Mon, Feb 22 PM
13:00 - 14:40 |
| (1) |
13:00-13:25 |
Neuromorphic adiabatic quantum computation based on phosphorus nuclear spin array in Si |
Mitsunaga Kinjo (Univ. of the Ryukyus), Shigeo Sato (Tohoku Univ.) |
| (2) |
13:25-13:50 |
Seebeck coefficient in heavily-doped SOI layers |
Hiroya Ikeda, Faiz Salleh (Shizuoka Univ.) |
| (3) |
13:50-14:15 |
Stochastic Resonance Devices Based on Carbon Nanotube Field-Effect Transistors |
Yasufumi Hakamata, Yasuhide Ohno, Kenzo Maehashi (ISIR Osaka Univ.), Seiya Kasai (RCIQE Hokkaido Univ.), Koichi Inoue, Kazuhiko Matsumoto (ISIR Osaka Univ.) |
| (4) |
14:15-14:40 |
Analysis on Stochastic Resonance Behavior of Single Electron in Quantum Dots |
Seiya Kasai (Hokkaido Univ/JST), Yuta Shiratori, Kensuke Miura (Hokkaido Univ.) |
| |
14:40-14:50 |
Break ( 10 min. ) |
Mon, Feb 22 PM
14:50 - 16:55 |
| (5) |
14:50-15:15 |
MOVPE Growth of InGaN/GaN MQW on a Polar, Semi-polar, and Non-polar GaN Stripes by Selective MOVPE |
Tomoyuki Tanikawa, Yoshio Honda, Masahito Yamaguchi (Nagoya Univ.) |
| (6) |
15:15-15:40 |
Formation of Si Nanocrystals in SiOx Films Induced by Thermal Plasma Jet Millisecond Annealing and Its Application to Floating Gate Memory |
Tatsuya Okada (Univ. of the Ryukyus), Seiichiro Higashi, Katsunori Makihara, Yasuo Hiroshige, Seiichi Miyazaki (Hiroshima Univ.) |
| (7) |
15:40-16:05 |
Integration of Single-Electron Transistors Using Field-Emission-Induced Electromigration |
Shunsuke Ueno, Yusuke Tomoda, Watari Kume, Michinobu Hanada, Kazutoshi Takiya, Jun-ichi Shirakashi (Tokyo Univ. of Agr. & Tech.) |
| (8) |
16:05-16:30 |
Fabrication of Planar-Type Ferromagnetic Tunnel Junctions Using Field-Emission-Induced Electromigration |
Kazutoshi Takiya, Yusuke Tomoda, Takato Watanabe, Watari Kume, Shunsuke Ueno, Jun-ichi Shirakashi (Tokyo Univ. of Agr. & Tech) |
| (9) |
16:30-16:55 |
Observation of enhanced MR effects in a single electron transistor with ferromagnetic lead electrodes |
Nobuyuki Tamura, Kento Kikuchi, Masataka Moriya, Tadayuki Kobayashi, Hiroshi Shimada, Yoshinao Mizugaki (Univ. of Electro-Comm.) |
Tue, Feb 23 AM
09:30 - 11:25 |
| (10) |
09:30-10:10 |
[Invited Talk]
Effect of interface properties on characteristics of carbon nanotube FETs |
Yutaka Ohno, Naoki Moriyama, Takamitsu Kitamura, Kosuke Suzuki, Shigeru Kishimoto, Takashi Mizutani (Nagoya Univ.) |
| (11) |
10:10-10:35 |
CMOS inverters based on carbon nanotube field-effect transistors with SiNx passivation films |
Takaomi Kishimoto, Yasuhide Ohno, Kenzo Maehashi, Koichi Inoue, Kazuhiko Matsumoto (ISIR, Osaka Univ.) |
| (12) |
10:35-11:00 |
Fabrication of nanowire-based sequential circuits using gate-controlled GaAs three-branch nanowire junctions |
Hiromu Shibata, Daisuke Nakata, Yuta Shiratori (Hokkaido Univ), Seiya Kasai (Hokkaido Univ/JST) |
| (13) |
11:00-11:25 |
Compact Reconfigurable BDD Logic Circuits utilizing GaAs Nanowire Network |
Yuta Shiratori, Kensuke Miura (Hokkaido Univ.), Seiya Kasai (Hokkaido Univ./JST) |
| |
11:25-11:35 |
Break ( 10 min. ) |
Tue, Feb 23 AM
11:35 - 12:50 |
| (14) |
11:35-12:00 |
Detectors of Terahertz and Infrared Radiation Based on p-i-n Single- and Multiple Graphene Layer Structures |
Victor Ryzhii, Maxim Ryzhii (Univ. of Aizu), Taiichi Otsuji (Tohoku Univ.), Vladimir Mitin (Buffalo Univ.) |
| (15) |
12:00-12:25 |
Electrical Property of CNT/cellulose Composite Paper |
Tomo Tanaka, Eiichi Sano (Hokkaido Univ.), Kousuke Akiyama, Masanori Imai (Tokushu Paper) |
| (16) |
12:25-12:50 |
Nonvolatile memory based on carbon nanotube field-effect transistors |
Kenzo Maehashi, Takahiro Ohori, Satoshi Nagaso, Koichi Inoue, Kazuhiko Matsumoto (Osaka Univ.) |
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