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=============================================== Technical Committee on Electron Device (ED) Chair: Tetsu Kachi (Toyota Central R&D Labs.) Vice Chair: Naoki Hara (Fujitsu Labs.) Secretary: Kunio Tsuda (Toshiba), Michihiko Suhara (Tokyo Metropolitan Univ.) Assistant: Tetsuzo Ueda (Panasonic), Seiya Kasai (Hokkaido Univ.) =============================================== Technical Committee on Component Parts and Materials (CPM) Chair: Yasushi Takemura (Yokohama National Univ.) Vice Chair: Yasushi Takano (Shizuoka Univ.) Secretary: Toshishige Shimamura (NTT), Katsuya Abe (Shinshu Univ.) Assistant: Koji Enbutsu (NTT), Tomomasa Sato (Kanagawa Univ.) =============================================== Technical Committee on Silicon Device and Materials (SDM) Chair: Tetsuro Endo (Tohoku Univ.) Vice Chair: Yasuo Nara (Fujitsu Semiconductor) Secretary: Yukinori Ono (NTT), Shintaro Nomura (Univ. of Tsukuba) Assistant: Yoshitaka Sasago (Hitachi) DATE: Thu, May 17, 2012 13:00 - 17:10 Fri, May 18, 2012 09:00 - 16:30 PLACE: Venture Business Laboratory, Toyohashi University of Technology(1-1, Hibarigaoka, Tempa-ku, Toyohashi-shi, 441-8580 Japan. http://www.tut.ac.jp/english/introduction/map.html. Dr. Hiroshi Okada. +81-532-44-6721) TOPICS: ---------------------------------------- Thu, May 17 PM (13:00 - 15:20) ---------------------------------------- (1) 13:00 - 13:40 [Invited Talk] Formation of One-Dimensionally Self-Aligned Si-based Quantum Dots and Its Application to Light Emitting Diodes Katsunori Makihara (Nagoya Univ.), Mitsuhisa Ikeda (Hiroshima Univ.), Seiichi Miyazaki (Nagoya Univ.) (2) 13:40 - 14:05 Improvement in crystalline quality of GaAsN alloy by high temperature growth Futoshi Fukami, Noriyuki Urakami, Hiroto Sekiguchi, Hiroshi Okada, Akihiro Wakahara (Toyohashi Univ. Tech.) (3) 14:05 - 14:30 Electrical properties of n- and p-type AlGaPN for dislocation-free light-emitting devices on Si substrate Hironari Ito, Keisuke Kumagai, Hiroto Sekiguchi, Hiroshi Okada, Akihiro Wakahara (Toyohashi Univ. of Tech.) (4) 14:30 - 14:55 Polarization properties in InGaN/GaN multiple quantum well on semipolar (1-101)GaN/Si Maki Kushimoto, Tomoyuki Tanikawa, Yoshio Honda, Masahito Yamaguchi, Hiroshi Amano (Nagoya Univ.) (5) 14:55 - 15:20 Growth-rate dependence of GaP structure grown Si substrates using metalorganic vapor phase epitaxy Tatsuya Takagi, Shunshin Ka, Ryo Miyahara, Yasushi Takano (Shizuoka Univ.) ----- Break ( 10 min. ) ----- ---------------------------------------- Thu, May 17 PM (15:30 - 17:10) ---------------------------------------- (6) 15:30 - 15:55 A Surface-stress Sensor Based on a MEMS Fabry-Perot Interferometer for Label-free Protein Detection Kazuhiro Takahashi, Hiroki Oyama, Nobuo Misawa, Koichi Okumura, Makoto Ishida, Kazuaki Sawada (Toyohashi Tech.) (7) 15:55 - 16:20 Fabrication and transmit-receive characteristics of ultrasonic transducers array using epitaxial PZT thin films on γ-Al2O3/Si substrates Katsuya Ozaki, Masato Nishimura, Keisuke Suzuki, Yasuyuki Numata (Toyohashi tech.), Nagaya Okada (Honda Electronics), Daisuke Akai, Makoto Ishida (Toyohashi tech.) (8) 16:20 - 16:45 Fabrication of portable hydrogen sensors based on photochemically deposited SnO2 thin films Dengbaoleer Ao, Yukihisa Moriguchi, Masaya Ichimura (Nagoya Inst. of Tech.Univ) (9) 16:45 - 17:10 Preparation and evaluation of Ga2O3 oxygen sensors Masaaki Isai, Takahiro Yamamoto, Takuma Tori (Shizuoka Univ.) ---------------------------------------- Fri, May 18 AM (09:00 - 10:15) ---------------------------------------- (10) 09:00 - 09:25 High Open Circuit Voltage Gain in Vertical InGaAs Channel Metal-Insulator-Semiconductor Field-Effect Transistor Using Heavily Doped Drain Region and Narrow Channel Mesa Masashi Kashiwano, Jun Hirai, Shunsuke Ikeda, Motohiko Fujimatsu, Yasuyuki Miyamoto (TITech) (11) 09:25 - 09:50 Interface characterization of GaN-based MOS heterostructures employing ICP-etched AlGaN surfaces Zenji Yatabe, Yujin Hori, Sungsik Kim, Tamotsu Hashizume (Hokkaido Univ.) (12) 09:50 - 10:15 Evaluation of GaN substrates for vertical GaN power device applications Tetsu Kachi, Tsutomu Uesugi (Toyota RDL) ----- Break ( 10 min. ) ----- ---------------------------------------- Fri, May 18 AM (10:25 - 12:05) ---------------------------------------- (13) 10:25 - 10:50 Electrical Property of n-type GaPN:S Grown by Alternately N Supplied Organometallic Vapor Phase Epitaxy Yuya Nagamoto, Katsuhiko Matsuoka, Hiroto Sekiguchi, Hiroshi Okada, Akihiro Wakahara (TUT) (14) 10:50 - 11:15 Low temperature crystallization of SiC films by metal induced growth technique Katsuya Abe, Ryohei Ushikusa, Yuya Sakaguchi, Takuu Syu, Tomohiko Yamakami (Shinshu Univ.) (15) 11:15 - 11:40 Characterization of recombination centers in p-type 4H-SiC induced by low-energy electron irradiation Kazuki Yoshihara, Masashi Kato, Masaya Ichimura (NIT), Tomoaki Hatayama (NAIST), Takeshi Ohshima (JAEA) (16) 11:40 - 12:05 Growth and characterization of strained Ge epitaxial layers on SiGe substrates Takashi Yamaha, Osamu Nakatsuka (Nagoya Univ.), Kyoichi Kinoshita, Shinichi Yoda (JAXA), Shigeaki Zaima (Nagoya Univ.) ----- Lunch Break ( 55 min. ) ----- ---------------------------------------- Fri, May 18 PM (13:00 - 14:40) ---------------------------------------- (17) 13:00 - 13:25 Influences of Crystal Structure and Orientation on Band Offsets at the CdS/Cu2ZnSnS4 Interface by First Principles Study Wujisiguleng Bao, Masaya Ichimura (Nagoya Inst. of Tech) (18) 13:25 - 13:50 Electrodeposition of Ga2O3 Thin Films from Aqueous Gallium Sulfate Solutions Junie Jhon M. Vequizo, Masaya Ichimura (Nagoya Inst. of Tech.) (19) 13:50 - 14:15 H2O2 treatment of the Cu2O thin films deposited by the electrochemical method Ying Song, Masaya Ichimura (Nagoya Inst. of Tech.) (20) 14:15 - 14:40 Characterization of Local Electronic Transport and Electronic Emission Properties of Pillar-Shaped Si Nanostructures Daichi Takeuchi, Katsunori Makihara (Nagoya Univ.), Mitsuhisa Ikeda (Hiroshima Univ.), Seiichi Miyazaki (Nagoya Univ.), Hirokazu Kaki, Tsukasa Hayashi (NISSIN ELECTRIC Co. Ltd.) ----- Break ( 10 min. ) ----- ---------------------------------------- Fri, May 18 PM (14:50 - 16:30) ---------------------------------------- (21) 14:50 - 15:15 Preparation and evaluation of LiMn2O4 films prepared by sputtering method Akio Niwa, Masaaki Isai, Mitsuhiro Nakamura, Takashi Noguchi (Shizuoka Univ.) (22) 15:15 - 15:40 Co-catalyitic effect on improving the photocatalytic properties of TiO2 films Masaaki Isai, Ikuta Nakamura, Yuuki Hieda, Fumiya Fukazawa (Shizuoka Univ.), Yoichi Hoshi (Tokyo Polytech.Univ.) (23) 15:40 - 16:05 A tunable color filter based on sub-wavelength gratings using electrostatic microactuator Hiroaki Honma, Hajime Miyao, Kazuhiro Takahashi, Makoto Ishida, Kazuaki Sawada (Toyohashi Tech.) (24) 16:05 - 16:30 Analysis of Optical Frequency Signal Transmission through Whispering Gallery Mode Masashi Fukuhara, Yenling Yu, Takuma Aihara, Kyohe Nakagawa, Hirotaka Yamashita (Toyohashi Univ. of Tech.), Kenzo Yamaguchi (Kagawa Univ.), Mitsuo Fukuda (Toyohashi Univ. of Tech.) # Information for speakers Invited Talk will have 35 minutes for presentation and 5 minutes for discussion. General Talk will have 20 minutes for presentation and 5 minutes for discussion. # CONFERENCE SPONSORS: - This conference is co-sponsored by The Japan Society of Applied Physics and cooperated by VBL, Toyohashi University of Technology === Technical Committee on Electron Device (ED) === # FUTURE SCHEDULE: Wed, Jun 27, 2012 - Fri, Jun 29, 2012: Okinawa Seinen-kaikan [Fri, Apr 20], Topics: 2012 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices Thu, Jul 26, 2012 - Fri, Jul 27, 2012: Fukui University [Tue, May 22], Topics: Semiconductor Process and Devices (surface, interface, reliability), others # SECRETARY: Hara Naoki （Fujitsu Lab.） TEL : +81-46-250-8242、FAX : +81-46-250-8168 E-mail :     o       Kunio Tsuda（Toshiba） TEL : +81-44-549-2142、FAX : +81-44-520-1501 E-mail :   o   ba Michihiko Suhara (Tokyo Metropolitan Univ.) TEL : +81-42-677-2765 Fax : +81-42-677-2756 E-mail :      t  Tetsuzo Ueda（Panasonic) TEL：+81-75-956-8273、FAX：+81-75-956-9110 E-mail：   zopa c=== Technical Committee on Component Parts and Materials (CPM) === # FUTURE SCHEDULE: Fri, Jun 22, 2012: Kikai-Shinko-Kaikan Bldg. [Mon, Apr 9] Fri, Jun 22, 2012: Kikai-Shinko-Kaikan Bldg. [Mon, Apr 16], Topics: Summer meeting for materials and devices Wed, Aug 8, 2012 - Thu, Aug 9, 2012: [Thu, Jun 21] Thu, Aug 23, 2012 - Fri, Aug 24, 2012: Tohoku Univ. [Fri, Jun 15] === Technical Committee on Silicon Device and Materials (SDM) === # FUTURE SCHEDULE: Thu, Jun 21, 2012: VBL, Nagoya Univ. [Wed, Apr 11], Topics: Science and Technology for Dielectric Thin Films for Electron Devices Wed, Jun 27, 2012 - Fri, Jun 29, 2012: Okinawa Seinen-kaikan [Fri, Apr 20], Topics: 2012 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices Thu, Aug 2, 2012 - Fri, Aug 3, 2012: Sapporo Center for Gender Equality, Sapporo, Hokkaido [Mon, May 14], Topics: Low-power, low-voltage device and circuit technology # SECRETARY: Yukinori Ono(NTT) Tel 046-240-2641 Fax 046-240-4317 E-mail: o      Last modified: 2012-04-10 19:02:44 |
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