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Technical Committee on Silicon Device and Materials (SDM)
Chair: Tetsuro Endo (Tohoku Univ.) Vice Chair: Yasuo Nara (Fujitsu Microelectronics)
Secretary: Yukinori Ono (NTT), Katsunori Onishi (Kyushu Inst. of Tech.)
Assistant: Shintaro Nomura (Univ. of Tsukuba)
DATE:
Thu, Oct 21, 2010 14:00 - 18:10
Fri, Oct 22, 2010 09:30 - 16:50
PLACE:
Niche, Tohoku University(http://www.fff.niche.tohoku.ac.jp/index_e.html. Tetsuya Goto. +81-22-795-3977)
TOPICS:
Semiconductor process science and new technology
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Thu, Oct 21 PM (14:00 - 18:10)
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(1) 14:00 - 15:00
[Invited Talk]
Channel strain evaluation for advanced LSI
Atsushi Ogura, Daisuke Kosemura, Munehisa Takei, Motohiro Tomita (Meiji Univ.)
(2) 15:00 - 15:30
Stress Tensor Measurements using Raman Spectroscopy with High-NA Oil-Immersion Lens
Daisuke Kosemura, Atsushi Ogura (Meiji Univ.)
(3) 15:30 - 16:00
Mechanism of Work Function Modulation of PtSi Alloying with Yb
Jumpei Ishikawa, Jun Gao, Shun-ichiro Ohmi (Tokyo Tech)
----- Break ( 10 min. ) -----
(4) 16:10 - 16:40
A Study on Precise Control of PtSi Work Function by Alloying with Hf
Jun Gao, Jumpei Ishikawa, Shun-ichiro Ohmi (Tokyo Tech)
(5) 16:40 - 17:10
Effect of ultra-thin Yb layer on n-type characteristics of pentacene based MOS diodes
Young-uk Song, Hiroshi Ishiwara, Shun-ichiro Ohmi (Tokyo Inst. of Tech.)
(6) 17:10 - 17:40
Low Resistance Source/Drain Contacts with Low Schottky Barrier for High Performance Transistors
Hiroaki Tanaka, Rihito Kuroda, Yukihisa Nakao, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.)
(7) 17:40 - 18:10
Low-temperature crystallization of thin-film amorphous silicon
Yoko Iwakaji, Jun Hirota, Moto Yabuki, Hirokazu Ishida, Wakana Kaneko, Ichiro Mizushima, Hiroshi Akahori (Toshiba)
----- Break ( 20 min. ) -----
----- Banquet ( 120 min. ) -----
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Fri, Oct 22 AM (09:30 - 12:10)
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(8) 09:30 - 10:00
Study on Electron Transfer in Light-Emitting Polymer/Cathode Interface by Luminescence Computational Chemistry
Itaru Yamashita, Hiroaki Onuma, Ryo Nagumo, Ryuji Miura, Ai Suzuki, Hideyuki Tsuboi, Nozomu Hatakeyama, Akira Endou, Hiromitsu Takaba, Momoji Kubo, Akira Miyamoto (Tohoku Univ.)
(9) 10:00 - 10:30
Emission Property Prediction of Eu2+-doped Phosphors from Crystal Structures: Material Informatics Study
Hiroaki Onuma, Daiki Yoshihara, Itaru Yamashita, Ryo Nagumo, Ryuji Miura, Ai Suzuki, Hideyuki Tsuboi, Nozomu Hatakeyama, Akira Endou, Hiromitsu Takaba, Momoji Kubo, Akira Miyamoto (Tohoku Univ.)
(10) 10:30 - 11:00
Theoretical Study on Carrier Transfer in Si/SiC Quantum Dot Solar Cells
Sho Hirose, Itaru Yamashita, Ryo Nagumo, Ryuji Miura, Ai Suzuki, Hideyuki Tsuboi, Nozomu Hatakeyama, Akira Endou, Hiromitsu Takaba, Momoji Kubo, Akira Miyamoto (Tohoku Univ.)
----- Break ( 10 min. ) -----
(11) 11:10 - 11:40
Evaluation of Internal Strain and Electron Mobility in poly-Si TFTs Formed by CW Laser Lateral Crystallization
Shuntaro Fujii, Shin-Ichiro Kuroki, Koji Kotani (Tohoku Univ.)
