Wed, Jan 17 09:45 - 17:45 |
(1) |
09:45-10:10 |
Reduced Gain Variation against Temperature with NTC Thermistor on HPA Module for W-CDMA System |
Akira Kuriyama (CRL), Shigehiro Yuyama (Renesas), Masami Ohnishi, Hidetoshi Matsumoto (CRL), Tomonori Tanoue, Isao Ohbu (Renesas) |
(2) |
10:10-10:35 |
Vdd Gate Biasing RF CMOS Amplifier Design Technique Based on the Effect of Carrier Velocity Saturation |
Noboru Ishihara (Gunma Univ.) |
(3) |
10:35-11:00 |
Design of Miniaturized Microstrip Lumped-Element Ultra-Wideband Bandpass Filters |
Zhewang Ma, Hiroaki Ishihara, Yoshio Kobayashi (Saitama Univ.), Tetsuo Anada (Kanagawa Univ.) |
|
11:00-11:10 |
Break ( 10 min. ) |
(4) |
11:10-11:35 |
Design of Compact Microstrip Bandpass Filters Using Lumped-Element Composite Resonators |
Zhewang Ma, Hisayoshi Abe, Yoshio Kobayashi (Saitama Univ.), Tetsuo Anada (Kanagawa Univ.) |
(5) |
11:35-12:00 |
Novel Triple-band Bandpass Filter Using Composite Resonator |
Taichi Shimizu, Zhewang Ma, Yoshio Kobayashi (Saitama Univ.), Tetsuo Anada (Kanagawa Univ.) |
|
12:00-13:30 |
Break ( 90 min. ) |
(6) |
13:30-13:55 |
- |
Shin Matsumoto (UEC), Yukihiro Shimakata, Mitsuyuki Yamauchi (TAIYO YUDEN), Koji Wada, Takashi Iwasaki (UEC) |
(7) |
13:55-14:20 |
- |
Nobuhiko Okuzaki (UEC), Yukihiro Shimakata, Mitsuyuki Yamauchi (TAIYO YUDEN), Koji Wada, Takashi Iwasaki (UEC) |
(8) |
14:20-14:45 |
Submillimeter Wave Radiation Characteristics from a Periodic Metal Structure on Solid-State Plasma |
Kazuya Doi, Shinichi Yodokawa, Satoru Kousaka, Tetsuo Obunai (Akita Univ.) |
|
14:45-14:55 |
Break ( 10 min. ) |
(9) |
14:55-15:20 |
Ku-band Oscillators with Reflection Type Zero-th Order Resonator |
Hiroyuki Mizutani, Masaomi Tsuru, Kenji Kawakami, Tamotsu Nishino, Moriyasu Miyazaki (Mitsubishi Electric Corp.) |
(10) |
15:20-15:45 |
A Fundamental Study on Improving Near Out-of-Band Characteristics of BPF Using Branch-Stub Resonators |
Takenori Yasuzumi, Takanobu Ohno, Osamu Hashimoto (Aoyama Gakuin Univ.), Koji Wada (The Univ. of Electron-Communications) |
(11) |
15:45-16:10 |
Band-Switching Multi-band Isolator |
Takayuki Furuta, Atsushi Fukuda, Hiroshi Okazaki, Shoichi Narahashi (NTT DOCOMO) |
(12) |
16:10-16:35 |
development of CP-MCT used for in vivo mesasurement of arms or legs (without presentation) |
Takashi Ishiguro, Naoyuki Iwata, Yuki Mitsuboshi, Yasuaki Miyazaki, Michio Miyakawa (Niigata Univ.) |
|
16:35-16:45 |
Break ( 10 min. ) |
(13) |
16:45-17:45 |
[Special Talk]
A Report on the 36th European Microwave Conference |
Tomohiro Seki, Hideki Kamitsuna (NTT), Atsushi Fukuda (NTT DoCoMo), Takayuki Tanaka (Saga University), Tamotsu Nishino, Kenichi Miyaguchi (Mitsubishi Electric Corporation), Chun-Ping Chen (Kanagawa University), Shinya Sugiura (Toyota Central R&D Labs., Inc.), Yasuhiro Kazama (Japan Radio CO.,Ltd.) |
Thu, Jan 18 09:45 - 17:05 |
(14) |
