7月9日(水) 午前 プレナリセッション
10:00 - 10:40 |
| (1) |
10:00-10:40 |
［基調講演］III-V Semiconductor Epitaxial Nanowires and Their Applications |
○Takashi Fukui・Shinjiro Hara・Kenji Hiruma・Junichi Motohisa（Hokkaido Univ.） |
| |
10:40-10:50 |
休憩 （ 10分 ） |
7月9日(水) 午前 セッション 1: Compound Semiconductor Devices
10:50 - 12:20 |
| (1) |
10:50-11:15 |
［招待講演］Growth of InAs quantum dot and device application |
○Il-Ki Han（KIST） |
| (2) |
11:15-11:40 |
［招待講演］Narrow-gap III-V Semiconductor Technology: Lattice-Mismatched Growth and Epitaxial Lift-off for Heterogeneous Integration |
○Toshi-kazu Suzuki（JAIST） |
| (3) |
11:40-12:05 |
［招待講演］AlGaN/GaN-based Electron Devices with Low-temperature GaN Cap Layer |
○Tadayoshi Deguchi（New Japan Radio）・Takashi Egawa（Nagoya Inst. of Tech.） |
| (4) |
12:05-12:20 |
Properties of GaN MIS Capacitors Using Al2O3 as Gate Dielectric Deposited by Remote Plasma Atomic Layer Deposition |
○Hyeong-Seon Yun・Ka-Lam Kim・No-Won Kwak・Woo-Seok Lee・Sang-Hyun Jeong（Cheongju Univ.）・Ju-Ok Seo（Itswell）・Kwang-Ho Kim（Cheongju Univ.） |
| |
12:20-13:20 |
昼食 （ 60分 ） |
7月9日(水) 午後 セッション 2: Silicon Devices I
13:20 - 15:45 |
| (1) |
13:20-13:45 |
［招待講演］Guidelines for the Threshold Voltage Control of Metal/HfSiON system |
○Akira Nishiyama・Yoshinori Tsuchiya・Masahiko Yoshiki・Atsuhiro Kinoshita・Junji Koga・Masato Koyama（Toshiba） |
| (2) |
13:45-14:10 |
［招待講演］Precise Ion Implantation for Advanced MOS LSIs |
○Toshiharu Suzuki（SEN） |
| (3) |
14:10-14:35 |
［招待講演］Quantum Modeling of Carrier Transport through Silicon Nano-devices |
○Nobuya Mori・Hideki Minari（Osaka Univ.） |
| (4) |
14:35-15:00 |
［招待講演］High-K Dielectric for Charge Trap-type Flash Memory Application |
○Byung-Jin Cho（KAIST）・Wei He・Jing Pu（National Univ. of Singapore） |
| (5) |
15:00-15:15 |
Characteristics of Locally-Separated Channel FinFETs with Non-Overlapped Source/Drain to Gate for Sub-50 nm DRAM Cell Transistors |
○Han-A Jung・Ki-Heung Park（Kyungpook National Univ.）・Hyuck-In Kwon（Daegu Univ. Jillyang）・Jong-Ho Lee（Kyungpook National Univ.） |
| (6) |
15:15-15:30 |
A Material of Semiconductor Package with Low Dielectric Constant, Low Dielectric Loss and Flat Surface for High Frequency and Low Power Propagation |
○Hiroshi Imai（Tohoku Univ.）・Masahiko Sugimura・Masafumi Kawasaki（Zeon）・Akinobu Teramoto・Shigetoshi Sugawa・Tadahiro Ohmi（Tohoku Univ.） |
| (7) |
15:30-15:45 |
CMOS phase shift Oscillator Using the Conduction of Heat |
○Takaaki Hirai・Tetsuya Asai・Yoshihito Amemiya（Hokkaido univ.） |
| |
15:45-15:55 |
休憩 （ 10分 ） |
7月9日(水) 午後 セッション 3: Emerging Devices I
15:55 - 17:50 |
| (1) |
15:55-16:20 |
［招待講演］Characterization of Carbon Nanotube FETs by Electric Force Microscopy |
