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=============================================== Technical Committee on Silicon Device and Materials (SDM) Chair: Shigeyoshi Watanabe (Shonan Inst. of Tech.) Vice Chair: Toshihiro Sugii (Fujitsu Microelectronics) Secretary: Shigeru Kawanaka (Toshiba), Hisahiro Anzai (Sony) Assistant: Syunichiro Ohmi (Tokyo Inst. of Tech.) =============================================== Technical Committee on Electron Device (ED) Chair: Masaaki Kuzuhara (Univ. of Fukui) Vice Chair: Tamotsu Hashidume (Hokkaido Univ.) Secretary: Koichi Murata (NTT) Assistant: Naoki Hara (Fujitsu Labs.), Kunio Tsuda (Toshiba) =============================================== Technical Committee on Component Parts and Materials (CPM) Chair: Kiichi Kamimura (Shinshu Univ.) Vice Chair: Kanji Yasui (Nagaoka Univ. of Tech.) Secretary: Hidehiko Shimizu (Niigata Univ.), Naoki Oba (NTT) Assistant: Yasushi Takemura (Yokohama National Univ.), Tadayuki Imai (NTT) DATE: Thu, May 14, 2009 13:30 - 17:05 Fri, May 15, 2009 09:00 - 14:40 PLACE: (https://www.ieice.org/~ed/jpn/access%20tecknos-U.pdf. Prof. Akihiro WAKAHARA) TOPICS: Crystal growth, evaluation and device (Compound, Si, SiGe, Electronic and light emitting materials） ---------------------------------------- Thu, May 14 PM (13:30 - 17:05) ---------------------------------------- (1) 13:30 - 13:55 Preparation and Evaluation of SrS:Cu films for blue EL elements Masaaki Isai, Yuji Kurachi, Norifumi Yamada, Toshinori Takeuchi, Takashi Hochin (Shizuoka Univ.) (2) 13:55 - 14:20 Evaluation of SrS:Cu films for blue EL elements Norifumi Yamada, Takashi Hochin, Masaaki Isai (Shizuoka Univ.) (3) 14:20 - 14:45 Effect of quartz tube on crystal properties of LiMn2O4 films prepared by RF magnetron sputtering Takayuki Hosokawa, Satoshi Sekigawa, Masaaki Isai (Shizuoka Univ.) (4) 14:45 - 15:10 Property of Ga2O3 films and evaluation of oxygen sensors properties Shinya Kayano, Takashi Horiuchi, Masaaki Isai (Shizuoka Univ.) ----- Break ( 15 min. ) ----- (5) 15:25 - 15:50 Preparation of TiO2 thin films by RF magnetron sputtering method and their photocatalytic properties Tatsuya Ito, Tatsuya Endo, Masaaki Isai (Shizuoka Univ.), Tetsuya Sakai, Yoichi Hoshi (Tokyo Polytech. Univ.) (6) 15:50 - 16:15 A proposal for Highly Transparent Chalcogenide Alloys for Thin-Film-Solar-Cell Applications Asraf M. Abdel Haleem, Masaya Ichimura (Nagoya Inst. of Tech.) (7) 16:15 - 16:40 Analysis of Atomic and Electronic Structures of Cu2ZnSnS4 Based on the First-Principle Calculation Yuki Nakashima, Masaya Ichimura (Nagoya Inst. of Tech.) (8) 16:40 - 17:05 Deposition of Microcrystalline SiGe by Magnetron Sputtering on SiO2 Substrates Akihiko Hiroe, Tetsuya Goto, Akinobu Teramoto, Tadahiro Ohmi (Tohoku Univ.) ---------------------------------------- Fri, May 15 AM (09:00 - 11:45) ---------------------------------------- (9) 09:00 - 09:25 Growth of Homogeneous InGaSb Ternary Bulk Crystal and the Observation of Composition Profile in the Solution by X-Ray Penetration Method Govindasamy Rajesh, Hisashi Morii, Toru Aoki, Tadanobu Koyama, Yoshimi Momose, Akira Tanaka (Shizuoka Univ.), Tetsuo Ozawa (Shizuoka Inst. of Science and Tech.), Yuko Inatomi (JAXA), Yasuhiro Hayakawa (Shizuoka Univ.) (10) 09:25 - 09:50 MBE-VLS growth of compound semiconductors nanowires on Si substrates Masahito Yamaguchi, Ji-Hyun Paek, Hirohide Ichihashi, Isao Horiuchi (Nagoya Univ.), Nobuhiko Sawaki (Aichi Inst. of Tech.) (11) 09:50 - 10:15 Selective epitaxy growth