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Technical Committee on Electron Device (ED)
Chair: Naoki Hara (Fujitsu Labs.) Vice Chair: Koichi Maezawa (Univ. of Toyama)
Secretary: Seiya Kasai (Hokkaido Univ.), Koji Matsunaga (NEC)
Assistant: Toshikazu Suzuki (JAIST), Manabu Arai (New JRC)

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Technical Committee on Component Parts and Materials (CPM)
Chair: Yasushi Takano (Shizuoka Univ.) Vice Chair: Satoru Noge (Numazu National College of Tech.)
Secretary: Tomomasa Sato (Kanagawa Univ.), Junichi Kodate (NTT)
Assistant: Nobuyuki Iwata (Nihon Univ.), Takashi Sakamoto (NTT)

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Technical Committee on Lasers and Quantum Electronics (LQE)
Chair: Masahiko Kondo (Osaka Univ.) Vice Chair: Hajime Shoji (Sumitomo Electric Industries)
Secretary: Hiroshi Aruga (Mitsubishi Electric), Toshimasa Umezawa (NICT)

DATE:
Thu, Nov 27, 2014 10:30 - 17:15
Fri, Nov 28, 2014 09:30 - 16:55

PLACE:
(http://www.osaka-u.ac.jp/ja/access/accessmap.html. Prof. Masahiko KONDOW. +81-6-6879-7765)

TOPICS:


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Thu, Nov 27 AM (10:30 - 10:35)
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----- Opening Address ( 5 min. ) -----

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Thu, Nov 27 PM (10:35 - 12:15)
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(1) 10:35 - 11:00
AlN Single Crystal Growth by means of Sublimation method
Yosuke Iwasaki, Shunro Nagata, Hidetoshi Akiyama, Keiichiro Nakamura (JFE MINERAL)

(2) 11:00 - 11:25
Crystal growth of GaN-based nitride semiconductors on lattice-matched ScAlMgO4
Takuya Ozaki, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.)

(3) 11:25 - 11:50
Critical thickness for phase separation in MOVPE-grown thick InGaN
Kazuki Kodama, Tanvir Md Hasan, Hiroyuki Nomura (Univ. of Fukui), Naoteru Shigekawa (Osaka City Univ.), Akio Yamamoto, Masaaki Kuzuhara (Univ. of Fukui)

(4) 11:50 - 12:15
Effects of relaxation layer of AlGaN multiple quantum wells by LP-MOVPE
Kazuhiro Nakahama (Mie Univ.), Fumitsugu Fukuyo (HAMA PHOTO), Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Harumasa Yoshida, Yuji Kobayashi (HAMA PHOTO)

----- Lunch Break ( 60 min. ) -----

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Thu, Nov 27 PM (13:15 - 15:20)
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(5) 13:15 - 13:40
Emission characteristics of InGaN-MQW structures on m-plane GaN substrates
Kaori Kurihara, Satoru Nagao (Mitsubishi Chemical), Atsushi Yamaguchi (Kanazawa Inst. of Tech.)

(6) 13:40 - 14:05
Optical Polarization Properties in non-c-oriented-InGaN Quantum Wells
Shigeta Sakai, Atsushi Yamaguchi (Kanazawa Inst. of Tech.), Kaori Kurihara, Satoru Nagao (Mitsubishi Chemical)

(7) 14:05 - 14:30
The micro machining process technology of nano imprint and dry etching to improve the efficiency of nitride LED
Yukio Kashima, Eriko Matsuura (Marubun), Satoshi Shimatani (TOK), Mitsunori Kokubo, Takaharu Tashiro, Takafumi Ookawa (Toshiba Machine), Ryuichiro Kamimura, Yamato Osada (ULVAC), Sachie Fujikawa, Hideki Hirayama (RIKEN)

(8) 14:30 - 14:55
Two-Dimensional Strain Mapping of GaN Templates Fabricated by Nano-Channel FIELO Method Using Nanoimprint Lithography
Masanori Nambu, Atsushi Yamaguchi (Kanazawa Inst. of Tech.), Hiroki Goto, Haruo Sunakawa, Toshiharu Matsueda (Furukawa Co. Ltd.), Akiko Okada (Waseda Univ.), Hidetoshi Shinohara, Hiroshi Goto (Toshiba Machine Co. Ltd.), Jun Mizuno (Waseda Univ.), Akira Usui (Furukawa Co. Ltd.)