○Takashi Mizutani（Nagoya Univ.） |
| (2) |
16:20-16:45 |
［招待講演］Recent Progress on Nanoprobe and Nanoneedle |
○Masaki Tanemura・Masashi Kitazawa・Yoshitaka Sugita・Ako Miyawaki・Masaki Kutsuna・Yasuhiko Hayashi（Nagoya Inst. of Tech.）・Shu Ping Lau（Nanyang Tech. Univ.） |
| (3) |
16:45-17:10 |
［招待講演］Technical Issues and Applications of Printed Thin-Film Devices |
○Yongtaek Hong・Jaewook Jeong・Jinwoo Kim・Sanbwoo Kim・Minkyoo Kwon・Seungjun Chung（Seoul National Univ.） |
| (4) |
17:10-17:35 |
［招待講演］A Ta2O5 Solid-electrolyte Switch with Improved Reliability |
○Naoki Banno・Toshitsugu Sakamoto・Noriyuki Iguchi・Shinji Fujieda（NEC Corp.）・Kazuya Terabe・Tsuyoshi Hasegawa・Masakazu Aono（NIMS） |
| (5) |
17:35-17:50 |
Recessed Channel Dual Gate Single Electron Transistors (RCDG-SETs) for Room Temperature Operation |
○Sang Hyuk Park・Sangwoo Kang・Dong-Seup Lee・Jung Han Lee・Hong-Seon Yang・Kwon-Chil Kang・Joung-Eob Lee・Jong Duk Lee・Byung-Gook Park（Seoul National Univ.） |
7月10日(木) 午前 セッション 4A: Nonvolatile Memory
09:00 - 10:30 |
| (1) |
09:00-09:15 |
Formation of Pd Nanodots Induced by Remote Hydrogen Plasma and Its Application to Floating Gate MOS Memories |
○Kazuhiro Shimanoe・Katsunori Makihara・Mitsuhisa Ikeda・Seiichi Miyazaki（Hiroshima Univ.） |
| (2) |
09:15-09:30 |
Simulation of Retention Characteristics in Double-Gate Structure Multi-bit SONOS Flash Memories |
○Doo-Hyun Kim・Il Han Park・Byung-Gook Park（Seoul National Univ.） |
| (3) |
09:30-09:45 |
3-dimensional Terraced NAND(3D TNAND) Flash Memory |
○Yoon Kim・Gil-Seong Lee・Jong Duk Lee・Hyungcheol Shin・Byung-Gook Park（Seoul National Univ.） |
| (4) |
09:45-10:00 |
Design of Unique two-bit/cell SONOS Flash Memory Device Utilizing an Advanced Saddle Structure |
○Sang-Su Park・Se Woong Oh・Kyeong Rok Kim・Hyun Joo Kim・Tae Whan Kim・Kae Dal Kwack（Hanyang Univ.） |
| (5) |
10:00-10:15 |
Using shielding metal for elimination of floating gate coupling effect |
○Gil-Sung Lee（Seoul National Univ.） |
| (6) |
10:15-10:30 |
Design of Vertical Nonvolatile Memory Device Considering Gate-Induced Barrier Lowering(GIBL) |
○Seongjae Cho・Il Han Park・Jung Hoon Lee・Gil Sung Lee・Jong Duk Lee・Hyungcheol Shin・Byung-Gook Park（Seoul National Univ.） |
| |
10:30-10:40 |
休憩 （ 10分 ） |
7月10日(木) 午前 セッション 5A: Silicon Devices II
10:40 - 11:55 |
| (1) |
10:40-10:55 |
Study of Self-Heating Phenomena in Si Nano Wire MOS Transistor |
○Tetsuo Endoh・Kousuke Tanaka・Yuto Norifusa（Tohoku Univ.） |
| (2) |
10:55-11:10 |
Scalability of Vertical MOSFETs in Sub-10nm generation and its Mechanism |
○Yuto Norifusa・Tetsuo Endoh（Tohoku Univ.） |
| (3) |
11:10-11:25 |
Current Transport Characteristics for Organic Nonvolatile Memories |