(12) 11:40 - 12:10
Fabrication of Highly Crystalline-Oriented Poly-Si Thin Films by using Double -Line-Beam CLC for High Performance LPTS-TFT
Shin-Ichiro Kuroki, Yuya Kawasaki, Shuntaro Fujii, Koji Kotani (Tohoku Univ.), Takashi Ito (Tokyo Inst. of Tech.)
----- Lunch ( 60 min. ) -----
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Fri, Oct 22 PM (13:10 - 16:50)
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(13) 13:10 - 13:40
Effect of gate insulator on the electrical properties of pentacene based organic field-effect transistors
Min Liao, Hiroshi Ishiwara, Shun-ichiro Ohmi (Tokyo Inst. of Tech.)
(14) 13:40 - 14:10
Integration of Novel Non-porous Low-k Dielectric Fluorocarbon into Advanced Cu Interconnects
Xun Gu, Takenao Nemoto, Yugo Tomita, Akinobu Teramoto, Shin-Ichiro Kuroki, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.)
(15) 14:10 - 14:40
Characterization of In-situ Formed HfN/HfSiON Gate Stacks by ECR Sputtering
Takahiro Sano, Shun-ichiro Ohmi (Tokyo Inst. of Tech.)
----- Break ( 10 min. ) -----
(16) 14:50 - 15:20
Crystallographic orientation dependence of compositional transition and valence band offset at SiO2/Si interface formed using oxygen radicals
Tomoyuki Suwa, Yuki Kumagai, Akinobu Teramoto, Tadahiro Ohmi, Takeo Hattori (Tohoku Univ.), Toyohiko Kinoshita, Takayuki Muro (JASRI)
(17) 15:20 - 15:50
Development of Automated System of Ultra-Accelerated Quantum Chemical Molecular Dynamics Method and Its Application to Silicon/Insulator Interface Formation Technologies
Hideyuki Tsuboi, Kenji Inaba, Mariko Ise, Yukie Hayashi, Yuka Suzuki, Hiromi Sato, Yukiko Obara, Ryo Nagumo, Ryuji Miura, Ai Suzuki, Nozomu Hatakeyama, Akira Endou, Hiromitsu Takaba, Momoji Kubo, Akira Miyamoto (Tohoku Univ.)
(18) 15:50 - 16:20
Dry, Wet and Radical Oxidation Simulation of Silicon Surface Using Automated System of Ultra-Accelerated Quantum Chemical Molecular Dynamics Method
Hideyuki Tsuboi, Mariko Ise, Yukie Hayashi, Yuka Suzuki, Hiromi Sato, Yukiko Obara, Kenji Inaba, Ryo Nagumo, Ryuji Miura, Ai Suzuki, Nozomu Hatakeyama, Akira Endou, Hiromitsu Takaba, Momoji Kubo, Akira Miyamoto (Tohoku Univ.)
(19) 16:20 - 16:50
Strain evaluation in Si at atomically flat SiO2/Si interface
Maki Hattori (Meiji Univ.), Daisuke Kosemura (Meiji Univ./JSPS), Munehisa Takei, Kohki Nagata, Hiroaki Akamatsu, Motohiro Tomita, Yuuki Mizukami, Yuuki Hashiguchi, Takuya Yamaguchi, Atsushi Ogura (Meiji Univ.), Tomoyuki Suwa, Akinobu Teramoto, Takeo Hattori, Tadahiro Ohmi (NICHe), Tomoyuki Koganezawa (JASRI)
# Information for speakers
General Talk will have 25 minutes for presentation and 5 minutes for discussion.
Invited Talk will have 50 minutes for presentation and 10 minutes for discussion.
=== Technical Committee on Silicon Device and Materials (SDM) ===
# FUTURE SCHEDULE:
Thu, Nov 11, 2010 - Fri, Nov 12, 2010: Kikai-Shinko-Kaikan Bldg. [Fri, Sep 10], Topics: Process, Device, Circuit Simulations, etc
Fri, Dec 17, 2010: Kyoto Univ. (Katsura) [Mon, Oct 18], Topics: Fabrication and Characterization of Si and Si-related Materials
# SECRETARY:
Hisahiro Ansai(Sony)
Tel 046-201-3297 Fax046-202-6572
E-mail: Hisahiro.Ansai＠jp.sony.com
Last modified: 2010-08-19 12:40:06
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