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Technical Committee on Silicon Device and Materials (SDM)
Chair: Yasuo Nara (Fujitsu Semiconductor) Vice Chair: Yuzou Oono (Univ. of Tsukuba)
Secretary: Shintaro Nomura (Univ. of Tsukuba), Yoshitaka Sasago (Hitachi)
DATE:
Fri, Dec 7, 2012 10:00 - 17:00
PLACE:
A1-001, Katsura Campus, Kyoto University(Katsura, Nishikyo, Kyoto 615-8510, Japan. http://www.kyoto-u.ac.jp/ja/access/campus/map6r_k.htm. Prof. Tsunenobu Kimoto. +81-75-383-2300)
TOPICS:
Fabrication and Characterization of Si-related Materials and Devices
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Fri, Dec 7 (10:00 - 17:00)
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(1) 10:00 - 10:15
Fabrication of ultrahigh-voltage SiC PiN diodes with low-on resistance
Naoki Kaji, Hiroki Niwa, Jun Suda, Tsunenobu Kimoto (Kyoto Univ.)
(2) 10:15 - 10:30
Plasmaless etching of silicon carbide using chlorine based gas
Tomoaki Hatayama, Ryouta Hori, Tetsuya Tamura, Hiroshi Yano, Takashi Fuyuki (NAIST)
(3) 10:30 - 10:45
Change of Scattering Mechanisms of Holes in SiC by Electron Irradiation
Kohji Murata, Tatsuya Morine, Hideharu Matsuura (Osaka Electro-Communication Univ), Shinobu Onoda, Takeshi Ohshima (JAEA)
(4) 10:45 - 11:00
Effects of phosphorus incorporation into SiO2/SiC interface on electrical properties of MOS capacitors fabricated on 4H-SiC(11-20)
Nao Umezawa, Hiroshi Yano, Tomoaki Hatayama, Takashi Fuyuki (NAIST)
(5) 11:00 - 11:15
Surface Modification of Glass Substrate by Ion Beam Irradiation of Ionic Liquid BMIM-PF6
Mitsuaki Takeuchi, Takuya Hamaguchi, Hiromichi Ryuto, Gikan H. Takaoka (Kyoto Univ.)
(6) 11:15 - 11:30
Molecular mass dependence of irradiation effects on silicon surface by normal hydrocarbon ion beams
Kosuke Imanaka, Mitsuaki Takeuchi, Hiromichi Ryuto, Gikan H. Takaoka (Kyoto Univ.)
(7) 11:30 - 11:45
Study of carrier behavior in memory transistor using DNA
Shoko Maeno, Naoto Matsuo, Kazushige Yamana, Akira Heya, Tadao Takada (Univ. of Hyogo)
(8) 11:45 - 12:00
Delivery process of gold nanoparticles using protein and its plasmon characteristics
Satoshi Saijo, Yasuaki Ishikawa, Bin Zheng, Ichiro Yamashita, Yukiharu Uraoka (NAIST)
----- Lunch Break ( 60 min. ) -----
(9) 13:00 - 13:15
Neural Network using Thin-Film Transistors
-- Working Confirmation of Asymmetric Circuit --
Mutsumi Kimura, Yuki Yamaguchi, Ryohei Morita, Yusuke Fujita, Tomoaki Miyatani, Tomohiro Kasakawa (Ryukoku Univ.)
(10) 13:15 - 13:30
Retinal Prosthesis of Frequency Modulation using Thin Film Photo Transistors
Takayuki Kadonome, Atsushi Matsumura, Tsuyoshi Higashiyama, Shohei Oyama, Mutsumi Kimura (Ryukoku Univ.)
(11) 13:30 - 13:45
Theoretical Analysis of Degradation Phenomena in a-Oxide TFT by Device Simulation
Satoshi Urakawa, Yoshihiro Ueoka, Haruka Yamazaki, Yasuaki Ishikawa, Yukiharu Uraoka (NAIST)
(12) 13:45 - 14:00
Design for inexpensive Detector (Silicon Drift Detector)
Ryota Okada, Kazuki Matsutani, Hideharu Matsuura (Osaka Electro-Communication Univ.)
(13) 14:00 - 14:15
Depth analysis of ultra-shallow junctions by photoluminescence with the aid of nano-scale wet etching
Gota Murai, Masashi Okutani, Syuji Tagawa, Masahiro Yoshimoto (Kyoto Inst. Tech.), Woo Sik Yoo (WaferMasters)
(14) 14:15 - 14:30
Photovoltaic characteristics of depth controled the emitter layer and selective emitter layer formed by laser doping
Shigeaki Tanaka, Hideki Nishimura, Takashi Fuyuki (NAIST)
(15) 14:30 - 14:45
Improvement of the electronic states by controlling the interface between dopant and substrate in laser doping for textured silicon
Hideki Nishimura, Shigeaki Tanaka, Shota Morisaki, Shingo Yumoto, Takashi Fuyuki (NAIST)
(16) 14:45 - 15:00
Fabrication of N-type Silicon Solar Cells by Laser Doping Method for High Efficiency
Shota Morisaki, Hideki Nishimura, Emi Sugimura, Takashi Fuyuki (NAIST)
----- Break ( 15 min. ) -----
(17) 15:15 - 15:30
Optimization of a crystalline silicon solar cell which has the high concentration impurities layer under an electrode formed by continuous wave laser.
Shingo Yumoto, Hideki Nishimura, Kenji Hirata, Emi Sugimura, Takashi Fuyuki (NAIST)
(18) 15:30 - 15:45
Improvement of conversion efficiency for solar cell with MOS structure.
Takahiro Kobayashi, Naoto Matsuo, Akira Heya (Univ. of Hyogo)
(19) 15:45 - 16:00
Electric Characteristic of Crystalline Silicon Solar Cells using Electroluminescence Imaging under Reverse-based
Emi Sugimura, Shigekazu Shimazaki, Ayumi Tani, Takashi Fuyuki (NAIST)
(20) 16:00 - 16:15
Fabrication of Ferroelectric Microstructures by Proton Beam Irradiation
Masaki Yamaguchi, Kazuki Watanabe (Shibaura Inst. of Tech.), Yoichiro Masuda (Hachinohe Inst. of Tech.)
(21) 16:15 - 16:30
Correlation between parameters related to reset speed in HfO2 Conducting-Bridge memory
Shigeyuki Tsuruta, Kentaro Kinoshita, Sho Hasegawa, Yutaro Enomoto, Satoru Kishida (Tottori Univ.)
(22) 16:30 - 16:45
Memory characteristics of ReRAM filament confined in localized area.
Sang-gyu Koh, Kentaro Kinoshita, Takahiro Fukuhara, Yusuke Sawai, Satoru Kishida (Tottori Univ.)
(23) 16:45 - 17:00
Effects of electrode materials on resistive switching characteristics of Metal/TiO2/Metal stack structures
Naoki Okimoto, Tatsuya Iwata, Yusuke Nishi, Tsunenobu Kimoto (Kyoto Univ,)
# Information for speakers
General Talk will have 10 minutes for presentation and 5 minutes for discussion.
=== Technical Committee on Silicon Device and Materials (SDM) ===
# FUTURE SCHEDULE:
Mon, Feb 4, 2013: Kikai-Shinko-Kaikan Bldg. [unfixed]
Wed, Feb 27, 2013 - Thu, Feb 28, 2013: Hokkaido Univ. [Fri, Dec 7], Topics: Functional nanodevices and related technologies
Last modified: 2012-10-20 22:31:52
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