Thu, Oct 29 PM 14:00 - 17:30 |
(1) |
14:00-14:25 |
CZTS thin film solar cells by sulfurization |
Takuro Seki, Shigeo Igarashi, Yasuyoshi Kando (Shinshu Univ.), Noritaka Momose (Nagano National Coll. of Tech.), Yoshio Hashimoto, Kentaro Ito (Shinshu Univ.) |
(2) |
14:25-14:50 |
Fabrication and evaluation of silicon solar cells by using low-purity polycrystalline silicon wafers |
Yuki Sano, Satoru Tsuzuki, Takuzi Umeta, Yuzuru Narita, Takahiko Suzuki, Fumihiko Hirose (Yamagata Univ.) |
(3) |
14:50-15:15 |
Low temperature fabrication of Si TFTs by using organic insulator |
Masaki Hashimoto, Takahiko Suzuki, Yuzuru Narita, Fumihiko Hirose (Yamagata Univ.) |
(4) |
15:15-15:40 |
Low temperature fabrication of NiSi on Si by using Plasma including NiCl |
Fumihiko Hirose, Kensaku Kanomata, Yuzuru Narita (Yamagata Univ) |
|
15:40-15:50 |
Break ( 10 min. ) |
(5) |
15:50-16:15 |
Characterization of CuInO2 thin films grown by RF reactive sputtering |
Tsubasa Ogawa, Oki Kuraishi, Yoshitaka Kobayashi, Tomohiko Yamakami, Rinpei Hayashibe, Katsuya Abe (Shinshu Univ.) |
(6) |
16:15-16:40 |
Fabrication and Characterization of Cold Cathode using Carbon Nanotubes Dispersed in Insulator. |
Hirofumi Saito, Tatsuya Hagino, Junnki Matsumoto, Tomohiko Yamakami, Rinpei Hayashibe, Kiichi Kamimura (Shinshu Univ.) |
(7) |
16:40-17:05 |
Patterning of polyimide/single wall carbon nanotube composites and their field emission properties |
Katsuya Ishiyama, Eiji Itoh (Shinshu Univ.) |
(8) |
17:05-17:30 |
Crystal Growth of C60 Precipitated from Solution by Dipping Method
-- For C60 field effect transistor with high performance and nano-scale by simple synthesis method -- |
Nobuyuki Iwata, Kouhei Kurihara, Yasunari Iio, Hiroshi Yamamoto (Nihon Univ) |
Fri, Oct 30 AM 09:00 - 11:40 |
(9) |
09:00-09:25 |
Structural evaluation of Ge, SiC nanodots formed on Si based on hemispherical-dot model |
Tomoyoshi Kuroda, Takashi Otani, Ariyuki Kato, Masasuke Takata, Tadashi Akahane, Kanji Yasui (Nagaoka Univ. of Tech.) |
(10) |
09:25-09:50 |
Lowering of the AZO film resisitivity by hydrogen radical annealing |
Yutaka Ohshima, Masami Tahara, Mohd Hanif (Nagaoka Univ. of Tech.), Hironori Katagiri, Kazuo Jinbo (Nagaoka National College of Tech.), Yuichiro Kuroki, Masasuke Takata, Kanji Yasui (Nagaoka Univ. of Tech.) |
(11) |
09:50-10:15 |
Thermoelectric properties of Si/SiGeB multilayers with ultra-heavily B doping |
Akinari Matoba, Kimihiro Sasaki (Kanazawa Univ.) |
|
10:15-10:25 |
Break ( 10 min. ) |
(12) |
10:25-10:50 |
Investigation of annealing effects on ZrO2 films for gate insulator prepared by limited-reaction sputtering |
Naoya Inosaka, Zhou Ying, Kimihiro Sasaki (Kanazawa Univ.) |
(13) |
10:50-11:15 |
Examination of high speed deposition method for SrAl2O4 thin films by sputtering method |
Masakazu Koketsu, Takashi Kuno, Minoru Saito, Hidehiko Shimizu, Haruo Iwano, Takahiro Kawakami, Yasuo Fukushima, Kotaro Nagata (Niigata Univ.) |
(14) |
11:15-11:40 |
Examination of the Mg based alloy thin films by sputtering method |
Tomohiro Okada, Takeru Shimizu, Toshiro Tannai, Hidehiko Shimizu, Haruo Iwano, Takahiro Kawakami, Yasuo Fukushima, Kotaro Nagata (Niigata Univ) |