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Technical Committee on Electronic Information Displays (EID)
Chair: Mutsumi Kimura (Ryukoku Univ.)
Vice Chair: Tomokazu Shiga (Univ. of Electro-Comm.), Yuko Kominami (Shizuoka Univ.)
Secretary: Munekazu Date (NTT), Masahiro Yamaguchi (Tokyo Inst. of Tech.)
Assistant: Rumiko Yamaguchi (Akita Univ.), Ryosuke Nonaka (Toshiba), Hiroyuki Nitta (Japan Display), Takashi Kojiri (ZEON), Mitsuru Nakata (NHK)

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Technical Committee on Silicon Device and Materials (SDM)
Chair: Yuzou Oono (Univ. of Tsukuba) Vice Chair: Tatsuya Kunikiyo (Renesas)
Secretary: Rihito Kuroda (Tohoku Univ.)
Assistant: Tadashi Yamaguchi (Renesas)

DATE:
Fri, Dec 12, 2014 10:00 - 18:00

PLACE:
Katsura Campus, Kyoto University(A1, Katsura, Nishikyo, Kyoto 615-8510, Japan. http://www.kyoto-u.ac.jp/ja/access/downlodemap. Prof. T. Kimoto. *81-75-383-2300)

TOPICS:
Si and Si-related Materials and Devices, Display Technology

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Fri, Dec 12 AM (10:00 - 12:00)
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(1) 10:00 - 10:15
Shape and Size Effects on Hole Mobility of Rectangular Cross-sectional Ge Nanowires
Hajime Tanaka, Seigo Mori, Naoya Morioka, Jun Suda, Tsunenobu Kimoto (Kyoto Univ.)

(2) 10:15 - 10:30
Impacts of Orientation and Cross-sectional Shape on Mobility of P-channel Si Nanowire MOSFETs
Hiroaki Fujihara, Naoya Morioka, Hajime Tanaka, Jun Suda, Tsunenobu Kimoto (Kyoto Univ.)

(3) 10:30 - 10:45
Activation of B+ or B10H14+ Implanted Silicon by Soft X-ray Irradiation
Akira Heya, Fumito Kusakabe, Shota Hirano, Naoto Matsuo, Kazuhiro Kanda (Univ. of Hyogo)

(4) 10:45 - 11:00
Conduction mechanism and Charge retention mechanism for DNA memory transistor
Shouhei Nakamura, Naoto Matsuo, Akira Heya, Kazushige Yamana, Tadao Takada (Univ. of Hyogo), Masatake Fukuyama, Shin Yokoyama (hiroshima Univ)

(5) 11:00 - 11:15
Irradiation Effect of Carbon-Based Polyatomic Ions on Si Substrate
Mitsuaki Takeuchi, Kyohei Hayashi, Hiromichi Ryuto, Gikan H. Takaoka (Kyoto Univ.), Tsutomu Nagayama, Koji Matsuda (Nissin Ion Equipment)

(6) 11:15 - 11:30
Photoelectric conversion function analysis of the silicon solar module using electroluminescence(EL) emission intensity
Tsuyoshi Tomimoto, Shota Tsuzuki, Ayumi Tani (NAIST)

(7) 11:30 - 11:45
Application of Laser Doping with Boron-doped Silicon Nano Ink to High Efficiency Silicon Solar Cell
Mitsuaki Manabe, Hideki Sakagawa, Hideki Nishimura (NAIST), Yuka Tomizawa, Yoshinori Ikeda (Teijin), Takashi Fuyuki (NAIST)

(8) 11:45 - 12:00
Micro-Wall Solar Cell with Electric-Field Effect
Kohei Oki, Shota Wakamiya, Takahiro Kobayashi, Akira Heya, Naoto Matsuo (Univ. of Hyogo)

----- Lunch Break -----

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Fri, Dec 12 PM (13:00 - 15:30)
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(9) 13:00 - 13:15
Evaluation of photoconductivities of n-ch, p-ch, pin-ch poly-Si TFPTs
Takahiro Fuchiya, Yoshiharu Maeda, Takayuki Kadonome, Takumi Tanaka, Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ)

(10) 13:15 - 13:30
Characteristic Comparison of Frequency Modulation Type Photo Sensors using N-type・P-type・PIN-Type Thin-Film Phototransistors
Yoshiharu Maeda, Takahiro Fuchiya, Takayuki Kadonome, Takumi Tanaka, Shota Haruki, Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ.)

(11) 13:30 - 13:45
Low-Temperature CLC Poly-Si TFTs with Sputtered HfO2 Gate Dielectric Layer
Tatsuya Meguro, Akito Hara (Tohoku Gakuin Univ.)

(12) 13:45 - 14:00
Characteristic comparison of hybrid-type temperature sensors using poly-Si TFTs
Katsuya Kito, Hisashi Hayashi, Shuhei Kitajima, Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ.)

(13) 14:00 - 14:15
Characterization of Synchronous and Asynchronous Circuits using poly-Si TFTs
Yosuke Nagase (Ryukoku Univ.), Tokiyoshi Matsuda, Mutsumi Kimura (Osaka Univ.), Taketoshi Matsumoto, Hikaru Kobayashi (Ryukoku Univ.)

