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Technical Committee on Silicon Device and Materials (SDM)
Chair: Yuzou Oono (Univ. of Tsukuba) Vice Chair: Tatsuya Kunikiyo (Renesas)
Secretary: Rihito Kuroda (Tohoku Univ.)
Assistant: Tadashi Yamaguchi (Renesas)

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Technical Committee on Electron Device (ED)
Chair: Naoki Hara (Fujitsu Labs.) Vice Chair: Koichi Maezawa (Univ. of Toyama)
Secretary: Seiya Kasai (Hokkaido Univ.), Koji Matsunaga (NEC)
Assistant: Toshikazu Suzuki (JAIST), Manabu Arai (New JRC)

DATE:
Thu, Feb 5, 2015 13:30 - 17:50
Fri, Feb 6, 2015 09:30 - 12:20

PLACE:
Centennial Hall, Hokkaido University(N9, W6, Sapporo 060-0809, Japan. 10 min walk from JR Sapporo Station. http://www.hokudai.ac.jp/introduction/campus/100th/. Prof. Seiya Kasai. +81-11-706-7171 (Secretary))

TOPICS:
Functional nanodevices and related technologies

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Thu, Feb 5 PM (13:30 - 17:50)
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(1) 13:30 - 14:15
[Invited Talk]
Development of Si-based thermoelectric nanomaterial using ultrathin SiO2 film technique
Yoshiaki Nakamura (Osaka Univ.)

(2) 14:15 - 14:40
Seebeck coefficient in crystalline SiGe for high-efficiency thermoelectric devices
Hiroya Ikeda, Veerappan Manimuthu, Muthusamy Omprakash, Yuhei Suzuki, Faiz Salleh, Mukannan Arivanandhan (Shizuoka Univ.), Yoshinari Kamakura (Osaka Univ.), Yasuhiro Hayakawa (Shizuoka Univ.)

(3) 14:40 - 15:05
Accuracy of Time Domain Charge Pumping
Tokinobu Watanabe, Masahiro Hori (Univ. of Toyama), Toshiaki Tsuchiya (Shimane Univ.), Yukinori Ono (Univ. of Toyama)

(4) 15:05 - 15:30
Highly functionality of three-terminal nanodot array for multi-input and multi-output devices
Isamu Yoshioka, Hikaru Satoh, Takafumi Uchida, Atsushi Tsurumaki-Fukuchi, Masashi Arita (Hokkaido Univ.), Akira Fujiwara (NTT), Yasuo Takahashi (Hokkaido Univ.)

----- Break ( 15 min. ) -----

(5) 15:45 - 16:10
Sensitivity Improvement in Refractive Index Measurement by Photodiode with Surface Plasmon Antenna
Hiroaki Satoh, Shohei Iwata, Atsushi Ono, Hiroshi Inokawa (Shizuoka Univ.)

(6) 16:10 - 16:35
Ferroelectric device using P(VDF-TrFE) single crystalline nano-fiber
Yoichiro Neo, Masashi Noyori, Tomoaki Masuzawa, Hidenori Mimura (Shizuoka Univ.)

(7) 16:35 - 17:00
Enhancement of carrier injection in OLEDs by field concentration to carbon nanotube thin film
Tatsuya Yamada, Shigeru Kishimoto, Yutaka Ohno (Nagoya Univ.)

(8) 17:00 - 17:25
Low pull-in voltage graphene nanoelectromechanical switch
Jian Sun, Nozomu Kanetake, Takuo Chikuba, Manoharan Muruganathan, Hiroshi Mizuta (JAIST)

(9) 17:25 - 17:50
Higher frequency signal detection than the fundamental oscillation frequency in resonant tunneling super regenerative detectors
Koichi Maezawa, Jie Pan, Yuichiro Kakutani, Taishu Nakayama, Masayuki Mori (Univ. Toyama)

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Fri, Feb 6 AM (09:30 - 12:20)
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(10) 09:30 - 10:15
[Invited Talk]
Nano Devices of Single Crystalline Nanowires
Takeshi Yanagida (Osaka Univ.)

(11) 10:15 - 10:40
Current Noise Characteristics in GaAs-based Nanowire FETs and Carbon Nanotube Devices
Shinya Inoue, Seiya Kasai (Hokkaido Univ.), Agung Setiadi, Megumi Akai-Kasaya (Osaka Univ.)

(12) 10:40 - 11:05
Fabrication of top-gate carbon nanotube thin-film transistor with short channel by high-speed printing technique
Michihiko Maeda, Kentaro Higuchi, Shigeru Kishimoto (Nagoya Univ.), Takuya Tomura, Masafumi Takesue, Katsuhiko Hata (Bando Chemical), Yutaka Ohno (Nagoya Univ.)

(13) 11:05 - 11:30
Fabrication and characterization of graphene single carrier transistor
Takuya Iwasaki, Manoharan Muruganathan, Hiroshi Mizuta (JAIST)

(14) 11:30 - 11:55
Operation Speed Improvement of Carbon Nanotube Integrated Circuits on Flexible Substrate
Toshitada Sanzen (Nagoya Univ.), Antti Kaskela, Patrik Laiho, Albert G. Nasibulin (Aalto Univ.), Shigeru Kishimoto (Nagoya Univ.), Esko I. Kauppinen (Aalto Univ.), Yutaka Ohno (Nagoya Univ.)

(15) 11:55 - 12:20
Electronic circuit implementation of amoeba-inspired solution search algorithm for optimization problems
Ryo Wakamiya, Seiya Kasai (Hokkaido Univ.), Masashi Aono (Tokyo Inst. of Tech.), Makoto Naruse (NICT), Hiroyoshi Miwa (Kwansei Gakuin Univ.)

# Information for speakers
General Talk will have 20 minutes for presentation and 5 minutes for discussion.
Invited Talk will have 40 minutes for presentation and 5 minutes for discussion.

# CONFERENCE SPONSORS:
- This conference is co-sponsored by The Japan Society of Applied Physics.

=== Technical Committee on Silicon Device and Materials (SDM) ===
# FUTURE SCHEDULE:

Mon, Mar 2, 2015: Kikai-Shinko-Kaikan Bldg , Topics: http://www.ieice.org/jpn/about/syozai.html
Wed, Apr 29, 2015 - Thu, Apr 30, 2015: Oh-hama Nobumoto Memorial Hall [Sat, Feb 14], Topics: Thin FIlms, Functional Electronics Devices, New Functional Materials and Evaluation, BIomtechnology
Thu, May 28, 2015 - Fri, May 29, 2015: Venture Business Laboratory, Toyohashi University of Technology [Tue, Mar 24], Topics: crystal growth、devices characterization , etc.

# SECRETARY:
Rihito Kuroda(Tohoku Univ.)
Tel 022-795-4833 Fax 022-795-4834
E-mail:

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=== Technical Committee on Electron Device (ED) ===
# FUTURE SCHEDULE:

Thu, Apr 16, 2015 - Fri, Apr 17, 2015: Laboratory for Nanoelectronics and Spintronics [Fri, Feb 13]
Thu, May 28, 2015 - Fri, May 29, 2015: Venture Business Laboratory, Toyohashi University of Technology [Tue, Mar 24], Topics: crystal growth、devices characterization , etc.

# SECRETARY:
Seiya Kasai (Hokkaido Univ.)
TEL : 011-706-6509 Fax : 011-716-6004
E-mail :