09:45-10:10 |
- - |
Nguyen Quoc Dinh, Nguyen Thanh, Toshihisa Kamei, Yozo Utsumi (NDA) |
(15) |
10:10-10:35 |
- |
Takehiko Maeda, Toshihisa Kamei, Yozo Utsumi (NDA) |
(16) |
10:35-11:00 |
* |
Takeshi Izuho, Futoshi Kuroki (Kure Nat'l Coll of Tech), Tsukasa Yoneyama (Tohoku Inst of Tech) |
|
11:00-11:10 |
Break ( 10 min. ) |
(17) |
11:10-11:35 |
* |
Futoshi Kuroki, Hiroshi Ohta (Kure Nat'l Coll of Tech) |
(18) |
11:35-12:00 |
* |
Futoshi Kuroki, Hiroshi Ohta (Kure Nat'l Coll of Tech) |
|
12:00-13:00 |
Break ( 60 min. ) |
(19) |
13:00-13:25 |
* |
Futoshi Kuroki, Kazuya Miyamoto, Ryo-ta Masumoto, Ryo-ji Tamaru (Kure Nat'l Coll of Tech) |
(20) |
13:25-13:50 |
* |
Futoshi Kuroki, Kazuya Miyamoto (Kure Nat'l Coll of Tech) |
(21) |
13:50-14:15 |
Characterization of coupling coefficient of microwave resonators by FDTD method |
Kenji Suzuki, Tetsuya Ishida, Ikuo Awai (Ryukoku Univ.) |
(22) |
14:15-14:40 |
- |
Tatsuya Fukunaga (TDK), Koji Wada (UEC) |
|
14:40-14:50 |
Break ( 10 min. ) |
(23) |
14:50-15:15 |
A study on material measurement methods using FDTD simulation techniques
-- Measurements of surface resistance of metals and dielectric plates including semiconductor wafer in millimeter-wave range -- |
Yukio Iida, Koichi Nakao, Yasuhisa Omura, Susumu Tamura (Kansai Univ.) |
(24) |
15:15-15:40 |
A Study on the Measurement of Complex Permittivity of Powder Using Low Melting Point Plastic |
Kenjiro Otsuka, Akihiro Sato, Osamu Hashimoto (Aoyama Gakuin Univ.) |
(25) |
15:40-16:05 |
A Study on Measurement of a Complex Relative Permittivity Tensor of High Lossy Material Using Lens Antennas |
Masanao Miyamoto, Osamu Hashimoto, Shinya Watanabe (Aoyama Univ.) |
|
16:05-16:15 |
Break ( 10 min. ) |
(26) |
16:15-16:40 |
Dual-Frequency Responsive Microwave Absorber for Wireless LAN Using a Plaster Board and Resistive Film |
Takuya Nakamura, Kenjiro Otsuka, Yuichi Sakumo, Osamu Hashimoto (Aoyama Gakuin Univ.) |
(27) |
16:40-17:05 |
A Study on Wave Absorber with Circular Lattice Using Rubber Sheet with Fine Weatherability |
Takeru Ozawa, Kouta Matsumoto, Yu Miura (Aoyama Gakuin Univ.), Osamu Okada (Bridgestone Corp.), Osamu Hashimoto (Aoyama Gakuin Univ.) |
Fri, Jan 19 09:45 - 17:05 |
(28) |
09:45-10:10 |
A 2.4-V Reference Voltage Operation InGaP-HBT MMIC Power Amplifier for CDMA Handsets |
Takao Moriwaki, Kazuya Yamamoto, Nobuyuki Ogawa, Takeshi Miura, Kosei Maemura, Teruyuki Shimura (Mitsubishi Electric) |
(29) |
10:10-10:35 |
A Distortion-Cancelled Doherty 28V Operated 330W GaAs Heterojunction FET Power Amplifier for Cellular Base Stations |
Isao Takenaka, Koji Ishikura, Hidemasa Takahashi, Koichi Hasegawa, Takashi Ueda, Toshimichi Kurihara, Kazunori Asano, Naotaka Iwata (NEC Electronics) |
(30) |
10:35-11:00 |
A 3.5 GHz low distortion high powr FET using GaAs on-chip harmonic tuning circuit |