(9) 14:55 - 15:20
Fabrication of high-quality AlN buffer layer for deep-UV LEDs grown on wet chemical etched patterned sapphire substrate
Yuya Kanazawa, Shiro Toyoda, Issei Ohshima (Saitama Univ./RIKEN), Norihiko Kamata (Saitama Univ.), Yukio Kashima (Marubun), Eriko Matsuura (MARUBUN), Satoshi Shimatani (TOK), Mitsunori Kokubo, Takaharu Tashiro (TOSHIBA MACHINE), Takashi Ohkawa, Ryuichiro Kamimura, Yamato Osada (ULVAC), Hideki Hirayama (RIKEN)

----- Break ( 15 min. ) -----

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Thu, Nov 27 PM (15:35 - 17:15)
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(10) 15:35 - 16:00
Hardness and Young's modulus of InN
Yasushi Ohkubo, Momoto Deura (Tohoku Univ.), Yuki Tokumoto (Univ. Tokyo), Kentaro Kutsukake, Yutaka Ohno, Ichiro Yonenaga (Tohoku Univ.)

(11) 16:00 - 16:25
Crystal Growth and Magnetic Property of Cr2O3 Thin Films on LiNbO3 Substrates
Takumi Nakamura, Yutaro Hayashi, Takashi Sumida, Kosuke Hashimoto, Tomoko Nagata, Hiroshi Yamamoto, Nobuyuki Iwata (Nihon Univ.)

(12) 16:25 - 16:50
Relationship between First-Principles Studies and Experimental Results of [(CaFeO3)m/(LaFeO3)n] Superlattices about an Electric and Magnetic Structures and Properties.
Takahiro Oikawa, Yuta Watabe, Takaaki Inaba, Keisuke Oshima, Huaping Song, Tomoko Nagata, Hiroshi Yamamoto, Nobuyuki Iwata (Nihon Univ.)

(13) 16:50 - 17:15
Chiral Structure and Electric Property of Single-Walled Carbon Nanotubes Grown with Free Electron Laser Irradiation
Yusaku Tsuda, Keisuke Yoshida, Daiki Kawaguchi, Tomoko Nagata, Nobuyuki Iwata, Hiroshi Yamamoto (Nihon Univ.)

----------------------------------------
Fri, Nov 28 AM (09:30 - 10:45)
----------------------------------------

(14) 09:30 - 09:55
Realization of Lasing Action of GaN/AlGaN based Terahertz Quantum Cascade Laser using Two Quantum Well Structure
Wataru Terashima, Hideki Hirayama (RIKEN)

(15) 09:55 - 10:20
MOCVD Growth of GaN-based THz Quantum Cascade Laser and Observation of Emission at 7 THz
Shiro Toyoda (RIKEN/Saitama Univ.), Wataru Terashima (RIKEN), Norihiko Kamata (Saitama Univ.), Hideki Hirayama (RIKEN/Saitama Univ.)

(16) 10:20 - 10:45
A hybrid integrated light source on Si platform using a quantum dot laser for high temperature operation
Nobuaki Hatori, Takanori Shimizu (PETRA), Makoto Okano (National Institute of Advanced Industrial Science AIST), Masashige Ishizaka, Tsuyoshi Yamamoto, Yutaka Urino (PETRA), Masahiko Mori (National Institute of Advanced Industrial Science AIST), Takahiro Nakamura (PETRA), Yasuhiko Arakawa (Univ. of Tokyo)

----- Break ( 15 min. ) -----

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Fri, Nov 28 PM (11:00 - 12:15)
----------------------------------------

