Thu, Nov 17 AM
10:00 - 18:00 |
| |
10:00-10:05 |
Opening Remarks ( 5 min. ) |
| (1) |
10:05-10:30 |
AlN/GaN Short-Period Superlattice Coherently Grown on 6H-SiC (0001) Substrates by Molecular-Beam Epitaxy |
Ryosuke Kikuchi, Hironori Okumura, Tsunenobu Kimoto, Jun Suda (Kyoto Univ.) |
| (2) |
10:30-10:55 |
Control of interlayer on MOVPE growth of AlN on sapphire substrate |
Reina Miyagawa, Shibo Yang, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Takaaki Kuwahara, Noriyuki Kuwano, Masatoshi Mitsuhara (Kyushu Univ.) |
| (3) |
10:55-11:20 |
Etch-pit method of threading dislocations in epitaxial AlN films |
Takuya Nomura, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Yuuki Ryu, Takaaki Kuwahara, Noriyuki Kuwano (Kyusyu Univ.) |
| (4) |
11:20-11:45 |
Decreasing Dislocation Density of MOCVD-GaN Using Silicon Dioxide Masks |
Masaru Tanimoto, Shiro Sakai (Tokushima Univ.) |
| |
11:45-12:55 |
Lunch Break ( 70 min. ) |
| (5) |
12:55-13:20 |
Realization of Freestanding GaN Substrates with High Surface Quality and Low Dislocation Density by Crystal Hardness Control |
Hajime Fujikura, Yuichi Oshima, Takehiro Yoshida, Takeshi Megro, Toshiya Saito (Hitachi Cable) |
| (6) |
13:20-13:45 |
Interface characterization of MOS structures fabricated on dry-etched GaN and AlGaN |
Sungsik Kim, Yujin Hori, Zenji Yatabe, Tamotsu Hashizume (Hokkaido Univ.) |
| (7) |
13:45-14:10 |
Surface Barrier Height Lowering at Above 540 K in AlInN/AlN/GaN Heterostructures |
Md. Tanvir Hasan, Hirokuni Tokuda, Masaaki Kuzuhara (Univ. of Fukui) |
| (8) |
14:10-14:35 |
Characterization of insulators and interfaces in GaN-based MIS-diodes |
Yasuhiro Iwata, Toshiharu Kubo, Takashi Egawa (NITech) |
| |
14:35-14:50 |
Break ( 15 min. ) |
| (9) |
14:50-15:15 |
Current Transport Characteristics of Quasi-AlGaN/SiC Heterojunction Bipolar Transistors with Various Band Discontinuities |
Takafumi Okuda, Hiroki Miyake, Tsunenobu Kimoto, Jun Suda (Kyoto Univ.) |
| (10) |
15:15-15:40 |
Analysis of Recovery process in AlGaN/GaN HFET Current Collapse |
Taishi Hosokawa, Yusuke Ikawa, Yusuke Kio, Jin-Ping Ao, Yasuo Ohno (Tokushima Univ./STS) |
| (11) |
15:40-16:05 |
Fabrication of AlGaN/GaN E-mode HFETs with Enhanced Barrier Structures |
Narihiko Maeda, Masanobu Hiroki, Satoshi Sasaki, Yuichi Harada (NTT) |
| (12) |
16:05-16:30 |
High-accuracy equivalent-circuit-model for GaN-GIT bi-directional switch |
Toshihide Ide, Mitsuaki Shimizu, Xu-Qiang Shen (AIST), Tatsuo Morita, Tetsuzo Ueda, Tsuyoshi Tanaka (Panasonic) |
| |
16:30-16:45 |
Break ( 15 min. ) |
| (13) |
16:45-17:10 |
Si Ion Implantated GaN-HEMT for Millimeter-Wave Applications |
Masato Nishimori, Kozo Makiyama, Toshihiro Ohki, Atsushi Yamada, Kenji Imanishi, Toshihide Kikkawa, Naoki Hara, Keiji Watanabe (Fujitsu Lab.) |
| (14) |
17:10-17:35 |
Ultraviolet Photodetectors using Transparent Gate AlGaN/GaN-HEMT |
Tomotaka Narita, Akio Wakejima, Takashi Egawa (NIT) |
| (15) |
17:35-18:00 |
Concentrating properties of nitride-based solar cells |