○Woo-Sik Nam・Gon-Sub Lee・Sung-Ho Seo・Young-Hwan Oh・Jae-Gun Park（Hanyang Univ.） |
| (4) |
11:25-11:40 |
Observation of hexagonal nuclei in the melt-quenched Ge2Sb2Te5 thin films |
○Min-Soo Youm（KIST） |
| (5) |
11:40-11:55 |
Microstructural and electrical characteristics of Ge1Te1 alloy |
○Yong-Tae Kim（KIST） |
7月10日(木) 午前 セッション 4B: Emerging Devices II
09:00 - 10:15 |
| (1) |
09:00-09:15 |
Single-Electron-Resolution Electrometer Based on Field-Effect Transistor |
○Katsuhiko Nishiguchi・Charlie Koechlin・Yukinori Ono・Akira Fujiwara・Hiroshi Inokawa・Hiroshi Yamaguchi（NTT） |
| (2) |
09:15-09:30 |
Charge Injection Path of Bottom-Contact Organic Thin-Film Transistors |
○Yoo Chul Kim・Keum-Dong Jung・Jong Duk Lee・Byung-Gook Park（Seoul National Univ.） |
| (3) |
09:30-09:45 |
Self-Aligned Conducting Polymer Patterns Coated with Carbon Nanotube Using Soft Lithography for Transparent Flexible Electrode of OTFT |
○Jin-Woo Huh・Jin-Woo Huh・Jin-Wook Jeong・Ho-Gyu Yoon（Korea Univ.）・Sang Ho Kim（LG Chem.）・Byeong-Kwon Ju（Korea Univ.） |
| (4) |
09:45-10:00 |
Self-Assembled Carbon Nanotube Network Films Field Effect Transistor for Biosensor Application |
○Sunhaera Shin・Youn-Kyoung Baek・Yang-Kyu Choi・Hee-Tae Jung（KAIST） |
| (5) |
10:00-10:15 |
2-bit Arithmetic Logic Unit Utilizing Hexagonal BDD Architecture for Implemention of Nanoprocessor on GaAs Nanowire Network |
○Hong-Quan Zhao（Hokkaido Univ.）・Seiya Kasai（Hokkaido Univ./JST）・Tamotsu Hashizume（Hokkaido Univ.） |
| |
10:15-10:25 |
休憩 （ 10分 ） |
7月10日(木) 午前 セッション 5B: Emerging Devices III
10:25 - 11:55 |
| (1) |
10:25-10:40 |
Fabrication of Silicon Nanowire Devices using AC Dielectrophoresis |
○Su-Heon Hong・Myung-Gil Kang（Korea Univ.）・Dong-Mok Whang（Sungkyunkwan Univ.）・Sung-Woo Hwang（Korea Univ.） |
| (2) |
10:40-10:55 |
A Study on Poly(3,4-ethylenedioxythiophene):Poly(styrene sulfonate) (PEDOT:PSS) Films for The Microbolometer Applications |
○Hyeok Jun Son・Il Woong Kwon（KAIST）・Ho Jun You（ETRI）・Yong Soo Lee・Hee Chul Lee（KAIST） |
| (3) |
10:55-11:10 |
Electrical Detection of Si-Tagged Proteins on HF-last Si(100) and Thermally Grown SiO2 Surfaces |
○S. Mahboob・Katsunori Makihara・Hirotaka Kaku・Mitsuhisa Ikeda・Seiichiro Higashi・Seiichi Miyazaki・Akio Kuroda（Hiroshima Univ.） |
| (4) |
11:10-11:25 |
Fabrication of methanol concentration sensor by using Pt dot catalyst electrode |
○Seong-Il Kim（KIST） |
| (5) |
11:25-11:40 |
Fabrication and characterization of silicon nanowire-based biosensor |
○Young-Soo Sohn（KIST） |
| (6) |
11:40-11:55 |
An Insect Vision-based Single-electron Circuit Performing Motion Detection |
○Andrew Kilinga Kikombo・Tetsuya Asai・Yoshihito Amemiya（Hokkaido univ.） |
