Thu, Nov 14 AM
10:00 - 11:35 |
| |
10:00-10:05 |
Opening Address ( 5 min. ) |
| (1) |
10:05-10:50 |
[Invited Talk]
2013 SISPAD Review
-- transport and reliability -- |
Nobuya Mori (Osaka Univ.) |
| (2) |
10:50-11:35 |
[Invited Talk]
2013 SISPAD Review
-- Workshop 1 -- |
Masashi Uematsu (Keio Univ.) |
| |
11:35-13:00 |
Lunch ( 85 min. ) |
Thu, Nov 14 PM
13:00 - 14:40 |
| (3) |
13:00-13:50 |
[Invited Talk]
Role of Computational Sciences in Design of Modern Electron Devices |
Kenji Shiraishi (Nagoya Univ.) |
| (4) |
13:50-14:15 |
Atomistic Study of Sulfur Diffusion and S2 Formation in Silicon during Low-temperature Rapid Thermal Annealing |
Takahisa Kanemura, Koichi Kato, Hiroyoshi Tanimoto, Nobutoshi Aoki, Yoshiaki Toyoshima (Toshiba) |
| (5) |
14:15-14:40 |
The effect of incorporated elements in nitrogen vacancies on electron trap level in silicon nitride |
Kenichiro Sonoda, Eiji Tsukuda, Motoaki Tanizawa, Kiyoshi Ishikawa, Yasuo Yamaguchi (Renesas Electronics) |
| |
14:40-15:00 |
Break ( 20 min. ) |
Thu, Nov 14 PM
15:00 - 16:40 |
| (6) |
15:00-15:50 |
[Invited Talk]
Analysis of Low-Frequency Noise in Silicon Tri-Gate Nanowire Transistors |
Masumi Saitoh, Kensuke Ota, Chika Tanaka, Toshinori Numata (Toshiba) |
| (7) |
15:50-16:40 |
[Invited Talk]
Advanced MOSFET simulations using a quantum energy trasport model |
Shohiro Sho, Shinji Odanaka (Osaka Univ.) |
Fri, Nov 15 AM
10:00 - 11:40 |
| (8) |
10:00-10:25 |
Analytical drain current and threshold voltage model and device design of short-channel Si nanowire transistors |
Chika Tanaka, Daisuke Hagishima (Toshiba), Ken Uchida (Keio Univ.), Toshinori Numata (Toshiba) |
| (9) |
10:25-10:50 |
Analytic Compact Model of Ballistic and Quasi-ballistic Cylindrical Gate-All-Around MOSFET Incorporating Drain-Induced Barrier Lowering Effect |
He Cheng (Nagoya Univ.), Shigeyasu Uno (Ritsumeikan Univ.), Kazuo Nakazato (Nagoya Univ.) |
| (10) |
10:50-11:15 |
Physical Model and Simulations on Resistive Transition of Pt/TiO2/Pt Capacitor |
Yasuhisa Omura, Yusuke Kondo (Kansai Univ.) |
| (11) |
11:15-11:40 |
Theoretical Modeling of Double-Gate Lateral Tunnel FET |
Yasuhisa Omura, Daiki Sato, Shingo Sato (Kansai Univ.), Abhijit Mallik (Univ. of Calcuitta) |
| |
11:40-13:00 |
Lunch ( 80 min. ) |
Fri, Nov 15 PM
13:00 - 14:15 |
| (12) |
13:00-13:25 |
NEGF Simulation for Studying Effect of Screening and Impurity Scattering in Junctionless Transistors |
Akiko Ueda (Univ. of Tsukuba), Mathieu Luisier (ETH Zurich), Katsuhisa Yoshida, Syuta Honda, Nobuyuki Sano (Univ. of Tsukuba) |
| (13) |
13:25-13:50 |
Quantum transport simulation of ultrasmall III-V MOSFETs using Wigner Monte Carlo approach |
Masaki Ohmori, Shunsuke Koba, Yosuke Maegawa (Kobe Univ.), Hideaki Tsuchiya (Kobe Univ./JST), Yoshinari Kamakura, Nobuya Mori (Osaka Univ./JST), Matsuto Ogawa (Kobe Univ.) |
| (14) |
13:50-14:15 |
Analysis of Thermoelectric Performance in Silicon Nanostructures Based on Monte Carlo Method |
Indra Nur Adisusilo, Kentaro Kukita (Osaka Univ.), Yoshinari Kamakura (Osaka Univ./JST CREST) |
| |
14:15-14:35 |
Break ( 20 min. ) |
Fri, Nov 15 PM
14:35 - 15:50 |
| (15) |
14:35-15:00 |
Possible Unified Model for the Hooge Parameter in Inversion-Layer-Channel MOSFET |
Yasuhisa Omura (Kansai Univ.) |
| (16) |
15:00-15:25 |
Impacts of Channel Doping on Random Telegraph Signal Noise and Successful Noise Suppression by Mobility Enhancement |
Jiezhi Chen, Yusuke Higashi, Izumi Hirano, Yuichiro Mitani (Toshiba) |
| (17) |
15:25-15:50 |
Reconsideration of Effective MOSFET Channel Length |
Kazuo Terada, Kazuhiko Sanai, Katsuhiro Tsuji (Hiroshima City Univ.) |
: 
s