mechanism of GaAs on circularly patterned GaAs (100) substrates by LPE and CCLP Mouleeswaran Deivasigamani., Tadanobu Koyama, Yasuhiro Hayakawa (Shizuoka Univ.) ----- Break ( 15 min. ) ----- (12) 10:30 - 10:55 Growth of GaP on Si Substrates at High Temperature by MOVPE Tatsuya Takagi, Takuya Okamoto, Shunro Fuke, Yasushi Takano (Shizuoka Univ.) (13) 10:55 - 11:20 Luminescence dynamics of p-GaPN alloys and application for modulation doped highly-strained GaAsN/GaPN quantum wells. Saburo Mitsuyoshi, Kazuyuki Umeno, Noriyuki Urakami, Hiroshi Okada, Yuzo Furukawa, Akihiro Wakahara (Toyohashi Univ. of Tech.) (14) 11:20 - 11:45 Growth and luminescence characterization of self-assembled InGaAsN/GaPN quantum dots Noriyuki Urakami, Ryosuke Noma, Kazuyuki Umeno, Saburo Mitsuyoshi, Hiroshi Okada, Yuzo Furukawa, Akihiro Wakahara (Toyohashi Univ. of Tech.) ---------------------------------------- Fri, May 15 PM (13:00 - 14:40) ---------------------------------------- (15) 13:00 - 13:25 MOVPE growth and deep-ultraviolet chathodoluminescence of AlGaN on AlN/sapphire Hiroyuki Taketomi, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Fumitsugu Fukuyo, Tomoyuki Okada, Hidetsugu Takaoka, Harumasa Yoshida (HAMAMATSU PHOTONICS K.K.) (16) 13:25 - 13:50 a-plane GaN grown on r-plane sapphire by MOVPE Bei Ma, Reina Miyagawa, Weiguo Hu, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.) (17) 13:50 - 14:15 Operation stability assessment of AlGaN/GaN HEMT Masafumi Tajima, Tamotsu Hashizume (Hokkaido Univ.) (18) 14:15 - 14:40 Electrochemical oxidation of GaN for surface control structure Naohisa Harada, Nanako Shiozaki, Tamotsu Hashizume (hokkaido Univ.) === Technical Committee on Silicon Device and Materials (SDM) === # FUTURE SCHEDULE: Fri, Jun 19, 2009: An401・402 Inst. Indus. Sci., The Univ. of Tokyo [Tue, Apr 14], Topics: Science and Technology for Dielectric Thin Films for MIS Devices Wed, Jun 24, 2009 - Fri, Jun 26, 2009: Haeundae Grand Hotel, Busan, Korea [Fri, Apr 10], Topics: 2009 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices Thu, Jul 16, 2009 - Fri, Jul 17, 2009: Tokyo Institute of Technology [Wed, May 13], Topics: Low voltage/low power techniques, novel devices, circuits, and applications # SECRETARY: Shigeru KAWANAKA (Toshiba) TEL 045-776-5670, FAX 045-776-4104  ge       ba === Technical Committee on Electron Device (ED) === # FUTURE SCHEDULE: Thu, Jun 11, 2009 - Fri, Jun 12, 2009: [Wed, Apr 15] Wed, Jun 24, 2009 - Fri, Jun 26, 2009: Haeundae Grand Hotel, Busan, Korea [Fri, Apr 10], Topics: 2009 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices Thu, Jul 30, 2009 - Fri, Jul 31, 2009: Osaka Univ. Icho-Kaikan [Sat, May 23] # SECRETARY: Koichi Murata（NTT) TEL：046-240-2871、FAX：046-270-2872 E-mail：    aecl Hara Naoki （Fujitsu Lab.） TEL : 046-250-8242、FAX : 046-250-8168 E-mail :  o      Kunio Tsuda（Toshiba） TEL : 044-549-2142、FAX : 044-520-1501 E-mail :   o ba=== Technical Committee on Component Parts and Materials (CPM) === # FUTURE SCHEDULE: Fri, Jun 19, 2009: Kikai-Shinko-Kaikan Bldg. [Tue, Apr 21] Mon, Aug 10, 2009 - Tue, Aug 11, 2009: Hirosaki Univ. [Fri, Jun 19], Topics: Electronic Component Parts and Materials, etc. Thu, Aug 20, 2009 - Fri, Aug 21, 2009: [Fri, Jun 19] # SECRETARY: Hidehiko Shimizu（Niigata University） TEL 025-262-6811, FAX 025-262-6811 E-mail:   engi -u Yasushi Takemura（Yokohama National University） TEL 045-339-4151, FAX 045-339-4151 E-mail:  y Last modified: 2009-09-07 15:48:15 |
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