7月11日(金) 午前 セッション 6: Power and High-Frequency Devices I
09:00 - 10:40 |
| (1) |
09:00-09:25 |
［招待講演］SiC Power Transistor and Its Application for DC/DC Converter |
○Makoto Kitabatake（Matsushita Electric Industrial） |
| (2) |
09:25-09:50 |
［招待講演］Recent Advances on GaN Vertical Power Device |
○Tetsu Kachi（Toyota Central R&D Labs., Inc.） |
| (3) |
09:50-10:15 |
［招待講演］Millimeter-wave MMIC Technologies for F-band Application |
○Toshihiko Kosugi・Akihiko Hirata・Koichi Murata・Naoya Kukutsu・Yuichi Kado・Takatomo Enoki（NTT） |
| (4) |
10:15-10:40 |
［招待講演］Emission of Terahertz Radiation from InGaP/InGaAs/GaAs Grating-Bicoupled Plasmon-Resonant Nano-Transistors |
○Taiichi Otsuji（Tohoku Univ.） |
| |
10:40-10:50 |
休憩 （ 10分 ） |
7月11日(金) 午前 セッション 7A: Power and High-Frequency Devices II
10:50 - 12:35 |
| (1) |
10:50-11:05 |
High Breakdown Voltage of 10400V in AlGaN/GaN HFET with AlN Passivation |
○Daisuke Shibata・Hisayoshi Matsuo（Matsushita Electric Industrial）・Shuichi Nagai・Ming Li（Panasonic Boston Lab）・Naohiro Tsurumi・Hidetoshi Ishida・Manabu Yanagihara・Yasuhiro Uemoto・Tetsuzo Ueda・Tsuyoshi Tanaka・Daisuke Ueda（Matsushita Electric Industrial） |
| (2) |
11:05-11:20 |
Improvement of the Leakage by Second Thermal Oxidation Process Power Trench Gate MOSFET |
○Chien-Nan Liao（National Central Univ.）・Jhih-Chao Huang・Feng-Tso Chien（Feng Chia Univ.）・Chii-Wen Chen（Minghsin Univ. of Sci. and Tech.）・Yao-Tsung Tsai（National Central Univ.） |
| (3) |
11:20-11:35 |
The Analysis of the Floating Field Limiting Ring and Field Plate |
○Chien-Nan Liao（National Central Univ.）・Jhih-Chao Huang・Feng-Tso Chien・Ching-Hwa Cheng（Feng Chia Univ.）・Yao-Tsung Tsai（National Central Univ.） |
| (4) |
11:35-11:50 |
A Latchup-Free Power-Rail ESD Clamp Circuit with Stacked-Bipolar Devices in a High-Voltage Technology |
○Jae-Young Park・Jong-Kyu Song・Chang-Soo Jang・Joon-Tae Jang・San-Hong Kim・Sung-Ki Kim・Taek-Soo Kim（Dongbu HiTek） |
| (5) |
11:50-12:05 |
Three-Dimensional (3D) Integration of A Log Spiral Antenna for High-Directivity Plasmon-Resonant Terahertz Emitter |
○HyunChul Kang・Takuya Nishimura・Taiichi Otsuji（Tohoku Univ.）・Naoya Watanabe・Tanemasa Asano（Kyushu Univ.） |
| (6) |
12:05-12:20 |
Spectral Narrowing Effect of a Novel Super-Grating Dual-Gate Structure for Plasmon-Resonant Terahertz Emitter |
○Takuya Nishimura・Nobuhiro Magome・HyunChul Kang・Taiichi Otsuji（Tohoku Univ.） |
| (7) |
12:20-12:35 |
Performance Prediction of Deep Sub-nH Inductors for Millimeter-Wave Applications |
○Sooyeon Kim・Yongho Oh・Jae-Sung Rieh（Korea Univ.） |
| |
12:35-13:35 |
昼食 （ 60分 ） |
7月11日(金) 午前 セッション 7B: Si Devices III
10:50 - 12:35 |
| (1) |
10:50-11:05 |
