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=============================================== Technical Committee on Component Parts and Materials (CPM) Chair: Yasushi Takemura (Yokohama National Univ.) Vice Chair: Yasushi Takano (Shizuoka Univ.) Secretary: Toshishige Shimamura (NTT), Katsuya Abe (Shinshu Univ.) Assistant: Koji Enbutsu (NTT), Tomomasa Sato (Kanagawa Univ.) DATE: Wed, Aug 10, 2011 13:00 - 17:25 Thu, Aug 11, 2011 09:00 - 12:35 PLACE: Hirosaki University(3 bunkyo-cho, Hirosaki, Aomori, 036-8561 Japan. http://www.hirosaki-u.ac.jp/english/map.html. Department of Electronics and Information Technology Prof. Hideki Nakazawa. +81-172-39-3559) TOPICS: ---------------------------------------- Wed, Aug 10 PM (13:00 - 17:25) ---------------------------------------- (1) 13:00 - 13:25 Dependence of AlN growth by pulsed laser deposition on orientation of Si substrate Daiki Suzuki, Tomoki Kumagai, Hideki Nakazawa (Hirosaki Univ.) (2) 13:25 - 13:50 DLTS evaluation of carrier injection and emission properties in In(Ga)As stacked quantum dot structure Soitiro Suzuki, Shinya Sato, Takuro Iwasaki (Hirosaki Univ.), Takehiko Tawara, Kouta Tateno, Hideki Gotoh, Tetsuomi Sogawa (NTT), Hiroshi Okamoto (Hirosaki Univ.) (3) 13:50 - 14:15 Direct Nitridation of SiC Surface and Characterization of Nitride/SiC Interface Takashi Sakai, Mitsunori Hemmi, Yusuke Murata, Shinichiro Suzuki, Tomohiko Yamakami, Rinpei Hayashibe, Kiichi Kamimura (Shinshu Univ.) (4) 14:15 - 14:40 Photoluminescence characteristics of Ge, SiC nanodots capped by SiC layer Takashi Otani, Yutaka Anezaki, Sho Asano, Ariyuki Kato (Nagaoka Univ. Technol.), Yuzuru Narita (Yamagata Univ.), Hideki Nakazawa (Hirosaki Univ.), Takahiro Kato, Kanji Yasui (Nagaoka Univ. Technol.) (5) 14:40 - 15:05 Single crystal growth and characterization of high-Tc superconductor Bi-2223 by TSFZ method Shintaro Adachi, Tomohiro Usui, Yuzo Hashimoto, Takao Watanabe (Hirosaki Univ.), Takenori Fujii (Tokyo Univ.) ----- Break ( 15 min. ) ----- (6) 15:20 - 15:45 Properties of ZrBx Thin Films with Off-stoichiometry from ZrB2 Compound Mayumi B. Takeyama, Masaru Sato, Atsushi Noya (Kitami Inst. of Technol.) (7) 15:45 - 16:10 Hydrogen effects on the properties of Si- and N-coincorporated diamond-like carbon films prepared by plasma-enhanced chemical vapor deposition Saori Okuno, Soshi Miura, Ryosuke Kamada, Hideki Nakazawa (Hirosaki Univ.) (8) 16:10 - 16:35 Influence of B and N addition on the properties of DLC films prepared by pulsed laser deposition Yusuke Mohnai, Ryouichi Osozawa, Hideki Nakazawa (Hirosaki Univ) (9) 16:35 - 17:00 Evaluation of interface state density of Ge-MIS structure by combination of conductance technique at low temperature and room temperature Takuro Iwasaki, Shinya Sato, Soitiro Suzuki, Toshiro Ono (Hirosaki Univ.), Yukio Fukuda (Tokyo Univ. of Science, Suwa,), Hiroshi Okamoto (Hirosaki Univ.) (10) 17:00 - 17:25 Evaluation of Ge-MIS structure fabricated by ECR plasma techniques by DLTS and C-t measurement Shinya Sato, Takuro Iwasaki, Soitiro Suzuki, Toshiro Ono (Hirosaki Univ.), Yukio Fukuda (Tokyo Univ. of Science, Suwa), Hiroshi Okamoto (Hirosaki Univ.) ---------------------------------------- Thu, Aug 11 AM (09:00 - 12:35) ---------------------------------------- (11) 09:00 - 09:25 Characterization of as-grown and annealed CuAlO2 films deposited by reactive sputtering Katsuya Abe, Takuya Yokomoto, Yosuke Maeda, Takumi Miyazawa (Shinshu Univ.) (12) 09:25 - 09:50 Preparation of Transparent Conducting AZO Thin Films by RF Magnetron Sputtering Takeshi Umehara, Satoru Noge (Numazu NCT) (13) 09:50 - 10:15 Uneven thermal decomposition of silicon oxide layer Yoshiharu Enta, Kano Ogawa, Takayuki Nagai (Hirosaki Univ.) (14) 10:15 - 10:40 Growth kinetics of HfO2 atomic layer deposition invesitgated by IR absorption spectroscopy Fumihiko Hirose, , Takahiko Suzuki (Yamagata Univ) ----- Break ( 15 min. ) ----- (15) 10:55 - 11:20 Development of OH-radical oxidation methods and their applications Motomu Degai, Masaaki Kurosawa, Katsuaki Momiyama, Takahiko Suzuki, Fumihiko Hirose (Yamagata Univ.) (16) 11:20 - 11:45 Crystal Thin Film Growth Technique for Reducing the Effects of the Base Substrate Satoru Noge, Takeshi Umehara (Numazu NCT), Takehiko Uno (Kanagawa Inst. of Tech.) (17) 11:45 - 12:10 Development of a Ubiquitous Processor Chip Harunobu Uchiumi, Takumi Ishihara, Naomichi Mimura, Tatsuya Takaki, Kazuki Narita, Masa-aki Fukase, Tomoaki Sato (Hirosaki univ.) (18) 12:10 - 12:35 Analysis on effect of annealing on material properties in bulk heterojunction organic solar cells Akira Kurihara, Kazuki Yoshida, Takahiko Suzuki, Fumihiko Hirose (Yama Univ) # Information for speakers General Talk will have 20 minutes for presentation and 5 minutes for discussion. # CONFERENCE SPONSORS: - This conference is co-sponsored by R&DC for Next Generation IT Technologies and Department of Electronics and Information Technology. === Technical Committee on Component Parts and Materials (CPM) === # FUTURE SCHEDULE: Thu, Aug 25, 2011 - Fri, Aug 26, 2011: Hokkaido Univ. [Tue, Jun 21] Fri, Sep 16, 2011: [Fri, Jul 22] Wed, Oct 26, 2011 - Thu, Oct 27, 2011 (tentative): Fukui Univ. [Mon, Aug 22] Thu, Nov 17, 2011 - Fri, Nov 18, 2011: Katsura Hall，Kyoto Univ. [Fri, Sep 16] Mon, Nov 28, 2011 - Wed, Nov 30, 2011: NewWelCity Miyazaki [Thu, Sep 1], Topics: Design Gaia 2010 -New Field of VLSI Design- # SECRETARY: Secretary Katsuya Abe TEL：026-269-5191 e-mail:abe   nshu-u Last modified: 2011-06-23 17:28:30 |
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