Thu, May 14 PM 13:30 - 17:05 |
(1) |
13:30-13:55 |
Preparation and Evaluation of SrS:Cu films for blue EL elements |
Masaaki Isai, Yuji Kurachi, Norifumi Yamada, Toshinori Takeuchi, Takashi Hochin (Shizuoka Univ.) |
(2) |
13:55-14:20 |
Evaluation of SrS:Cu films for blue EL elements |
Norifumi Yamada, Takashi Hochin, Masaaki Isai (Shizuoka Univ.) |
(3) |
14:20-14:45 |
Effect of quartz tube on crystal properties of LiMn2O4 films prepared by RF magnetron sputtering |
Takayuki Hosokawa, Satoshi Sekigawa, Masaaki Isai (Shizuoka Univ.) |
(4) |
14:45-15:10 |
Property of Ga2O3 films and evaluation of oxygen sensors properties |
Shinya Kayano, Takashi Horiuchi, Masaaki Isai (Shizuoka Univ.) |
|
15:10-15:25 |
Break ( 15 min. ) |
(5) |
15:25-15:50 |
Preparation of TiO2 thin films by RF magnetron sputtering method and their photocatalytic properties |
Tatsuya Ito, Tatsuya Endo, Masaaki Isai (Shizuoka Univ.), Tetsuya Sakai, Yoichi Hoshi (Tokyo Polytech. Univ.) |
(6) |
15:50-16:15 |
A proposal for Highly Transparent Chalcogenide Alloys for Thin-Film-Solar-Cell Applications |
Asraf M. Abdel Haleem, Masaya Ichimura (Nagoya Inst. of Tech.) |
(7) |
16:15-16:40 |
Analysis of Atomic and Electronic Structures of Cu2ZnSnS4 Based on the First-Principle Calculation |
Yuki Nakashima, Masaya Ichimura (Nagoya Inst. of Tech.) |
(8) |
16:40-17:05 |
Deposition of Microcrystalline SiGe by Magnetron Sputtering on SiO2 Substrates |
Akihiko Hiroe, Tetsuya Goto, Akinobu Teramoto, Tadahiro Ohmi (Tohoku Univ.) |
Fri, May 15 AM 09:00 - 11:45 |
(9) |
09:00-09:25 |
Growth of Homogeneous InGaSb Ternary Bulk Crystal and the Observation of Composition Profile in the Solution by X-Ray Penetration Method |
Govindasamy Rajesh, Hisashi Morii, Toru Aoki, Tadanobu Koyama, Yoshimi Momose, Akira Tanaka (Shizuoka Univ.), Tetsuo Ozawa (Shizuoka Inst. of Science and Tech.), Yuko Inatomi (JAXA), Yasuhiro Hayakawa (Shizuoka Univ.) |
(10) |
09:25-09:50 |
MBE-VLS growth of compound semiconductors nanowires on Si substrates |
Masahito Yamaguchi, Ji-Hyun Paek, Hirohide Ichihashi, Isao Horiuchi (Nagoya Univ.), Nobuhiko Sawaki (Aichi Inst. of Tech.) |
(11) |
09:50-10:15 |
Selective epitaxy growth mechanism of GaAs on circularly patterned GaAs (100) substrates by LPE and CCLP |
Mouleeswaran Deivasigamani., Tadanobu Koyama, Yasuhiro Hayakawa (Shizuoka Univ.) |
|
10:15-10:30 |
Break ( 15 min. ) |
(12) |
10:30-10:55 |
Growth of GaP on Si Substrates at High Temperature by MOVPE |
Tatsuya Takagi, Takuya Okamoto, Shunro Fuke, Yasushi Takano (Shizuoka Univ.) |
(13) |
10:55-11:20 |
Luminescence dynamics of p-GaPN alloys and application for modulation doped highly-strained GaAsN/GaPN quantum wells. |
Saburo Mitsuyoshi, Kazuyuki Umeno, Noriyuki Urakami, Hiroshi Okada, Yuzo Furukawa, Akihiro Wakahara (Toyohashi Univ. of Tech.) |
(14) |
11:20-11:45 |
Growth and luminescence characterization of self-assembled InGaAsN/GaPN quantum dots |
Noriyuki Urakami, Ryosuke Noma, Kazuyuki Umeno, Saburo Mitsuyoshi, Hiroshi Okada, Yuzo Furukawa, Akihiro Wakahara (Toyohashi Univ. of Tech.) |
Fri, May 15 PM 13:00 - 14:40 |
(15) |
13:00-13:25 |
MOVPE growth and deep-ultraviolet chathodoluminescence of AlGaN on AlN/sapphire |
Hiroyuki Taketomi, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Fumitsugu Fukuyo, Tomoyuki Okada, Hidetsugu Takaoka, Harumasa Yoshida (HAMAMATSU PHOTONICS K.K.) |
(16) |
13:25-13:50 |
a-plane GaN grown on r-plane sapphire by MOVPE |
Bei Ma, Reina Miyagawa, Weiguo Hu, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.) |
(17) |
13:50-14:15 |
Operation stability assessment of AlGaN/GaN HEMT |
Masafumi Tajima, Tamotsu Hashizume (Hokkaido Univ.) |
(18) |
14:15-14:40 |
Electrochemical oxidation of GaN for surface control structure |
Naohisa Harada, Nanako Shiozaki, Tamotsu Hashizume (hokkaido Univ.) |