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Technical Committee on Silicon Device and Materials (SDM)
Chair: Tetsuro Endo (Tohoku Univ.) Vice Chair: Yasuo Nara (Fujitsu Semiconductor)
Secretary: Yukinori Ono (NTT), Shintaro Nomura (Univ. of Tsukuba)
Assistant: Yoshitaka Sasago (Hitachi)

DATE:
Mon, Mar 5, 2012 10:00 - 16:30

PLACE:

TOPICS:
Wiring and Assembly Technology, etc

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Mon, Mar 5 AM (10:00 - 16:30)
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----- Opening Address ( 5 min. ) -----

(1) 10:05 - 10:50
[Keynote Address]
Development of Ultra Low Voltage Devices utilizing BEOL Process
Shin'ichiro Kimura (LEAP)

(2) 10:50 - 11:20
Basic Performance of a Logic-IP Compatible eDRAM with Cylinder Capacitors in Low-k/Cu BEOL Layers
Ippei Kume, Naoya Inoue, Ken'ichiro Hijioka, Jun Kawahara, Koichi Takeda, Naoya Furutake, Hiroki Shirai, Kenya Kazama, Shin'ichi Kuwabara, Msasatoshi Watarai, Takashi Sakoh, Toshifumi Takahashi, Takashi Ogura, Toshiji Taiji, Yoshiko Kasama (Renesas Electronics)

(3) 11:20 - 11:50
Highly Reliable BEOL-Transistor with oxygen-controlled InGaZnO channel and Gate/Drain Offset design
Kishou Kaneko, Naoya Inoue, Shinobu Saito, Naoya Furutake, Hiroshi Sunamura, Jun Kawahara, Masami Hane, Yoshihiro Hayashi (Renesas Electronics)

----- Lunch Break ( 70 min. ) -----

(4) 13:00 - 13:30
Initial Growth Observation of Multilayer Graphene on SiO2/Si substrate using Raman Spectroscopy and XPS
Yoshihiro Ojiro, Shuichi Ogawa (Tohoku Univ.), Manabu Inukai (JASRI), Motonobu Sato (AIST), Eiji Ikenaga, Takayuki Muro (JASRI), Mizuhisa Nihei (AIST), Yuji Takakuwa (Tohoku Univ.), Naoki Yokoyama (AIST)

(5) 13:30 - 14:00
Single-layered barrier/liner Co(W) by ALD/CVD for next generation ULSI-Cu interconnect
Hideharu Shimizu (Taiyo Nippon Sanso/Tokyo Univ.), Kohei Shima, Takeshi Momose (Tokyo Univ.), Yoshihiko Kobayashi (Taiyo Nippon Sanso), Yukihiro Shimogaki (Tokyo Univ.)

(6) 14:00 - 14:30
Evaluation of additives effects in copper electroplating solution by rapid exchange using microfluidic reactor
Takeyasu Saito, Yutaka Miyamoto, Sunao Hattori, Naoki Okamoto, Kazuo Kondo (Osaka Prefecture Univ.)

----- Break ( 25 min. ) -----

(7) 14:55 - 15:25
Formation of conformal barrier layer by electroless plating for TSV of 3D-LSI
Ryohei Arima, Hiroshi Miyake, Fumihiro Inoue, Tomohiro Shimizu, Shoso Shingubara (Kansai Univ.)

(8) 15:25 - 15:55
Influence of Via Stress on Surface Micro-roughness-induced Leakage Current in Through-Silicon Via Interconnects
Hideki Kitada (Univ. of Tokyo/Fujitsu Lab.), Nobuhide Maeda, Koji Fujimoto, Shoichi Kodama, Young Suk Kim (Univ. of Tokyo), Yoriko Mizushima (Univ. of Tokyo/Fujitsu Lab.), Tomoji Nakamura (Fujitsu Lab.), Takayuki Ohba (Univ. of Tokyo)

(9) 15:55 - 16:25
Characterization of Local Strain around Through Silicon Via Interconnect in Wafer-on-wafer Structures
Osamu Nakatsuka (Nagoya Univ.), Hideki Kitada, Young Suk Kim (Univ. of Tokyo), Yoriko Mizushima, Tomoji Nakamura (Fujitsu Lab.), Takayuki Ohba (Univ. of Tokyo), Shigeaki Zaima (Nagoya Univ.)

----- Closing Address ( 5 min. ) -----

# Information for speakers
General Talk will have 25 minutes for presentation and 5 minutes for discussion.

# CONFERENCE SPONSORS:
- This conference is co-sponsored by The Japan Society of Applied Physics.

=== Technical Committee on Silicon Device and Materials (SDM) ===
# FUTURE SCHEDULE:

Fri, Apr 27, 2012 - Sat, Apr 28, 2012: Okinawa-Ken-Seinen-Kaikan Bldg. [Fri, Feb 10], Topics: Advanced Thin-Film Devices (Si, Compound, Organic) and Related Topics
Thu, May 17, 2012 - Fri, May 18, 2012: VBL, Toyohashi Univ. of Technol. [Wed, Mar 14]
Thu, Jun 21, 2012: VBL, Nagoya Univ. [Wed, Apr 11], Topics: Science and Technology for Dielectric Thin Films for Electron Devices
Wed, Jun 27, 2012 - Fri, Jun 29, 2012: Okinawa Seinen-kaikan [Fri, Apr 20], Topics: 2012 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices

# SECRETARY:
Yukinori Ono(NTT)
Tel 046-240-2641 Fax 046-240-4317
E-mail: o