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=============================================== Technical Committee on Silicon Device and Materials (SDM) Chair: Yasuo Nara Vice Chair: Yuzou Oono (Univ. of Tsukuba) Secretary: Yoshitaka Sasago (Hitachi) Assistant: Rihito Kuroda (Tohoku Univ.) DATE: Thu, Nov 14, 2013 10:00 - 16:40 Fri, Nov 15, 2013 10:00 - 15:50 PLACE: (http://www.jspmi.or.jp/kaigishitsu/) TOPICS: Process, Device, Circuit Simulations, etc. ---------------------------------------- Thu, Nov 14 AM (10:00 - 11:35) ---------------------------------------- ----- Opening Address ( 5 min. ) ----- (1) 10:05 - 10:50 [Invited Talk] 2013 SISPAD Review -- transport and reliability -- Nobuya Mori (Osaka Univ.) (2) 10:50 - 11:35 [Invited Talk] 2013 SISPAD Review -- Workshop 1 -- Masashi Uematsu (Keio Univ.) ----- Lunch ( 85 min. ) ----- ---------------------------------------- Thu, Nov 14 PM (13:00 - 14:40) ---------------------------------------- (3) 13:00 - 13:50 [Invited Talk] Role of Computational Sciences in Design of Modern Electron Devices Kenji Shiraishi (Nagoya Univ.) (4) 13:50 - 14:15 Atomistic Study of Sulfur Diffusion and S2 Formation in Silicon during Low-temperature Rapid Thermal Annealing Takahisa Kanemura, Koichi Kato, Hiroyoshi Tanimoto, Nobutoshi Aoki, Yoshiaki Toyoshima (Toshiba) (5) 14:15 - 14:40 The effect of incorporated elements in nitrogen vacancies on electron trap level in silicon nitride Kenichiro Sonoda, Eiji Tsukuda, Motoaki Tanizawa, Kiyoshi Ishikawa, Yasuo Yamaguchi (Renesas Electronics) ----- Break ( 20 min. ) ----- ---------------------------------------- Thu, Nov 14 PM (15:00 - 16:40) ---------------------------------------- (6) 15:00 - 15:50 [Invited Talk] Analysis of Low-Frequency Noise in Silicon Tri-Gate Nanowire Transistors Masumi Saitoh, Kensuke Ota, Chika Tanaka, Toshinori Numata (Toshiba) (7) 15:50 - 16:40 [Invited Talk] Advanced MOSFET simulations using a quantum energy trasport model Shohiro Sho, Shinji Odanaka (Osaka Univ.) ---------------------------------------- Fri, Nov 15 AM (10:00 - 11:40) ---------------------------------------- (8) 10:00 - 10:25 Analytical drain current and threshold voltage model and device design of short-channel Si nanowire transistors Chika Tanaka, Daisuke Hagishima (Toshiba), Ken Uchida (Keio Univ.), Toshinori Numata (Toshiba) (9) 10:25 - 10:50 Analytic Compact Model of Ballistic and Quasi-ballistic Cylindrical Gate-All-Around MOSFET Incorporating Drain-Induced Barrier Lowering Effect He Cheng (Nagoya Univ.), Shigeyasu Uno (Ritsumeikan Univ.), Kazuo Nakazato (Nagoya Univ.) (10) 10:50 - 11:15 Physical Model and Simulations on Resistive Transition of Pt/TiO2/Pt Capacitor Yasuhisa Omura, Yusuke Kondo (Kansai Univ.) (11) 11:15 - 11:40 Theoretical Modeling of Double-Gate Lateral Tunnel FET Yasuhisa Omura, Daiki Sato, Shingo Sato (Kansai Univ.), Abhijit Mallik (Univ. of Calcuitta) ----- Lunch ( 80 min. ) ----- ---------------------------------------- Fri, Nov 15 PM (13:00 - 14:15) ---------------------------------------- (12) 13:00 - 13:25 NEGF Simulation for Studying Effect of Screening and Impurity Scattering in Junctionless Transistors Akiko Ueda (Univ. of Tsukuba), Mathieu Luisier (ETH Zurich), Katsuhisa Yoshida, Syuta Honda, Nobuyuki Sano (Univ. of Tsukuba) (13) 13:25 - 13:50 Quantum transport simulation of ultrasmall III-V MOSFETs using Wigner Monte Carlo approach Masaki Ohmori, Shunsuke Koba, Yosuke Maegawa (Kobe Univ.), Hideaki Tsuchiya (Kobe Univ./JST), Yoshinari Kamakura, Nobuya Mori (Osaka Univ./JST), Matsuto Ogawa (Kobe Univ.) (14) 13:50 - 14:15 Analysis of Thermoelectric Performance in Silicon Nanostructures Based on Monte Carlo Method Indra Nur Adisusilo, Kentaro Kukita (Osaka Univ.), Yoshinari Kamakura (Osaka Univ./JST CREST) ----- Break ( 20 min. ) ----- ---------------------------------------- Fri, Nov 15 PM (14:35 - 15:50) ---------------------------------------- (15) 14:35 - 15:00 Possible Unified Model for the Hooge Parameter in Inversion-Layer-Channel MOSFET Yasuhisa Omura (Kansai Univ.) (16) 15:00 - 15:25 Impacts of Channel Doping on Random Telegraph Signal Noise and Successful Noise Suppression by Mobility Enhancement Jiezhi Chen, Yusuke Higashi, Izumi Hirano, Yuichiro Mitani (Toshiba) (17) 15:25 - 15:50 Reconsideration of Effective MOSFET Channel Length Kazuo Terada, Kazuhiko Sanai, Katsuhiro Tsuji (Hiroshima City Univ.) # Information for speakers General Talk will have 20 minutes for presentation and 5 minutes for discussion. # CONFERENCE SPONSORS: - This conference is co-sponsored by The Japan Society of Applied Physics. === Technical Committee on Silicon Device and Materials (SDM) === # SECRETARY: Tatsuya Kunikiyo (Renesas) TEL: 072-787-2408 FAX: 072-789-3438 E-mail:         zn    s Last modified: 2013-09-17 12:44:12 |
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