Wed, Aug 10 PM 13:00 - 17:25 |
(1) |
13:00-13:25 |
Dependence of AlN growth by pulsed laser deposition on orientation of Si substrate |
Daiki Suzuki, Tomoki Kumagai, Hideki Nakazawa (Hirosaki Univ.) |
(2) |
13:25-13:50 |
DLTS evaluation of carrier injection and emission properties in In(Ga)As stacked quantum dot structure |
Soitiro Suzuki, Shinya Sato, Takuro Iwasaki (Hirosaki Univ.), Takehiko Tawara, Kouta Tateno, Hideki Gotoh, Tetsuomi Sogawa (NTT), Hiroshi Okamoto (Hirosaki Univ.) |
(3) |
13:50-14:15 |
Direct Nitridation of SiC Surface and Characterization of Nitride/SiC Interface |
Takashi Sakai, Mitsunori Hemmi, Yusuke Murata, Shinichiro Suzuki, Tomohiko Yamakami, Rinpei Hayashibe, Kiichi Kamimura (Shinshu Univ.) |
(4) |
14:15-14:40 |
Photoluminescence characteristics of Ge, SiC nanodots capped by SiC layer |
Takashi Otani, Yutaka Anezaki, Sho Asano, Ariyuki Kato (Nagaoka Univ. Technol.), Yuzuru Narita (Yamagata Univ.), Hideki Nakazawa (Hirosaki Univ.), Takahiro Kato, Kanji Yasui (Nagaoka Univ. Technol.) |
(5) |
14:40-15:05 |
Single crystal growth and characterization of high-Tc superconductor Bi-2223 by TSFZ method |
Shintaro Adachi, Tomohiro Usui, Yuzo Hashimoto, Takao Watanabe (Hirosaki Univ.), Takenori Fujii (Tokyo Univ.) |
|
15:05-15:20 |
Break ( 15 min. ) |
(6) |
15:20-15:45 |
Properties of ZrBx Thin Films with Off-stoichiometry from ZrB2 Compound |
Mayumi B. Takeyama, Masaru Sato, Atsushi Noya (Kitami Inst. of Technol.) |
(7) |
15:45-16:10 |
Hydrogen effects on the properties of Si- and N-coincorporated diamond-like carbon films prepared by plasma-enhanced chemical vapor deposition |
Saori Okuno, Soshi Miura, Ryosuke Kamada, Hideki Nakazawa (Hirosaki Univ.) |
(8) |
16:10-16:35 |
Influence of B and N addition on the properties of DLC films prepared by pulsed laser deposition |
Yusuke Mohnai, Ryouichi Osozawa, Hideki Nakazawa (Hirosaki Univ) |
(9) |
16:35-17:00 |
Evaluation of interface state density of Ge-MIS structure by combination of conductance technique at low temperature and room temperature |
Takuro Iwasaki, Shinya Sato, Soitiro Suzuki, Toshiro Ono (Hirosaki Univ.), Yukio Fukuda (Tokyo Univ. of Science, Suwa,), Hiroshi Okamoto (Hirosaki Univ.) |
(10) |
17:00-17:25 |
Evaluation of Ge-MIS structure fabricated by ECR plasma techniques by DLTS and C-t measurement |
Shinya Sato, Takuro Iwasaki, Soitiro Suzuki, Toshiro Ono (Hirosaki Univ.), Yukio Fukuda (Tokyo Univ. of Science, Suwa), Hiroshi Okamoto (Hirosaki Univ.) |
Thu, Aug 11 AM 09:00 - 12:35 |
(11) |
09:00-09:25 |
Characterization of as-grown and annealed CuAlO2 films deposited by reactive sputtering |
Katsuya Abe, Takuya Yokomoto, Yosuke Maeda, Takumi Miyazawa (Shinshu Univ.) |
(12) |
09:25-09:50 |
Preparation of Transparent Conducting AZO Thin Films by RF Magnetron Sputtering |
Takeshi Umehara, Satoru Noge (Numazu NCT) |
(13) |
09:50-10:15 |
Uneven thermal decomposition of silicon oxide layer |
Yoshiharu Enta, Kano Ogawa, Takayuki Nagai (Hirosaki Univ.) |
(14) |
10:15-10:40 |
Growth kinetics of HfO2 atomic layer deposition invesitgated by IR absorption spectroscopy |
Fumihiko Hirose, , Takahiko Suzuki (Yamagata Univ) |
|
10:40-10:55 |
Break ( 15 min. ) |
(15) |
10:55-11:20 |
Development of OH-radical oxidation methods and their applications |
Motomu Degai, Masaaki Kurosawa, Katsuaki Momiyama, Takahiko Suzuki, Fumihiko Hirose (Yamagata Univ.) |
(16) |
11:20-11:45 |
Crystal Thin Film Growth Technique for Reducing the Effects of the Base Substrate |
Satoru Noge, Takeshi Umehara (Numazu NCT), Takehiko Uno (Kanagawa Inst. of Tech.) |
(17) |
11:45-12:10 |
Development of a Ubiquitous Processor Chip |
Harunobu Uchiumi, Takumi Ishihara, Naomichi Mimura, Tatsuya Takaki, Kazuki Narita, Masa-aki Fukase, Tomoaki Sato (Hirosaki univ.) |
(18) |
12:10-12:35 |
Analysis on effect of annealing on material properties in bulk heterojunction organic solar cells |
Akira Kurihara, Kazuki Yoshida, Takahiko Suzuki, Fumihiko Hirose (Yama Univ) |