Novel Concept Dynamic Feedback MCML Technique for High-Speed and High-Gain MCML type D-Flip Flop |
○Tetsuo Endoh・Masashi Kamiyanagi（Tohoku Univ.） |
| (2) |
11:05-11:20 |
Impact of 180nm Current Controlled MCML for Realizing Stable Circuit Operations under Threshold Voltage Fluctuations |
○Masashi Kamiyanagi・Yuto Norifusa・Tetsuo Endoh（Tohoku Univ.） |
| (3) |
11:20-11:35 |
Implementation of Channel Thermal Noise Model in CMOS RFIC Design |
○Jongwook Jeon・Ickhyun Song・Hyungcheol Shin（Seoul National Univ.） |
| (4) |
11:35-11:50 |
CMOS Digitally Controlled Programmable Gain Amplifier (PGA) with DC Offset Cancellation |
○Kyunghoon Kim・Jinwook Burn（Sogang Univ.） |
| (5) |
11:50-12:05 |
Chip Design of a Successive Approximation A/D Converter for Structure Monitoring System |
○Jae-Woon Kim・Jinwook Burm（Sogang Univ.） |
| (6) |
12:05-12:20 |
Chip Design of Structure Monitoring Sensor Driving IC for Telemetrics Application |
○Jun-Gyu Lee・Bae-Ki Jung・Jinwook Burm（Sogang Univ.） |
| (7) |
12:20-12:35 |
The Data Analysis Technique of the Atomic Force Microscopy for the Atomically Flat Silicon Surface |
○Masahiro Konda・Akinobu Teramoto・Tomoyuki Suwa・Rihito Kuroda・Tadahiro Ohmi（Tohoku Univ.） |
| |
12:35-13:35 |
昼食 （ 60分 ） |
7月11日(金) 午後 セッション 8A: Si Devices IV
13:35 - 15:05 |
| (1) |
13:35-13:50 |
Electrical Properties of Highly Crystallized Ge:H Thin Films Grown from VHF Inductively-Coupled Plasma of H2-diluted GeH4 |
○Hirotaka Kaku・Katsunori Makihara・Mitsuhisa Ikeda・Seiichiro Higashi・Seiichi Miyazaki（Hiroshima Univ.） |
| (2) |
13:50-14:05 |
Study on Gate Around Transistor (GAT) Layout for Radiation Hardness |
○Min-su Lee・Young-Soo Lee・Chul-Bum Kim・Young-Ho Kim（KAIST）・Byoung-Gon Yu・Hee Chul Lee（ETRI） |
| (3) |
14:05-14:20 |
Low Power Pixel-Level ADC for a Micro-Bolometer |
○Dong-Heon Ha・Chi Ho Hwang（KAIST）・Woo Seok Yang（ETRI）・Yong Soo Lee・Hee Chul Lee（KAIST） |
| (4) |
14:20-14:35 |
A 425 MHz Narrow Channel Spacing Frequency Synthesizer |
○Younwoong Chung・Junan Lee・Jinwook Burm（Sogang Univ） |
| (5) |
14:35-14:50 |
A Novel 800mV Reference Current Source Circuit for Low-Power Low-Voltge Mixed-Mode Systems |
○Oh Jun Kwon・Kae DalKwack（Hanyang Univ.） |
| (6) |
14:50-15:05 |
A Novel 900mV Single-Stage Class-AB Amplifier for a Σ-Δ Modulator with the Switched-OPamp Technique |
○Oh Jun Kwon・Kae Dal Kwack（Hanyang Univ.） |
7月11日(金) 午後 セッション 9A: High-Frequency, Photonic and Sensing Devices
15:05 - 16:05 |
| (1) |
15:05-15:20 |
24 GHz Low Noise Amplifier Design in 65 nm CMOS Technology with Inter-Stage Matching Optimization |
○Ickhyun Song・Hakchul Jung・Hee-Sauk Jhon・Minsuk Koo・Hyungcheol Shin（Seoul National Univ.） |
| (2) |
