ken-system: Advance Program

IEICE Technical Committee Submission System
Advance Program

Online Proceedings
[Sign in]
Tech. Rep. Archives

===============================================
Technical Committee on Silicon Device and Materials (SDM)
Chair: Shigeyoshi Watanabe (Shonan Inst. of Tech.) Vice Chair: Toshihiro Sugii (Fujitsu Microelectronics)
Secretary: Shigeru Kawanaka (Toshiba), Hisahiro Anzai (Sony)
Assistant: Syunichiro Ohmi (Tokyo Inst. of Tech.)

===============================================
Technical Committee on Electron Device (ED)
Chair: Masaaki Kuzuhara (Univ. of Fukui) Vice Chair: Tamotsu Hashidume (Hokkaido Univ.)
Secretary: Koichi Murata (NTT)
Assistant: Naoki Hara (Fujitsu Labs.), Kunio Tsuda (Toshiba)

DATE:
Thu, Feb 26, 2009 13:30 - 17:20
Fri, Feb 27, 2009 09:00 - 12:10

PLACE:
Hyakunen-Kinenkaikan, Hokkaido University(Nishi 6, Kita 9, Kita-ku, Sapporo, 060-0809 Japan.10 minutes walk from JR Sapporo Station. http://www.hokudai.ac.jp/en/pickup/accesstocampus.html. Prof. Seiya Kasai. +81-11-706-6509 or -7171)

TOPICS:
Functional nanodevices and related technologies

----------------------------------------
Thu, Feb 26 PM (13:30 - 17:20)
----------------------------------------

(1) 13:30 - 14:10
[Invited Talk]
Epitaxial Graphene Grown on Si Substrate and Its Applications to Electron Devices
Taiichi Otsuji, Tetsuya Suemitsu, Hyon-Choru Kang, Hiromi Karasawa, Yuu Miyamoto, Hiroyuki Handa, Maki Suemitsu (Tohoku Univ.), Eiichi Sano (Hokkaido Univ.), Maxim Ryzhii, Victor Ryzhii (Univ. of Aizu)

(2) 14:10 - 14:35
Magnetic properties of Mn-implanyed SOI layers
Ｙａｓｕａｋｉ Miyazaki (NTT/Keio Univ.), Yukinori Ono, Hiroyuki Kageshima, Masao Nagase, Akira Fujiwara (NTT), Eiji Ohta (Keio Univ.)

(3) 14:35 - 15:00
Fabrication and application for Spin injection with Magnetite/InAs heterostructure
Takeshi Ejiri, J. Bubesh Babu, Kanji Yoh (Hokkaido Univ.)

(4) 15:00 - 15:25
Structural transition of InP nanowires grown by selective-area metalorganic vapor phase epitaxy
Yusuke Kitauchi, Junichi Motohisa, Yasunori Kobayashi, Takashi Fukui (Hokkaido Univ.)

----- Break ( 15 min. ) -----

(5) 15:40 - 16:05
Feild Emitter Arrays with focusing function and it's applications
Yoichiro Neo, Masafumi Takeda, Tomoya Tagami, Syun Horie, Toru Aoki, Hidenori Mimura (Shizuoka Univ.), Tomoya Yoshida, Masayoshi Nagao, Seigo Kanemaru (National Inst.of Adv Ind Scie and Tech.)

(6) 16:05 - 16:30
Characteristics of Single Electron Transistor and Turnstile with Input Discretizer
Masashi Takiguchi, Shota Hayami, Masaki Otsuka, Akio Kawai, Masataka Moriya, Tadayuki Kobayashi, Hiroshi Shimada, Yoshinao Mizugaki (The Univ of Electro-Communication)

(7) 16:30 - 16:55
Ultrahigh-Speed Comparator with Resonant-Tunneling Diodes
Tomohiko Ebata, Uichiro Ohmae, Kazuya Machida, Takao Waho (Sophia Univ.)

(8) 16:55 - 17:20
RTD-Pair Oscillators Integrated on an AlN Ceramic Substrate
Koichi Maezawa (Univ. Toyama), Naoki Kamegai, Shigeru Kishimoto, Takashi Mizutani (Nagoya Univ.), Kazuhiro Akamatsu (Nippon Mining & Metals Co., Ltd.,)

----------------------------------------
Fri, Feb 27 AM (09:00 - 12:10)
----------------------------------------

(9) 09:00 - 09:25
Fabrication of single-Electron Transistors Using Field-Emission-Induced Electromigration
Yusuke Tomoda, Watari Kume, Michinobu Hanada, Keisuke Takahashi, Jun-ichi Shirakashi (Tokyo Univ. of Agr. & Tech.)

(10) 09:25 - 09:50
Dual-dot single-electron transistor fabricated in silicon nanowire
Mingyu Jo, Takuya Kaizawa, Masashi Arita (Hokkaido Univ.), Akira Fujiwara (NTT), Yasuo Takahashi (Hokkaido Univ.)

(11) 09:50 - 10:15
Silicon Nanowire pMOSFETs and Single-Hole Transistors at Room Temperature under Uniaxial Strain
YeonJoo Jeong, Chen Jiezhi, Takuya Saraya, Toshiro Hiramoto (Univ. of Tokyo)

(12) 10:15 - 10:40
Characterization and Analysis on Operation of GaAs Three-Branch Nanowire Junction Devices
Daisuke Nakata, Shaharin Fadzli Abd Rahman, Yuta Shiratori (Hokkaido Univ.), Seiya Kasai (Hokkaido Univ/PRESTO,JST)

----- Break ( 15 min. ) -----

(13) 10:55 - 11:20
The fourth passive circuit element relating magnetic flux to charge
Yoshihito Amemiya, Yasuo Takahashi (Hokkaido Univ.)

(14) 11:20 - 11:45
Observation of Stochastic Resonance in Nanodevice-integrated Systems Utilizing GaAs-based Nanowire Network and Its Analysis
Seiya Kasai (Hokkaido Univ/JST), Tetsuya Asai, Yuta Shiratori, Hong-Quan Zhao (Hokkaido Univ.)

(15) 11:45 - 12:10
Thermoelectric characteristics of Si nanostructures for a high-efficiency thermoelectric device
Hiroya Ikeda, Faiz Salleh, Kiyosumi Asai, Akihiro Ishida (Shizuoka Univ.)

=== Technical Committee on Silicon Device and Materials (SDM) ===
# FUTURE SCHEDULE:

Fri, Apr 24, 2009: AIST Kyushu-center [Sat, Feb 21], Topics: TFT Materials, Devices, Applications, Analysis and Others related to SDM and OME activity
Thu, May 14, 2009 - Fri, May 15, 2009: Satellite Office, Toyohashi Univ. of Technology [Thu, Mar 19], Topics: Crystal growth, evaluation and device (Compound, Si, SiGe, Electronic and light emitting materials）

# SECRETARY:
Shigeru KAWANAKA (Toshiba)
TEL 045-776-5670, FAX 045-776-4104
E-mail

=== Technical Committee on Electron Device (ED) ===
# FUTURE SCHEDULE:

Thu, Apr 23, 2009 - Fri, Apr 24, 2009: Tohoku Univ. [Sun, Feb 22], Topics: TFT, etc
Thu, May 14, 2009 - Fri, May 15, 2009: Satellite Office, Toyohashi Univ. of Technology [Thu, Mar 19], Topics: Crystal growth, evaluation and device (Compound, Si, SiGe, Electronic and light emitting materials）

# SECRETARY:
Koichi Murata（NTT)
TEL：046-240-2871、FAX：046-270-2872
E-mail：