IEICE Technical Committee Submission System
Advance Program
Online Proceedings
[Sign in]
Tech. Rep. Archives
 Go Top  Go Back   Prev SDM Conf / Next SDM Conf [HTML] / [HTML(simple)] / [TEXT]  [Japanese] / [English] 

===============================================
Technical Committee on Silicon Device and Materials (SDM)
Chair: Takahiro Shinada (Tohoku Univ.) Vice Chair: Hiroshige Hirano (TowerJazz Panasonic)
Secretary: Hiroya Ikeda (Shizuoka Univ.), Tetsu Morooka (TOSHIBA MEMORY)
Assistant: Takahiro Mori (AIST), Nobuaki Kobayashi (Nihon Univ.)

DATE:
Thu, Feb 7, 2019 10:00 - 16:55

PLACE:


TOPICS:
Backend / Assembly and Related materials technology

----------------------------------------
Thu, Feb 7 No. 42 (10:00 - 16:55)
----------------------------------------

----- Opening Address ( 5 min. ) -----

(1) 10:05 - 10:45
[Invited Talk]
High-precision Dual Damascene Fabrication Technique
Takashi Hayakawa, Makoto, Syuji Nozawa, Tatsuya Yamaguchi (TEL)

(2) 10:45 - 11:25
[Invited Talk]
Half pitch 14 nm direct pattering with Nanoimprint lithography
Tetsuro Nakasugi (Toshiba Memory)

(3) 11:25 - 12:05
[Invited Talk]
Ultrafine 3D Interconnect Technology Using Directed Self-Assembly
Takafumi Fukushima, Murugesan Mariappan, Mitsumasa Koyanagi (Tohoku Univ.)

----- Lunch Break ( 65 min. ) -----

(4) 13:10 - 13:50
[Invited Talk]
Stress Investigation of Annular-Trench-Isolated (ATI) Through Silicon Via (TSV)
Wei Feng, Naoya Watanabe, Haruo Shimamoto, Masahiro Aoyagi, Katsuya Kikuchi (AIST)

(5) 13:50 - 14:30
[Invited Talk]
Grain-Boundary-Crystallinity Dependence of Mechanical Properties and EM Resistance of Electroplated Copper Interconnections
Yifan Luo, Yutaro Nakoshi, Ryota Mizuno, Ken Suzuki, Hideo Miura (Tohoku Univ.)

(6) 14:30 - 15:10
[Invited Talk]
Single Crystal Al Interconnects formed on p-GaN and their Application to GaN FET
Takeshi Harada, Koji Utaka, Yusuke Kand, Katsuhiko Onishi, Keiichi Matsunaga, Masahiro Hikita, Yasuhiro Uemoto (Panasonic)

----- Break ( 20 min. ) -----

(7) 15:30 - 16:10
[Invited Talk]
New contact material for advanced CMOS: cluster-preforming-deposited amorphous Si-rich W silicide film
Naoya Okada, Noriyuki Uchida, Shinichi Ogawa, Toshihiko Kanayama (AIST)

(8) 16:10 - 16:50
[Invited Talk]
Fabrication of substrates with smooth Au surface for bonding at room temperature in atmospheric air
Takashi Matsumae, Michitaka Yamamoto, Yuichi Kurashima, Eiji Higurashi, Hideki Takagi (AIST)

----- Closing Address ( 5 min. ) -----

# Information for speakers
Invited Talk will have 35 minutes for presentation and 5 minutes for discussion.

# CONFERENCE SPONSORS:
- This conference is co-sponsored by The Japan Society of Applied Physics.


=== Technical Committee on Silicon Device and Materials (SDM) ===
# FUTURE SCHEDULE:

Thu, Apr 25, 2019 - Sat, Apr 27, 2019: Yakushima Environmental and Culture Village Center [Sun, Feb 17], Topics: Organic molecular devices, silicon device, biotechnology, thin film device, novel material, evaluation et al.
Thu, May 16, 2019 - Fri, May 17, 2019 (tentative): Shizuoka Univ. (Hamamatsu) [Wed, Mar 13], Topics: Materials, Fabrication, and Characterization of Functional Devices, and Related Technology

# SECRETARY:
Tetsu Morooka(Toshiba Memory Corp.)
Tel 059-390-7451 Fax 059-361-2739
E-mail: ba


Last modified: 2018-12-18 16:46:36


Notification: Mail addresses are partially hidden against SPAM.

[Download Paper's Information (in Japanese)] <-- Press download button after click here.
 
[Cover and Index of IEICE Technical Report by Issue]
 

[Presentation and Participation FAQ] (in Japanese)
 

[Return to SDM Schedule Page]   /  
 
 Go Top  Go Back   Prev SDM Conf / Next SDM Conf [HTML] / [HTML(simple)] / [TEXT]  [Japanese] / [English] 


[Return to Top Page]

[Return to IEICE Web Page]


The Institute of Electronics, Information and Communication Engineers (IEICE), Japan