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Technical Committee on Silicon Device and Materials (SDM) [schedule] [select]
Chair Yasuo Nara (Fujitsu Semiconductor)
Vice Chair Yuzou Oono (Univ. of Tsukuba)
Secretary Shintaro Nomura (Univ. of Tsukuba), Yoshitaka Sasago (Hitachi)

Conference Date Mon, Feb 4, 2013 10:00 - 16:50
Topics  
Conference Place 機械振興会館 地下3階 研修1号室 
Transportation Guide http://www.jspmi.or.jp/about/access.html
Sponsors This conference is co-sponsored by The Japan Society of Applied Physics.

Mon, Feb 4 AM 
10:00 - 16:50
  10:00-10:05 Opening Address ( 5 min. )
(1) 10:05-10:45 Improved Thermal Conductivity by Vertical Graphene Contact Formation for Thermal TSV Akio Kawabata, Mizuhisa Nihei, Tomo Murakam, Motonobu Sato, Naoki Yokoyama (AIST)
(2) 10:45-11:25 CuSn/InAu microbump induced local deformation and mechanical stress in high-density 3D-LSI Murugesan Murugesan, Mitsumasa Koyanagi (Tohoku Univ.)
(3) 11:25-12:05 * Takashi Kurusu, Hiroyoshi Tanimoto, Makoto Wada, Atsunobu Isobayashi, Akihiro Kajita, Nobutoshi Aoki, Yoshiaki Toyoshima (Toshiba)
  12:05-13:10 Lunch Break ( 65 min. )
(4) 13:10-13:50 Smart interconnect technology using atom switch for low-power programmable Logic Munehiro Tada, Toshitsugu Sakamoto, Makoto Miyamura, Naoki Banno, Koichiro Okamoto, Noriyuki Iguchi, Hiromitsu Hada (LEAP)
(5) 13:50-14:30 Nano-ordered Evaluation for Local Distribution of Adhesion Strength Between Cu/Dielectric in LSI Circuit S.Kamiya, Hisashi Sato (Nagoya Inst. of Tech.), Masaki Omiya (Keio Univ.), Nobuyuki Shishido, Kozo Koiwa, Masahiro Nishida (Nagoya Inst. of Tech.), Tomoji Nakamura, Takashi Suzuki (Fujitsu Labs), Takeshi Nokuo, Toshiaki Suzuki (JEOL)
(6) 14:30-15:10 Wafer-level Chip Scale Package for White LED with High Thermal Dissipation Yosuke Akimoto, Akihiro Kojima, Miyoko Shimada, Hideyuki Tomizawa, Hideto Furuyama, Susumu Obata, Kazuhito Higuchi, Yoshiaki Sugizaki, Hideki Shibata (Toshiba)
  15:10-15:25 Break ( 15 min. )
(7) 15:25-16:05 High Reliability Technology of Fine Pitch Re-wiring for High Density Chip Package
-- Cu Re-wiring Covering with Metal-Cap Barrier Technology --
Tsuyoshi Kanki, Junya Ikeda, Shoichi Suda, Yasushi Kobayashi, Yoshihiro Nakata, Tomoji Nakamura (Fujitsu Labs)
(8) 16:05-16:45 Novel Seed Layer Formation Using Electroless Copper Deposition For High Aspect Ratio TSV Fumihiro Inoue, Shoso Shingubara (Kansai Univ.), Harold Philipsen (IMEC)
  16:45-16:50 Closing Address ( 5 min. )

Announcement for Speakers
General TalkEach speech will have 30 minutes for presentation and 10 minutes for discussion.

Contact Address and Latest Schedule Information
SDM Technical Committee on Silicon Device and Materials (SDM)   [Latest Schedule]
Contact Address Yukinori Ono(NTT)
Tel 046-240-2641 Fax 046-240-4317
E--mail: o 


Last modified: 2013-01-16 11:15:40


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