Mikiko Mori, Shota Yamamoto, Yosuke Kuwahara, Takahiro Fujii, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki (Meijo Univ.), Hiroshi Amano (Nagoya Univ.) |
Fri, Nov 18 AM
09:30 - 15:55 |
| (16) |
09:30-09:55 |
Strain-Induced Effects on the Electronic Band Structure of AlN |
Ryota Ishii, Akio Kaneta, Ryan G. Banal, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.) |
| (17) |
09:55-10:20 |
Microstructural observation of AlGaN on ELO-AlN |
Kimiyasu Ide, Junichi Yamamoto, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki (Meijo Univ.), Hiroshi Amano (Nagoya Univ.) |
| (18) |
10:20-10:45 |
2D-mapping measurement of residual strain in GaN substrates by micro-reflectance spectroscopy |
Atsushi Yamaguchi (Kanazawa Inst. Tech.), H. Y. Geng, Haruo Sunakawa, Y. Ishihara, Toshiharu Matsueda, Akira Usui (Furukawa) |
| (19) |
10:45-11:10 |
Effect of Mg co-doping on optical characteristics of GaN:Eu |
Hiroto Sekiguchi (Toyohashi Univ. Tech.), Yasufumi Takagi (Hamamatsu Photonics), Tatsuki Otani, Hiroshi Okada, Akihiro Wakahara (Toyohashi Univ. Tech.) |
| (20) |
11:10-11:35 |
Optical gain spectra in semipolar {20-21} oriented green InGaN LDs in comparison with (0001) LDs |
Yoon Seok Kim, Akio Kaneta, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.), Takashi Kyono, Masaki Ueno, Takao Nakamura (Sumitomo Electric) |
| |
11:35-12:45 |
Lunch Break ( 70 min. ) |
| (21) |
12:45-13:10 |
Development of 260-nm AlGaN-based deep-ultraviolet light-emitting diodes using 2inchx3 MOVPE system |
Takuya Mino (RIKEN/PEW), Hideki Hirayama (RIKEN), Takayoshi Takano, Norimichi Noguchi, Kenji Tsubaki (RIKEN/PEW) |
| (22) |
13:10-13:35 |
Investigation for chracteristics of AlN growth depending on m- and a-axis oriented off-angle of c-sapphire substrate and fabrication of high-efficiency AlGaN Deep-UV LEDs |
Noritoshi Maeda, Hideki Hirayama, Sachie Fujikawa (RIKEN) |
| (23) |
13:35-14:00 |
Realization of 256 nm AlGaN-based deep-ultraviolet light-emitting diodes on Si substrates using epitaxial lateral overgrowth AlN templates |
Takuya Mino (RIKEN/PEW), Hideki Hirayama (RIKEN), Takayoshi Takano, Kenji Tsubaki (RIKEN/PEW), Masakazu Sugiyama (Tokyo Univ.) |
| |
14:00-14:15 |
Break ( 15 min. ) |
| (24) |
14:15-14:40 |
Growth of (Si)(Ga)AlC(P) thin film on sapphire by metal organic chemical vapor deposition |
Yuya Ohnishi, Fumiya Horie, Shiro Sakai (Tokushimadai) |
| (25) |
14:40-15:05 |
Metalorganic Chemical Vapor Deposition Growth of GaN Nanowires and Their Application to Single Photon Sources |
Munetaka Arita, Kihyun Choi, Yasuhiko Arakawa (Univ. of Tokyo) |
| (26) |
15:05-15:30 |
Fabrication and characterization of near-infrared (1.46 um) GaN-based nanocolumn LEDs with In-rich InGaN active layer |
Jumpei Kamimura, Katsumi Kishino, Kouichi Kamiyama, Akihiko Kikuchi (Sophia Univ.) |
| (27) |
15:30-15:55 |
Fabrication of GaN based Terahertz-Quantum Cascade Laser Structure and Observation of Spontaneous Emission |
Wataru Terashima, Hideki Hirayama (RIKEN) |
| |
15:55-16:00 |
Closing Remarks ( 5 min. ) |
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