Wed, Dec 2 AM 10:00 - 10:45 |
(1) EID |
10:00-10:15 |
Automation of characteristic measurement of amorphous oxide semiconductor memristors and their effects |
Ryo Sumida, Ayata Kurasaki, Mutumi Kimura (RU) |
(2) EID |
10:15-10:30 |
Biological environment imitation experiment of artificial retina using thin film device |
Naoya Naito, Kouhei Toyoda (Ryukoku Univ.), Yoshio Okano (WetLab Corporation), Mutsumi Kimura (Ryukoku Univ.) |
(3) EID |
10:30-10:45 |
Characterization of amorphous Ga-Sn-O thin film thermoelectric conversion element |
Yuhei Yamamoto, Tatuya Aramaki, Ryo Ito, Mutumi Kimura (Ryukoku Univ.) |
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10:45-10:55 |
Break ( 10 min. ) |
Wed, Dec 2 AM 10:55 - 12:25 |
(4) |
10:55-11:25 |
|
(5) EID |
11:25-11:40 |
Stacked cross-point memory of synaptic elements using IGZO thin film |
Etsuko Iwagi (RU), Takumi Tsuno (NAIST), Mutsumi Kimura (RU) |
(6) EID |
11:40-11:55 |
Evaluation of dielectric properties of ferroelectric thin films for neural networks |
Yuma Ishisaki, Hiroki Umemura, Daiki Matsukawa, Mutsumi Kimura (RU), Eisuke Tokumitsu (JAIST), Kenichi Haga, Toshihiro Doi (MMC) |
(7) EID |
11:55-12:10 |
Investigation of oxide semiconductor thin film synapse using STDP learning method |
Tetsuya Katagiri, Daiki Yamakawa, Kenta Yatida, Kazuki Morigaki, Mutsumi Kimura (Ryukoku Univ.) |
(8) EID |
12:10-12:25 |
Brain type system using IGZO thin film synapses |
Yuki Onishi, Yuki Shibayama, Daiki Yamakawa (Ryukoku Univ.), Hiroya Ikeda, Yasuhiko Nakajima (NAIST), Mutumi Kimura (Ryukoku Univ./NAIST) |
|
12:25-13:10 |
Lunch ( 45 min. ) |
Wed, Dec 2 PM 13:10 - 14:20 |
(1) |
13:10-13:40 |
|
(2) SDM |
13:40-14:00 |
Synthesis of Single Crystal BaTiO3 Nanoparticles for Self-Assembly Technique |
Misa Yamasaki, Masaki Yamaguchi (Shibaura Inst. of Tech.) |
(3) SDM |
14:00-14:20 |
Improvement of Al2O3/GaN MOS Characteristics using Bilayer Structure |
Sho Sonehara, Mutsunori Uenuma, Yukiharu Uraoka (NAIST) |
|
14:20-14:30 |
Break ( 10 min. ) |
Wed, Dec 2 PM 14:30 - 15:50 |
(4) EID |
14:30-15:00 |
[Special Invited Talk]
Defects control in oxide semiconductors at low-temperature and its application to flexible devices |
Yusaku Magari, Mamoru Furuta (Kochi Univ. of Technol.) |
(5) SDM |
15:00-15:20 |
Coexistence of digital and analog resistive switching in Ta2O5-based ReRAM cells with TiN electrodes. |
Kazutaka Yamada, Tsunenobu Kimoto (Kyoto Univ.), Yusuke Nishi (Kyoto Univ./NIT, Maizuru College) |
(6) EID |
15:20-15:35 |
Optimization of double-layered ReRAM using Ga-Sn-O thin film |
Ayata Kurasaki, Kaito Hashimoto, Ryo Sumida, Shihori Akane, Daisuke Makioka, Sumio Sugisaki, Mutsumi Kimura (Ryukoku Univ.) |
(7) EID |
15:35-15:50 |
Phase Change Random Access memory using Cu2GeTe3 |
Shihori Akane (Ryukoku Univ), Isao Horiuchi (KOA Corp), Mutsumi Kimura (Ryukoku Univ) |
|
15:50-16:00 |
Break ( 10 min. ) |
Wed, Dec 2 PM 16:00 - 16:45 |
(8) |
16:00-16:30 |
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(9) EID |
16:30-16:45 |
Ferroelectric gate thin film transistor using oxide semiconductor Ga-Sn-O |
Tomoki Fukui, Kouki Nakagawa, Mutsumi Kimura (Ryukoku Univ) |