Tue, Jun 22 PM 13:00 - 17:50 |
|
13:00-13:10 |
8th SDM Young Excellence Award Ceremony ( 10 min. ) |
(1) |
13:10-13:50 |
[Memorial Lecture]
Modification of states of metal copper and copper oxide due to isopropyl alcohol treatment |
Takezo Mawaki (Tohoku Univ.), Akinobu Teramoto (Hiroshima Univ.), Katsutoshi Ishii (Tokyo Electron Technology Solutions), Yoshinobu Shiba, Tomoyuki Suwa (Tohoku Univ.), Shuji Azumo, Akira Shimizu, Kota Umezawa (Tokyo Electron Technology Solutions), Rihito Kuroda, Yasuyuki Shirai, Shigetoshi Sugawa (Tohoku Univ.) |
(2) |
13:50-14:30 |
[Memorial Lecture]
Operation mechanism of Si/HZO ferroelectric FETs
-- Role of MOS (MFS) interface -- |
Kasidit Toprasertpong, Tsung-En Lee, Zaoyang Lin, Kento Tahara, Kouhei Watanabe, Mitsuru Takenaka, Shinichi Takagi (Univ. Tokyo) |
|
14:30-14:40 |
Break ( 10 min. ) |
(3) |
14:40-15:20 |
[Invited Lecture]
FET characteristics with 2D channel |
Hitoshi Wakabayashi (Tokyo Tech) |
(4) |
15:20-16:00 |
[Invited Lecture]
Development of TFET-based qubits enabling high-temperature operation to realize silicon-based quantum computing |
Takahiro Mori (AIST) |
(5) |
16:00-16:40 |
[Invited Lecture]
For understanding ferroelectric HfO2 toward its device applications |
Akira Toriumi |
|
16:40-16:50 |
Break ( 10 min. ) |
(6) |
16:50-17:10 |
Application-induced TaOx ReRAM Cell Reliability Variation Tolerated High-speed Storage |
Chihiro Matsui, Ken Takeuchi (Univ. Tokyo) |
(7) |
17:10-17:30 |
Influence of quantized bit precision and bit-error rate in Computation-in-Memory with ReRAM on optimal answers of combinatorial optimization problems |
Naoko Misawa, Kenta Taoka, Shunsuke Koshino, Chihiro Matsui, Ken Takeuchi (Univ. Tokyo) |
(8) |
17:30-17:50 |
Formation and Thickness Control of Ultrathin Ge Layer on Al and Ag/(111) Structures by Thermal Anneal |
Akio Ohta, Keigo Matsushita, Noriyuki Taoka, Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ.) |