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Technical Committee on Silicon Device and Materials (SDM)
Chair: Tatsuya Kunikiyo (Renesas) Vice Chair: Takahiro Shinada (Tohoku Univ.)
Secretary: Rihito Kuroda (Tohoku Univ.), Tadashi Yamaguchi (Renesas)
Assistant: Hiroya Ikeda (Shizuoka Univ.), Tetsu Morooka (TOSHIBA MEMORY)

DATE:
Thu, Feb 8, 2018 10:00 - 16:50

PLACE:

TOPICS:

----- Opening Address ( 5 min. ) -----

(1) 10:05 - 10:45
[Invited Talk]
Cluster-Preforming-Deposited Amorphous WSin (n = 12) Insertion Film of Low SBH and High Diffusion Barrier for Direct Cu Contact
Naoya Okada, Noriyuki Uchida, Shinichi Ogawa, Kazuhiko Endo, Toshihiko Kanayama (AIST)

(2) 10:45 - 11:25
[Invited Talk]
Characteristics of Cobalt alloy for low resistivity contact in sub 10 nm FinFET
Junichi Koike, Maryamsadat Hosseini, Daisuke Ando, Yuji Sutou (Tohoku Univ.)

(3) 11:25 - 12:05
[Invited Talk]
Moisture Barrier Properties of Capping Graphene for Copper Metallization
Kazuyoshi Ueno, Ploybussara Gomasang, Takumi Abe (SIT), Kenji Kawahara (Kyushu Univ.), Yoko Wasai (Horiba Techno), Nguyen Thanh Cuong (NIMS), Nataliya Nabatova-Gabain (Horiba Techno), Hiroki Ago (Kyushu Univ.), Susumu Okada (Univ. Tsukuba)

----- Lunch Break ( 65 min. ) -----

(4) 13:10 - 13:50
[Invited Talk]
A Novel Role for SiCN to Suppress H2O Outgas from TEOS oxide films in wafer bonding
Michinari Tetani, Yasunori Morinaga, Masakazu Hamada, Masahiko Takeuchi, Shinji Uya, Hisashi Yano, Naoaki Sato, Susumu Matsumoto (TPSCo)

(5) 13:50 - 14:30
[Invited Talk]
In-situ Analysis of Corrosion inhibitor behavior of Co surface
Toshiaki Shibta, Tomohiro Kusano, Ken Harada, Kan Takeshita, Yasuhiro Kawase (Mitsubishi Chemical Corp.)

(6) 14:30 - 15:10
[Invited Talk]
Low cost solder-TSV technology for automobile application
Atsushi Mizutani, Yuki Ohara, Yuki Inagaki, Kazushi Asami (DENSO)

----- Break ( 20 min. ) -----

(7) 15:30 - 16:10
[Invited Talk]
Low temperature Cu-Cu bonding by transient liquid phase sintering of mixed Cu nanoparticles and Sn-Bi eutectic powders
Muhammad Khairi Faiz, Takehiro Yamamoto (Waseda Univ.), Tadatomo Suga (Tokyo Univ.), Tomoyuki Miyashita, Makoto Yoshida (Waseda Univ.)

(8) 16:10 - 16:50
[Invited Talk]
Next Generation Circuit Fabrication by Molecular Bonding Technology
Akihiko Happoya (Toshiba), Kunio Mori (SCL)

----- Closing Address ( 5 min. ) -----

# Information for speakers
Invited Talk will have 30 minutes for presentation and 10 minutes for discussion.

# CONFERENCE SPONSORS:
- This conference is co-sponsored by The Japan Society of Applied Physics.

=== Technical Committee on Silicon Device and Materials (SDM) ===
# FUTURE SCHEDULE:

Wed, Feb 28, 2018 (changed): Centennial Hall, Hokkaido Univ. [Wed, Dec 20], Topics: Functional nanodevices and related technologies
Thu, Mar 8, 2018: [Fri, Jan 19]
Fri, Apr 6, 2018 - Sat, Apr 7, 2018: Okinawaken Seinen Kaikan [Mon, Feb 12], Topics: Thin film devices (Si, compound, organic, flexible), Biotechnology, Materials, Characterization, etc.
Thu, May 24, 2018 (changed): Toyohashi Univ. of Tech. (VBL) [Fri, Mar 16], Topics: Crystal growth, characterization, and devices (compound semiconductors, Si, SiGe, opto-electrical materials), and others

# SECRETARY:
Rihito Kuroda(Tohoku Univ.)
Tel 022-795-4833 Fax 022-795-4834
E-mail: