Fri, Dec 7
10:00 - 17:00 |
| (1) |
10:00-10:15 |
Fabrication of ultrahigh-voltage SiC PiN diodes with low-on resistance |
Naoki Kaji, Hiroki Niwa, Jun Suda, Tsunenobu Kimoto (Kyoto Univ.) |
| (2) |
10:15-10:30 |
Plasmaless etching of silicon carbide using chlorine based gas |
Tomoaki Hatayama, Ryouta Hori, Tetsuya Tamura, Hiroshi Yano, Takashi Fuyuki (NAIST) |
| (3) |
10:30-10:45 |
Change of Scattering Mechanisms of Holes in SiC by Electron Irradiation |
Kohji Murata, Tatsuya Morine, Hideharu Matsuura (Osaka Electro-Communication Univ), Shinobu Onoda, Takeshi Ohshima (JAEA) |
| (4) |
10:45-11:00 |
Effects of phosphorus incorporation into SiO2/SiC interface on electrical properties of MOS capacitors fabricated on 4H-SiC(11-20) |
Nao Umezawa, Hiroshi Yano, Tomoaki Hatayama, Takashi Fuyuki (NAIST) |
| (5) |
11:00-11:15 |
Surface Modification of Glass Substrate by Ion Beam Irradiation of Ionic Liquid BMIM-PF6 |
Mitsuaki Takeuchi, Takuya Hamaguchi, Hiromichi Ryuto, Gikan H. Takaoka (Kyoto Univ.) |
| (6) |
11:15-11:30 |
Molecular mass dependence of irradiation effects on silicon surface by normal hydrocarbon ion beams |
Kosuke Imanaka, Mitsuaki Takeuchi, Hiromichi Ryuto, Gikan H. Takaoka (Kyoto Univ.) |
| (7) |
11:30-11:45 |
Study of carrier behavior in memory transistor using DNA |
Shoko Maeno, Naoto Matsuo, Kazushige Yamana, Akira Heya, Tadao Takada (Univ. of Hyogo) |
| (8) |
11:45-12:00 |
Delivery process of gold nanoparticles using protein and its plasmon characteristics |
Satoshi Saijo, Yasuaki Ishikawa, Bin Zheng, Ichiro Yamashita, Yukiharu Uraoka (NAIST) |
| |
12:00-13:00 |
Lunch Break ( 60 min. ) |
| (9) |
13:00-13:15 |
Neural Network using Thin-Film Transistors
-- Working Confirmation of Asymmetric Circuit -- |
Mutsumi Kimura, Yuki Yamaguchi, Ryohei Morita, Yusuke Fujita, Tomoaki Miyatani, Tomohiro Kasakawa (Ryukoku Univ.) |
| (10) |
13:15-13:30 |
Retinal Prosthesis of Frequency Modulation using Thin Film Photo Transistors |
Takayuki Kadonome, Atsushi Matsumura, Tsuyoshi Higashiyama, Shohei Oyama, Mutsumi Kimura (Ryukoku Univ.) |
| (11) |
13:30-13:45 |
Theoretical Analysis of Degradation Phenomena in a-Oxide TFT by Device Simulation |
Satoshi Urakawa, Yoshihiro Ueoka, Haruka Yamazaki, Yasuaki Ishikawa, Yukiharu Uraoka (NAIST) |
| (12) |
13:45-14:00 |
Design for inexpensive Detector (Silicon Drift Detector) |
Ryota Okada, Kazuki Matsutani, Hideharu Matsuura (Osaka Electro-Communication Univ.) |
| (13) |
14:00-14:15 |
Depth analysis of ultra-shallow junctions by photoluminescence with the aid of nano-scale wet etching |
Gota Murai, Masashi Okutani, Syuji Tagawa, Masahiro Yoshimoto (Kyoto Inst. Tech.), Woo Sik Yoo (WaferMasters) |
| (14) |
14:15-14:30 |
Photovoltaic characteristics of depth controled the emitter layer and selective emitter layer formed by laser doping |
Shigeaki Tanaka, Hideki Nishimura, Takashi Fuyuki (NAIST) |
| (15) |
14:30-14:45 |
Improvement of the electronic states by controlling the interface between dopant and substrate in laser doping for textured silicon |
Hideki Nishimura, Shigeaki Tanaka, Shota Morisaki, Shingo Yumoto, Takashi Fuyuki (NAIST) |
| (16) |
14:45-15:00 |
Fabrication of N-type Silicon Solar Cells by Laser Doping Method for High Efficiency |
Shota Morisaki, Hideki Nishimura, Emi Sugimura, Takashi Fuyuki (NAIST) |
| |
15:00-15:15 |
Break ( 15 min. ) |
| (17) |
15:15-15:30 |
Optimization of a crystalline silicon solar cell which has the high concentration impurities layer under an electrode formed by continuous wave laser. |
Shingo Yumoto, Hideki Nishimura, Kenji Hirata, Emi Sugimura, Takashi Fuyuki (NAIST) |
| (18) |
15:30-15:45 |
Improvement of conversion efficiency for solar cell with MOS structure. |
Takahiro Kobayashi, Naoto Matsuo, Akira Heya (Univ. of Hyogo) |
| (19) |
15:45-16:00 |
Electric Characteristic of Crystalline Silicon Solar Cells using Electroluminescence Imaging under Reverse-based |
Emi Sugimura, Shigekazu Shimazaki, Ayumi Tani, Takashi Fuyuki (NAIST) |
| (20) |
16:00-16:15 |
Fabrication of Ferroelectric Microstructures by Proton Beam Irradiation |
Masaki Yamaguchi, Kazuki Watanabe (Shibaura Inst. of Tech.), Yoichiro Masuda (Hachinohe Inst. of Tech.) |
| (21) |
16:15-16:30 |
Correlation between parameters related to reset speed in HfO2 Conducting-Bridge memory |
Shigeyuki Tsuruta, Kentaro Kinoshita, Sho Hasegawa, Yutaro Enomoto, Satoru Kishida (Tottori Univ.) |
| (22) |
16:30-16:45 |
Memory characteristics of ReRAM filament confined in localized area. |
Sang-gyu Koh, Kentaro Kinoshita, Takahiro Fukuhara, Yusuke Sawai, Satoru Kishida (Tottori Univ.) |
| (23) |
16:45-17:00 |
Effects of electrode materials on resistive switching characteristics of Metal/TiO2/Metal stack structures |
Naoki Okimoto, Tatsuya Iwata, Yusuke Nishi, Tsunenobu Kimoto (Kyoto Univ,) |