Fri, Jun 15 PM
13:00 - 17:30 |
| (1) |
13:00-13:25 |
0.10 um Ion-Implanted GaAs MESFETs with Low Cost Production Process |
Masataka Watanabe, Daiji Fukushi, Hiroshi Yano, Shigeru Nakajima (Eudyna Devices) |
| (2) |
13:25-13:50 |
A High Power and High Breakdown Voltage Millimeter-Wave GaAs pHEMT with Low Nonlinear Drain Resistance |
Hirotaka Amasuga, Akira Inoue, Seiki Goto, Tetsuo Kunii, Yoshitsugu Yamamoto, Tomoki Oku, Takahide Ishikawa (Mitsubishi Electric) |
| (3) |
13:50-14:15 |
Study of localized spins in Be delta-doped GaAs structure |
J.p. Noh, D.w. Jung, A. z. m. Touhidul Islam, Nobuo Otauka (JAIST) |
| |
14:15-14:25 |
Break ( 10 min. ) |
| (4) |
14:25-14:50 |
Epitaxial lift-off of InAs thin films and their van der Waals bonding on SiO2/Si wafers |
Hayato Takita, Yonkil Jeong, Jun-ya Arita, Toshi-kazu Suzuki (JAIST) |
| (5) |
14:50-15:15 |
Growth of Insb films on Si(111) surface by 2-step growth |
Kazunori Murata, Norsuryati Binti Ahmad, Yu Tamura, Masayuki Mori, Toyokazu Tambo, Koichi Maezawa (Univ of Toyama) |
| (6) |
15:15-15:40 |
Formation of high quality InSb film via InSb bi-layer on Si substrate |
Mitsufumi Saito, Masayuki Mori, Yuji Yamasita, Toyokazu Tambo, Koichi Maezawa (Univ. of Toyama) |
| |
15:40-15:50 |
Break ( 10 min. ) |
| (7) |
15:50-16:15 |
DC characteristics of HBT with buried SiO2 wires in collector |
Shinnosuke Takahashi, Tsukasa Miura, Hiroaki Yamashita (Tokyo Tech), Yasuyuki Miyamoto, Kazuhito Furuya (Tokyo Tech/JST-CREST) |
| (8) |
16:15-16:40 |
MOVPE growth of high-quality InP-based resonant tunneling diodes |
Hiroki Sugiyama, Hideaki Matsuzaki, Yasuhiro Oda, Haruki Yokoyama, Takatomo Enoki, Takashi Kobayashi (NTT) |
| (9) |
16:40-17:05 |
Study for implementation of integrated gyrators by using resonant tunneling diodes |
Michihiko Suhara, Eri Ueki, Tsugunori Okumura (Tokyo Metro. Univ.) |
| (10) |
17:05-17:30 |
Optical control of triple quantum disks on waveguide structure |
Masahito Yamaguchi, Minori Yokoi (Nagoya Univ.), Hidetoshi Takagi (Ube N.C.T.), Nobuhiko Sawaki (Nagoya Univ.) |
Sat, Jun 16 AM
09:30 - 12:25 |
| (11) |
09:30-10:10 |
[Invited Talk]
Current transport mechanism of metal/p-GaN contacts |
Kenji Shiojima (Fukui Univ.) |
| (12) |
10:10-10:35 |
Anodic oxidation on n-GaN surface using photoelectrochemical process |
Nanako Shiozaki, Tamotsu Hashizume (Hokkaido Univ.) |
| (13) |
10:35-11:00 |
Surface passivation of AlGaN/GaN HFETs by RF magnetron sputtering using AlN target |
Nariaki Tanaka (JAIST), Yasunobu Sumida (POWDEC), Toshi-kazu Suzuki (JAIST) |
| (14) |
11:00-11:25 |
Ion-Implanted GaN/AlGaN/GaN HEMTs with Extremely Low Gate Leakage Current |
Kazuki Nomoto, Taku Tajima (Hosei Univ.), Tomoyoshi Mishima (Hitachi Cable Ltd.), Masataka Satoh, Tohru Nakamura (Hosei Univ.) |
| |
11:25-11:35 |
Break ( 10 min. ) |
| (15) |
11:35-12:00 |
Electrical and structural properties of Al implanted 4H-SiC |
Masataka Satoh, Shingo Miyagawa, Takahiro Kudoh, Shohei Nagata, Taku Tajima, Tohru Nakamura (Hosei Univ.) |
| (16) |
12:00-12:25 |
Reverse characteristics of 4H-SiC PiN diode with Vanadium ion implanted guard-ring |
Shuichi Ono, Manabu Arai (NJRC) |
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