(14) 14:15 - 14:30
Crystallization of Germanium Film with (111) Orientation on Amorphous Substrate by Laser Annealing
Toru Takao, Masahiro Horita, Yasuaki Ishikawa, Yukiharu Uraoka (NAIST)

(15) 14:30 - 14:45
Research and Development of Magnetic Field Sensors using Poly-Si Hall Device with Gate terminal and IGZO Hall Device
Takaaki Matsumoto, Akito Yoshikawa, Shougo Miyamura, Haruki Shiga, Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ.), Tokuro Ozawa, Koji Aoki, Chih-Che Kuo (AUO japan)

(16) 14:45 - 15:00
Characteristics of Ga-Sn-Oxide thin film
Yuta Kato, Daiki Nishimoto, Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ.)

(17) 15:00 - 15:15
Effect of deposition conditions on the properties of IGZO thin film
Katsuya Nishino, Kota Takahashi, Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ.)

(18) 15:15 - 15:30
Characterization of the touch panel circuit using ITZO TFTs
Yuki Koga, Tokiyoshi Matsuda (Ryukoku Univ.), Mamoru Furuta (Kochi Univ. of Technol.), Mutsumi Kimura (Ryukoku Univ.)

----- Break -----

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Fri, Dec 12 PM (15:45 - 18:00)
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(19) 15:45 - 16:00
Porous Silicon 3D micro structure formation by strain-induced self-rolling by porosity control
Keita Ishiguro, Masaki Denokami, Kanna Aoki, Minoru Fujii (Kobe Univ.)

(20) 16:00 - 16:15
Formation of nc-Si in SiOx by Soft X-ray Irradiation
Fumito Kusakabe, Shota Hirano, Akira Heya, Naoto Matsuo, Kazuhiro Kanda, Takayasu Mochizuki, Shuji Miyamoto (Univ. of Hyogo), Kazuyuki Kohama, Kazuhiro Ito (Osaka Univ.)

(21) 16:15 - 16:30
Frequency dependence of Split C-V characteristics in Si-face 4H-SiC n-MOSFETs
Hiroto Yuki (NAIST), Hiroshi Yano (NAIST/Univ. Tsukuba)

(22) 16:30 - 16:45
Interface Characterization of 4H-SiC MOSFETs by Single Pulse Id-Vgs Measurements
Kosuke Isono (NAIST), Hiroshi Yano (NAIST/Univ. Tsukuba)

(23) 16:45 - 17:00
Temperature Dependence of Current Gain in 4H-SiC BJTs
Satoshi Asada, Takafumi Okuda, Tsunenobu Kimoto, Jun Suda (Kyoto Univ.)

(24) 17:00 - 17:15
Atomic Layer Deposition of Al2O3 Film Utilizing Water Vapor Plasma Oxidation
Tomoaki Umehara, Masahiro Horita, Koji Yoshitsugu, Yasuaki Ishikawa, Yukiharu Uraoka (NAIST)

(25) 17:15 - 17:30
Study of driving forces that cause resistive switching of binary transition metal oxide memory
Ryosuke Koishi, Takumi Moriyama, Kouhei Kimura, Kouki Kawano, Hidetoshi Miyashita, Sang-Seon Lee, Satoru Kishida, Kentaro Kinoshita (Tottori Univ.)

(26) 17:30 - 17:45
Resistive switching characteristics of NiO-based ReRAM after semi-forming process.
Hiroki Sasakura, Yusuke Nishi, Tatsuya Iwata, Tsunenobu Kimoto (Kyoto Univ.)

(27) 17:45 - 18:00
Study on Formative Mechanism of Conductive Path in Resistive Random Access Memory (ReRAM)
-- Analyses of Various NiO Surface States Using Ab Initio Calculations --
Takumi Moriyama (Tottori Univ.), Takahiro Yamasaki, Takahisa Ohno (NIMS), Satoru Kishida, Kentaro Kinoshita (Tottori Univ.)

# Information for speakers
General Talk (15分) will have 10 minutes for presentation and 5 minutes for discussion.

=== Technical Committee on Electronic Information Displays (EID) ===
# FUTURE SCHEDULE:

Thu, Jan 22, 2015 - Fri, Jan 23, 2015: Ryukoku University [Mon, Nov 3]

=== Technical Committee on Silicon Device and Materials (SDM) ===
# FUTURE SCHEDULE:

Tue, Jan 27, 2015: Kikai-Shinko-Kaikan Bldg. [unfixed]
Thu, Feb 5, 2015 - Fri, Feb 6, 2015: Hokkaido Univ. [Fri, Dec 5], Topics: Functional nanodevices and related technologies
Mon, Mar 2, 2015: Kikai-Shinko-Kaikan Bldg , Topics: http://www.ieice.org/jpn/about/syozai.html

# SECRETARY:
Rihito Kuroda(Tohoku Univ.)
Tel 022-795-4833 Fax 022-795-4834
E-mail: