tech.)
Secretary: Masayoshi Nakayama (Mitsubishi Electric), Atsushi Sanada (Yamaguchi Univ.)
Assistant: Yogen Cho (Ryukoku Univ.), Kei Sato (NTT DoCoMo)

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Technical Committee on Electron Device (ED)
Chair: Masaaki Kuzuhara (Univ. of Fukui) Vice Chair: Tamotsu Hashidume (Hokkaido Univ.)
Secretary: Koichi Murata (NTT)
Assistant: Naoki Hara (Fujitsu Labs.), Kunio Tsuda (Toshiba)

DATE:
Wed, Jan 14, 2009 13:00 - 16:40
Thu, Jan 15, 2009 09:30 - 16:40
Fri, Jan 16, 2009 09:30 - 12:10

PLACE:

TOPICS:
Compound Semiconductor ICs, High-speed and high-frequency devices

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Wed, Jan 14 PM (13:00 - 16:40)
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(1) 13:00 - 13:25
A development of multi-port switch for 60GHz multi-sector switched-beam antenna
Shoichi Kitazawa, Amane Miura, Masataka Ohira, Susumu Ano, Masazumi Ueba (ATR)

(2) 13:25 - 13:50
24-GHz 1-V Pseudo-Stacked Mixer
Nobuhiro Shiramizu, Toru Masuda, Takahiro Nakamura, Katsuyoshi Washio (Hitachi, Ltd.)

(3) 13:50 - 14:15
Millimeter-wave Discrete Harmonic Mixer using Flipchip Interconnect
Kenji Kawakami, Takuya Suzuki, Ko Kanaya, Yoichi Kitamura, Morishige Hieda (Mitsubishi Electric Co.)

----- Break ( 10 min. ) -----

(4) 14:25 - 14:50
design of broadband amplifier with consideration of output capacitance
Eigo Kuwata, Koji Yamanaka, Tasuku Kirikoshi, Akira Inoue, Moriyasu Miyazaki (Mitsubishi Electric Co.)

(5) 14:50 - 15:15
V-band 8th Order Push-Push Oscillator
Kengo Kawasaki, Takayuki Tanaka, Masayoshi Aikawa (Saga Univ.)

----- Break ( 10 min. ) -----

(6) 15:25 - 15:50
GaN-based Natural Super Junction Diodes
Hidetoshi Ishida, Daisuke Shibata, Hisayoshi Matsuo, Manabu Yanagihara, Yasuhiro Uemoto, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda (Panasonic Co.)

(7) 15:50 - 16:15
Evaluation of reverse conduction GaN FET
Osamu Machida, Nobuo Kaneko, Ryohei Baba, Michiyoshi Izawa, Shinichi Iwakami, Masataka Yanagihara, Hirokazu Goto, Akio Iwabuchi (Sanken Electric Co.)

(8) 16:15 - 16:40
Application of High Voltage GaN-HEMT for Electrodelss Fluorescent Lamp Circuit
Wataru Saito (Toshiba Corp.), Tomokazu Domon (Toshiba Business and Life Service), Ichiro Omura, Tomohiro Nitta, Yorito Kakiuchi, Yasunobu Saito, Kunio Tsuda, Masakazu Yamaguchi (Toshiba Corp.)

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Thu, Jan 15 AM (09:30 - 16:40)
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(9) 09:30 - 09:55
Analysis of Temperature Distribution of a Heated Material Placed in a Microwave Oven
-- Considering the Change of Electric Permittivity by Temperature Rise --
Masaki Karakawa, Shinya Watanabe, Osamu Hashimoto (Aoyama Gakuin Univ.)

(10) 09:55 - 10:20
Improvement of the Stopband Characteristics of Banpass Filters Using Microstrip Composite Shunt Resonators
Takanori Tozawa, Zhewang Ma (Saitama Univ.), Chun-Ping Chen (Kanagawa Univ, Japan), Tetsuo Anada (Kanagawa Univ.), Yoshio Kobayashi (Saitama Univ.)

(11) 10:20 - 10:45
Analysis of A Microstrip Parallel-Coupled Dual-Mode Ring Resonator and Its Application to the Design of Filters
Hideyuki Sasaki, Zhewang Ma (Saitama Univ.), Chun-Ping Chen (Kanagawa Univ, Japan.), Tetsuo Anada (Kanagawa Univ.), Yoshio Kobayashi (Saitama Univ.)

----- Break ( 10 min. ) -----

(12) 10:55 - 11:20
Submillimeter Wave Nonreciprocal Propagation Characteristics of a Coupled Line Containing Solid-State Plasma Material
Kei Maruyama, Tetsuo Obunai, Shinichi Yodokawa, Satoru Kousaka (Akita Univ.)

(13) 11:20 - 11:45
Low Loss Coplanar Waveguide Structure on High-Resistivity Silicon Substrate
Takehiko Makita, Isao Tamai, Shinichi Hoshi, Shohei Seki (Oki Electric Industry Co., Ltd.)

----- Break ( 75 min. ) -----

(14) 13:00 - 13:25
A Study on HBT RF Power Detectors with Directional Couplers on a GaAs Substrate
Kazuya Yamamoto, Hitoshi Kurusu, Miyo Miyashita, Satoshi Suzuki, Nobuyuki Ogawa, Masatoshi Nakayama (Mitsubishi Electric Co.)

(15) 13:25 - 13:50
Influence of Gate Structure on Parasitic Gate Delay in InGaAs-Channel HEMTs
Kohei Horiike, Syunsuke Fukuda, Keisuke Akagawa, Tetsuya Suemitsu, Taiichi Otsuji (Tohoku Univ.)