15:20-15:35 |
Reduced Branch-Line Coupler Using Eight Two-Step Stubs for W-Band Application of MMIC |
○Tae-Jong Baek・Sang-Jin Lee・Min Han・Jin-Koo Rhee（Dongguk Univ.） |
| (3) |
15:35-15:50 |
Design Consideration of High Power LED Arrays for Backlight Unit Applications |
○Bong-Ryeol Park・Ho-Young Cha（Hongik Univ.） |
| (4) |
15:50-16:05 |
Electrochemical Formation and Functionalization of InP Porous Nanostructures and Their Application to Chemical Sensors |
○Akinori Mizohata・Naoki Yoshizawa・Taketomo Sato・Tamotsu Hashizume（Hokkaido Univ.） |
7月11日(金) 午後 セッション 8B: Compound Semiconductor Device Process Technology
13:35 - 15:50 |
| (1) |
13:35-13:50 |
W-band Single Balanced Mixer using High Performance Dot Schottky Diode |
○Sang-Jin Lee・Jung-Hun Oh・Tae-Jong Baek・Mun-Kyo Lee・Dong-Sic Ko・Du-Hyun Ko・Hyun-Chang Park・Jin-Koo Rhee（Dongguk Univ.） |
| (2) |
13:50-14:05 |
SiC MESFET Power Amplifier for 3.6 GHz-3.8 GHz WiMAX Application |
○Jae-Kwon Kim・Kyunghwan Kim・Jinwook Burn（Sogang Univ.） |
| (3) |
14:05-14:20 |
Heat Dissipation and the Nature of Negative-Differential-Resistance for GaAs Gunn Diodes |
○M. R. Kim・S. D. Lee・J. S. Lee・N. S. Kwak・S. D. Kim・J. K. Rhee（Dongguk Univ.）・W. J. Kim（ADD） |
| (4) |
14:20-14:35 |
AlGaN/GaN-based Millimeter Wave Monolithic ICs with Laser-Drilled Via-holes Through Sapphire |
○Tomohiro Murata・Masayuki Kuroda（Matsushita Electric Industrial）・Shuichi Nagai（Panasonic Boston Lab.）・Masaaki Nishijima・Hidetoshi Ishida・Manabu Yanagihara・Tetsuzo Ueda・Hiroyuki Sakai・Tsuyoshi Tanaka（Matsushita Electric Industrial）・Ming Li（Panasonic Boston Lab.） |
| (5) |
14:35-14:50 |
Simulation of Tunneling Contact Resistivity in Non-polar AlGaN/GaN Heterostructures |
○Hironari Chikaoka・Youichi Takakuwa・Kenji Shiojima・Masaaki Kuzuhara（Univ. of Fukui） |
| (6) |
14:50-15:05 |
AlGaN/GaN-HEMTs on SiC with SiN Passivation Film Grown by Thermal CVD |
○Hideyuki Okita・Shinichi Hoshi・Toshiharu Marui・Masanori Itoh・Fumihiko Toda・Yoshiaki Morino・Isao Tamai・Yoshiaki Sano・Shohei Seki（OKI Electric Industry） |
| (7) |
15:05-15:20 |
Characterization of GaN Surfaces After High-Temperature Annealing and Carbon Diffusion |
○Takeshi Kimura・Tamotsu Hashizume（Hokkaido Univ.） |
| (8) |
15:20-15:35 |
Characterization of Ni/i-AlGaN/GaN Schottky Samples Fabricated after H3PO4-Etching |
○Takayuki Sawada・Yuta Kaizuka・Kensuke Takahashi・Kazuaki Imai（Hokkaido Inst. of Tech.） |
| (9) |
15:35-15:50 |
Observation of Regions with Low Schottky Barrier Height in 4H-SiC by the Electrochemical Deposition |
○Masashi Kato・Hidenori Ono・Kazuya Ogawa・Masaya Ichimura（Nagoya Inst. of Tech.） |
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