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=============================================== Technical Committee on Electron Device (ED) Chair: Tetsu Kachi (Toyota Central R&D Labs.) Vice Chair: Naoki Hara (Fujitsu Labs.) Secretary: Kunio Tsuda (Toshiba), Michihiko Suhara (Tokyo Metropolitan Univ.) Assistant: Tetsuzo Ueda (Panasonic), Seiya Kasai (Hokkaido Univ.) =============================================== Technical Committee on Component Parts and Materials (CPM) Chair: Yasushi Takemura (Yokohama National Univ.) Vice Chair: Yasushi Takano (Shizuoka Univ.) Secretary: Toshishige Shimamura (NTT), Katsuya Abe (Shinshu Univ.) Assistant: Koji Enbutsu (NTT), Tomomasa Sato (Kanagawa Univ.) =============================================== Technical Committee on Lasers and Quantum Electronics (LQE) Chair: Tsukuru Katsuyama (Sumitomo Electric Industries) Vice Chair: Hiroyuki Tsuda (Keio Univ.) Secretary: Tomoyuki Miyamoto (Tokyo Inst. of Tech.), Kazunori Shinoda (Hitachi) DATE: Thu, Nov 17, 2011 10:05 - 18:00 Fri, Nov 18, 2011 09:30 - 15:55 PLACE: Katsura Hall, Katsura Campus, Kyoto Univ.(Kyoto-Daigaku-Katura, Nishikyo-ku, Kyoto 615-8530. Bus 15min from JR Katsuragawa st.http://www.t.kyoto-u.ac.jp/en/access/katsura/index.html?set_language=en) TOPICS: ---------------------------------------- Thu, Nov 17 AM (10:00 - 18:00) ---------------------------------------- ----- Opening Remarks ( 5 min. ) ----- (1) 10:05 - 10:30 AlN/GaN Short-Period Superlattice Coherently Grown on 6H-SiC (0001) Substrates by Molecular-Beam Epitaxy Ryosuke Kikuchi, Hironori Okumura, Tsunenobu Kimoto, Jun Suda (Kyoto Univ.) (2) 10:30 - 10:55 Control of interlayer on MOVPE growth of AlN on sapphire substrate Reina Miyagawa, Shibo Yang, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Takaaki Kuwahara, Noriyuki Kuwano, Masatoshi Mitsuhara (Kyushu Univ.) (3) 10:55 - 11:20 Etch-pit method of threading dislocations in epitaxial AlN films Takuya Nomura, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Yuuki Ryu, Takaaki Kuwahara, Noriyuki Kuwano (Kyusyu Univ.) (4) 11:20 - 11:45 Decreasing Dislocation Density of MOCVD-GaN Using Silicon Dioxide Masks Masaru Tanimoto, Shiro Sakai (Tokushima Univ.) ----- Lunch Break ( 70 min. ) ----- (5) 12:55 - 13:20 Realization of Freestanding GaN Substrates with High Surface Quality and Low Dislocation Density by Crystal Hardness Control Hajime Fujikura, Yuichi Oshima, Takehiro Yoshida, Takeshi Megro, Toshiya Saito (Hitachi Cable) (6) 13:20 - 13:45 Interface characterization of MOS structures fabricated on dry-etched GaN and AlGaN Sungsik Kim, Yujin Hori, Zenji Yatabe, Tamotsu Hashizume (Hokkaido Univ.) (7) 13:45 - 14:10 Surface Barrier Height Lowering at Above 540 K in AlInN/AlN/GaN Heterostructures Md. Tanvir Hasan, Hirokuni Tokuda, Masaaki Kuzuhara (Univ. of Fukui) (8) 14:10 - 14:35 Characterization of insulators and interfaces in GaN-based MIS-diodes Yasuhiro Iwata, Toshiharu Kubo, Takashi Egawa (NITech) ----- Break ( 15 min. ) ----- (9) 14:50 - 15:15 Current Transport Characteristics of Quasi-AlGaN/SiC Heterojunction Bipolar Transistors with Various Band Discontinuities Takafumi Okuda, Hiroki Miyake, Tsunenobu Kimoto, Jun Suda (Kyoto Univ.) (10) 15:15 - 15:40 Analysis of Recovery process in AlGaN/GaN HFET Current Collapse Taishi Hosokawa, Yusuke Ikawa, Yusuke Kio, Jin-Ping Ao, Yasuo Ohno (Tokushima Univ./STS) (11) 15:40 - 16:05 Fabrication of AlGaN/GaN E-mode HFETs with Enhanced Barrier Structures Narihiko Maeda, Masanobu Hiroki, Satoshi Sasaki, Yuichi Harada (NTT) (12) 16:05 - 16:30 High-accuracy equivalent-circuit-model for GaN-GIT bi-directional switch Toshihide Ide, Mitsuaki Shimizu, Xu-Qiang Shen (AIST), Tatsuo Morita, Tetsuzo Ueda, Tsuyoshi Tanaka (Panasonic) ----- Break ( 15 min. ) ----- (13) 16:45 - 17:10 Si Ion Implantated GaN-HEMT for Millimeter-Wave Applications Masato Nishimori, Kozo Makiyama, Toshihiro Ohki, Atsushi Yamada, Kenji Imanishi, Toshihide Kikkawa, Naoki Hara, Keiji Watanabe (Fujitsu Lab.) (14) 17:10 - 17:35 Ultraviolet Photodetectors using Transparent Gate AlGaN/GaN-HEMT Tomotaka Narita, Akio Wakejima, Takashi Egawa (NIT) (15) 17:35 - 18:00 Concentrating properties of nitride-based solar cells Mikiko Mori, Shota Yamamoto, Yosuke Kuwahara, Takahiro Fujii, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki (Meijo Univ.), Hiroshi Amano (Nagoya Univ.) ---------------------------------------- Fri, Nov 18 AM (09:30 - 15:55) ---------------------------------------- (16) 09:30 - 09:55 Strain-Induced Effects on the Electronic Band Structure of AlN Ryota Ishii, Akio Kaneta, Ryan G. Banal, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.) (17) 09:55 - 10:20 Microstructural observation of AlGaN on ELO-AlN Kimiyasu Ide, Junichi Yamamoto, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki (Meijo Univ.), Hiroshi Amano (Nagoya Univ.) (18) 10:20 - 10:45 2D-mapping measurement of residual strain in GaN substrates by micro-reflectance spectroscopy Atsushi Yamaguchi (Kanazawa Inst. Tech.), H. Y. Geng, Haruo Sunakawa, Y. Ishihara, Toshiharu Matsueda, Akira Usui (Furukawa) (19) 10:45 - 11:10 Effect of Mg co-doping on optical characteristics of GaN:Eu Hiroto Sekiguchi (Toyohashi Univ. Tech.), Yasufumi Takagi (Hamamatsu Photonics), Tatsuki Otani, Hiroshi Okada, Akihiro Wakahara (Toyohashi Univ. Tech.) (20) 11:10 - 11:35 Optical gain spectra in semipolar {20-21} oriented green InGaN LDs in comparison with (0001) LDs Yoon Seok Kim, Akio Kaneta, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.), Takashi Kyono, Masaki Ueno, Takao Nakamura (Sumitomo Electric) ----- Lunch Break ( 70 min. ) ----- (21) 12:45 - 13:10 Development of 260-nm AlGaN-based deep-ultraviolet light-emitting diodes using 2inchx3 MOVPE system Takuya Mino (RIKEN/PEW), Hideki Hirayama (RIKEN), Takayoshi Takano, Norimichi Noguchi, Kenji Tsubaki (RIKEN/PEW) (22) 13:10 - 13:35 Investigation for chracteristics of AlN growth depending on m- and a-axis oriented off-angle of c-sapphire substrate and fabrication of high-efficiency AlGaN Deep-UV LEDs Noritoshi Maeda, Hideki Hirayama, Sachie Fujikawa (RIKEN) (23) 13:35 - 14:00 Realization of 256 nm AlGaN-based deep-ultraviolet light-emitting diodes on Si substrates using epitaxial lateral overgrowth AlN templates Takuya Mino (RIKEN/PEW), Hideki Hirayama (RIKEN), Takayoshi Takano, Kenji Tsubaki (RIKEN/PEW), Masakazu Sugiyama (Tokyo Univ.) ----- Break ( 15 min. ) ----- (24) 14:15 - 14:40 Growth of (Si)(Ga)AlC(P) thin film on sapphire by metal organic chemical vapor deposition Yuya Ohnishi, Fumiya Horie, Shiro Sakai (Tokushimadai) (25) 14:40 - 15:05 Metalorganic Chemical Vapor Deposition Growth of GaN Nanowires and Their Application to Single Photon Sources Munetaka Arita, Kihyun Choi, Yasuhiko Arakawa (Univ. of Tokyo) (26) 15:05 - 15:30 Fabrication and characterization of near-infrared (1.46 um) GaN-based nanocolumn LEDs with In-rich InGaN active layer Jumpei Kamimura, Katsumi Kishino, Kouichi Kamiyama, Akihiko Kikuchi (Sophia Univ.) (27) 15:30 - 15:55 Fabrication of GaN based Terahertz-Quantum Cascade Laser Structure and Observation of Spontaneous Emission Wataru Terashima, Hideki Hirayama (RIKEN) ----- Closing Remarks ( 5 min. ) ----- # Information for speakers General Talk will have 20 minutes for presentation and 5 minutes for discussion. === Technical Committee on Electron Device (ED) === # FUTURE SCHEDULE: Wed, Dec 14, 2011 - Thu, Dec 15, 2011: Tohoku University [Thu, Oct 20], Topics: Milimeter wave, terahertz device and systems Wed, Jan 11, 2012 - Thu, Jan 12, 2012: Kikai-Shinko-Kaikan Bldg [Fri, Nov 18] Tue, Feb 7, 2012 - Wed, Feb 8, 2012: [Tue, Nov 15] # SECRETARY: Hara Naoki （Fujitsu Lab.） TEL : +81-46-250-8242、FAX : +81-46-250-8168 E-mail :     o       Kunio Tsuda（Toshiba） TEL : +81-44-549-2142、FAX : +81-44-520-1501 E-mail :   o   ba Michihiko Suhara (Tokyo Metropolitan Univ.) TEL : +81-42-677-2765 Fax : +81-42-677-2756 E-mail :      t  Tetsuzo Ueda（Panasonic) TEL：+81-75-956-8273、FAX：+81-75-956-9110 E-mail：   zopa c=== Technical Committee on Component Parts and Materials (CPM) === # FUTURE SCHEDULE: Mon, Nov 28, 2011 - Wed, Nov 30, 2011: NewWelCity Miyazaki [Thu, Sep 1], Topics: Design Gaia 2010 -New Field of VLSI Design- Fri, Feb 10, 2012: Kikai-Shinko-Kaikan Bldg [Mon, Dec 12], Topics: Battery technology, etc === Technical Committee on Lasers and Quantum Electronics (LQE) === # FUTURE SCHEDULE: Fri, Dec 16, 2011: Kikai-Shinko-Kaikan Bldg. [Fri, Oct 14] Thu, Jan 26, 2012 - Fri, Jan 27, 2012: Osaka Univ. Convention Center [Thu, Nov 10], Topics: Photonic integrated circuits and devices, swtiching, PLC, fiber devices, waveguide analysis, and others # SECRETARY: Tomoyuki Miyamoto (Tokyo Institute of Technology) TEL +81-45-924-5059, FAX +81-45-924-5977 E-mail: t   tpi  Kazunori Shinoda (Hitachi) TEL +81-42-323-1111，FAX +81-42-327-7786 E-mail:     nv # ANNOUNCEMENT: # Homepage of LQE is http://www.ieice.org/~lqe/jpn/ Last modified: 2011-10-17 09:15:45 |
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