(16) 13:50 - 14:15
Reduction of the Base Transit Time in Ultra-thin Graded-Base InP/GaInAs Heterojunction Bipolar Transistor
Takafumi Uesawa, Masayuki Yamada, Yasuyuki Miyamoto, Kazuhito Furuya (Tokyo Inst. of Tech.)

----- Break ( 10 min. ) -----

(17) 14:25 - 14:50
Two-channel InP HBT Differential Automatic-gain-control Transimpedance Amplifier IC for 43-Gbit/s DQPSK Photoreceiver
Hiroyuki Fukuyama, Toshihiro Itoh, Tomofumi Furuta, Kenji Kurishima, Masami Tokumitsu, Koichi Murata (NTT)

(18) 14:50 - 15:15
High-frequency and low-noise performances of InP-based HEMTs for millimeter-wave monolithic integrated circuits
Issei Watanabe, Akira Endoh (National Inst. of Info.&Com. Tech.), Takashi Mimura (National Inst. of Info.&Com. Tech/Fujitsu Lab. Limited,), Toshiaki Matsui (National Inst. of Info.&Com. Tech.)

----- Break ( 10 min. ) -----

(19) 15:25 - 15:50
Characteristics on Primary Radiator Fed by Coaxial Cable at 60GHz
Makoto Okiyokota, Motonori Nakamura, Futoshi Kuroki (Inst. of National College of Tech.)

(20) 15:50 - 16:15
Experimental Study on Bilaterally Metal-loaded Tri-plate Transmission Line at Millimeter-wavelengths
Ryo-ji Tamaru, Futoshi Kuroki (Kure Nat'l Coll of Tech)

(21) 16:15 - 16:40
A Report on the China-Japan Joint Microwave Conference 2008
Futoshi Kuroki (Kure Nat'l Coll of Tech)

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Fri, Jan 16 AM (09:30 - 12:10)
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(22) 09:30 - 09:55
C-band GaN-HEMT Power Amplifier with Over 300-W Output Power and Over 50-% Efficiency
Hisao Shigematsu, Yusuke Inoue, Satoshi Masuda, Masao Yamada, Masahito Kanamura, Toshihiro Ohki, Kozo Makiyama, Naoya Okamoto, Kenji Imanishi, Toshihide Kikkawa, Kazukiyo Joshin, Naoki Hara (Fujitsu Lab. Ltd.,)

(23) 09:55 - 10:20
Effect of Temperature on Cryogenic DC and RF Characteristics of AlGaN/GaN MIS-HEMTs
Akira Endoh, Issei Watanabe, Yoshimi Yamashita (National Inst. of Info and Com Tech.), Takashi Mimura (National Inst. of Info and Com Tech/Fujitsu Lab Ltd.,), Toshiaki Matsui (National Inst. of Info and Com Tech.)

(24) 10:20 - 10:45
AlGaN/GaN MIS-HFETs Using In-situ SiN as Gate Insulators
Masayuki Kuroda, Tomohiro Murata, Satoshi Nakazawa, Toshiyuki Takizawa, Masaaki Nishijima, Manabu Yanagihara, Tetsuzo Ueda, Tsuyoshi Tanaka (Panasonic)

----- Break ( 10 min. ) -----

(25) 10:55 - 11:20
High-Power GaN-HEMT with High Three-Terminal Breakdown Voltage for W-band Applications
Kozo Makiyama, Toshihiro Ohki, Masahito Kanamura, Kazukiyo Joshin, Kenji Imanishi (Fujitsu Ltd/Fujitsu Lab. Ltd.), Naoki Hara (Fujitsu Lab. Ltd.), Toshihide Kikkawa (Fujitsu Ltd/Fujitsu Lab. Ltd.)

(26) 11:20 - 11:45
A High Efficiency Class-F GaN HEMT Power Amplifier with a Diode Predistortion Linearizer
Akihiro Ando, Yoichiro Takayama, Tsuyoshi Yoshida, Ryo Ishikawa, Kazuhiko Honjo (The Univ of Electro-Communications)

(27) 11:45 - 12:10
Mesa-gate AlGaN/GaN HEMT having nano-width channels
Kota Ohi, Tamotsu Hashizume (Hokkaido Univ.)

# Information for speakers
General Talk will have 20 minutes for presentation and 5 minutes for discussion.

=== Technical Committee on Microwaves (MW) ===
# FUTURE SCHEDULE:

Feb, 2009: Recess
Fri, Mar 6, 2009: NHK Science & Technical Research Lab. [Thu, Dec 11]
Thu, Apr 23, 2009: Kikai-Shinko-Kaikan Bldg. [Tue, Feb 17]

# SECRETARY:
Yogen Cho (Ryukoku University)
TEL:077-543-7495, ext.:2495
FAX:077-543-7428
E-mail:z

or Masatoshi Nakayama (Mitsubishi Electric Corp.)
E-mail:Na

Elect

=== Technical Committee on Electron Device (ED) ===
# FUTURE SCHEDULE:

Thu, Feb 26, 2009 - Fri, Feb 27, 2009: Hokkaido Univ. [Mon, Dec 8], Topics: Functional nanodevices and related technologies
Thu, Apr 23, 2009 - Fri, Apr 24, 2009: Tohoku Univ. [Sun, Feb 22], Topics: TFT, etc

# SECRETARY:
Koichi Murata（NTT)
TEL：046-240-2871、FAX：046-270-2872
E-mail：