Seiki Goto, Tetsuo Kunii, Akira Inoue (Mitsubishi Electric Corp.), Toshikazu Oue (WTI), Masaki Kohno, Tomoki Oku, Takahide Ishikawa (Mitsubishi Electric Corp.) |
|
11:00-11:10 |
Break ( 10 min. ) |
(31) |
11:10-11:35 |
A Nonlinear Drain Resistance Model for a High Power Millimeter-wave PHEMT |
Akira Inoue, Hirotaka Amasuga, Seiki Goto, Tetsuo Kunii, Tomoki Oku, Takahide Ishikawa (Mitsubishi) |
(32) |
11:35-12:00 |
A Miniaturized, Wideband 8x8 Switch Matrix MMIC Using InP HEMTs |
Hideki Kamitsuna (NTT), Yasuro Yamane (NEL), Masami Tokumitsu (NTT), Hirohiko Sugahara (NTT-AT), Takatomo Enoki (NTT) |
|
12:00-13:00 |
Break ( 60 min. ) |
(33) |
13:00-13:25 |
A 0/20-dB Step Attenuator Using GaAs-HBT Compatible, AC-Coupled, Stack-Type Base-Collector Diode Switches |
Kazuya Yamamoto, Miyo Miyashita, Nobuyuki Ogawa, Takeshi Miura, Teruyuki Shimura (Mitsubishi Electric) |
(34) |
13:25-13:50 |
Fabrication and Characterization of Schottky Wrap Gate Controlled AlGaN/GaN Nanowire FETs |
Takahiro Tamura, Junji Kotani, Seiya Kasai, Tamotsu Hashizume (Hokkaido Univ., RCIQE) |
(35) |
13:50-14:15 |
High-quality InAlN/GaN HEMT epi-wafer grown on Si (111) substrate by metalorganic chemical vapor deposition |
Noriyuki Watanabe, Haruki Yokoyama, Masanobu Hiroki, Yasuhiro Oda (NTT), Takuma Yagi (NTT-AT), Takashi Kobayashi (NTT) |
|
14:15-14:25 |
Break ( 10 min. ) |
(36) |
14:25-14:50 |
Improvement of Breakdown Voltage in Double-Heterojunction III-N FET with AlN Buffer Layer |
Hisayoshi Matsuo, Hiroaki Ueno, Tetsuzo Ueda, Tsuyoshi Tanaka (Matsushita Electric Industrial Co., Ltd.) |
(37) |
14:50-15:15 |
A Normally-off AlGaN/GaN Transistor with Low On-State Resistance Using Hole-Injection |
Yasuhiro Uemoto, Masahiro Hikita, Hiroaki Ueno, Hisayoshi Matsuo, Hidetoshi Ishida, Manabu Yanagihara, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda (Panasonic) |
(38) |
15:15-15:40 |
Current collapse of inslated-gate GaN-HEMT |
Masahito Kanamura, Toshihiro Ohki, Kenji Imanishi, Kozo Makiyama, Naoya Okamoto (Fujitsu, Fujitsu Labs.), Naoki Hara (Fujitsu Labs.), Toshihide Kikkawa, Kazukiyo Joshin (Fujitsu, Fujitsu Labs.) |
|
15:40-15:50 |
Break ( 10 min. ) |
(39) |
15:50-16:15 |
High Voltage and High Frequency( over10MHz) Class-E Power-Supplies Using a GaN-HEMT |
Wataru Saito (Toshiba Semiconductor), Tomokazu Domon, Kunio Tsuda (Toshiba R & D Center), Ichiro Omura (Toshiba Semiconductor) |
(40) |
16:15-16:40 |
Over 80W Output Power X-band AlGaN/GaN HEMT |
Keiichi Matsushita, Yasushi Kashiwabara, Kazutoshi Masuda, Hiroyuki Sakurai, Shinji Takatsuka, Kazutaka Takagi, Hisao Kawasaki, Yoshiharu Takada, Kunio Tsuda (Toshiba) |
(41) |
16:40-17:05 |
GaN-HEMT with high breakdown voltage and high fmax for millimeter-wave application |
Kozo Makiyama, Toshihiro Ohki, Kenji Imanishi, Masahito Kanamura (Fujitsu, Fujitsu Labs.), Naoki Hara (Fujitsu Labs.), Toshihide Kikkawa (Fujitsu, Fujitsu Labs.) |