(17) 11:00 - 11:25
Linearly polarized nitride-based light emitting diode with multilayer subwavelength grating
Yuusuke Takashima, Ryo Shimizu, Masanobu Haraguchi, Yoshiki Naoi (Univ. of Tokushima)

(18) 11:25 - 11:50
Operation of deep UV LED using superlattice p-AlGaN hole-spreading contact layer
Noritoshi Maeda, Masafumi Jo, Hideki Hirayama (RIKEN)

(19) 11:50 - 12:15
Deep UV light-emitting diodes containing a p-AlGaN contacting layer with high Al content
Masafumi Jo, Noritoshi Maeda, Hideki Hirayama (RIKEN)

----- Lunch Break ( 60 min. ) -----

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Fri, Nov 28 PM (13:15 - 14:55)
----------------------------------------

(20) 13:15 - 13:40
Suppression in Current Collapse of Millimeter-Wave GaN-HEMT Using MSQ-Based Low-k Insulator Films
Shiro Ozaki, Kozo Makiyama, Toshihiro Ohki, Yoichi Kamada, Masaru Sato, Yoshitaka Niida, Naoya Okamoto, Satoshi Masuda, Kazukiyo Joshin (Fujitsu)

(21) 13:40 - 14:05
Mapping of thermal degradation of Au/Ni/n-GaN Schottky diodes using scanning internal photoemission microscopy
Kenji Shiojima, Shingo Yamamoto, Yuhei Kihara (Univ. of Fukui)

(22) 14:05 - 14:30
Surface charging effects in AlGaN/GaN HEMTs induced by off-stress bias
Kenya Nishiguchi, Tamotsu Hashizume (Hokkaido Univ.)

(23) 14:30 - 14:55
MOCVD Gorwoth and characterization of nearly lattice-matched InAlN/AlGaN 2DEG heterostructures
Shu Fujita, Makoto Miyoshi, Takashi Egawa (Nagoya Inst. Tech.)

----- Break ( 15 min. ) -----

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Fri, Nov 28 PM (15:10 - 16:55)
----------------------------------------

(24) 15:10 - 15:35
Investigation on the maximization of short-circuit current in InGaN/GaN MQW solar cells
Noriyuki Watanabe, Manabu Mitsuhara, Haruki Yokoyama (NTT), Jianbo Liang, Naoteru Shigekawa (Osaka City Univ.)

(25) 15:35 - 16:00
Enhancement of photoluminescence intensity in Eu-doped GaN by microcavity
Tomohiro Inaba, Ryuta Wakamatsu, Dong-gun Lee, Takanori Kojima, Atsushi Koizumi, Yasufumi Fujiwara (Osaka Univ.)

(26) 16:00 - 16:25
Effects of thermal cleaning on surface of bulk GaN substrates
Shunsuke Okada, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Reina Miyagawa, Osamu Eryu (Nagoya Inst. Tech.), Tamotsu Hashizume (Hokkaido Univ.)

(27) 16:25 - 16:50
Fabrication of single crystalline p-i-n nanocolumns array on a sputter-deposited thin film
Tomohiro Noma, Hiroaki Hayashi, Daishi Fukushima, Yuta Konno, Ichiro Nomura, Katsumi Kishino (Sophia Univ.)

----- Closing Address ( 5 min. ) -----

# Information for speakers
General Talk will have 20 minutes for presentation and 5 minutes for discussion.


=== Technical Committee on Electron Device (ED) ===
# FUTURE SCHEDULE:

Mon, Dec 22, 2014 - Tue, Dec 23, 2014: [Sun, Oct 19]
Thu, Jan 15, 2015 - Fri, Jan 16, 2015: Kikai-Shinko-Kaikan Bldg. [Thu, Nov 13], Topics: Compound Semiconductor IC and High-Speed, High-Frequency Devices/Microwave Technologies
Thu, Feb 5, 2015 - Fri, Feb 6, 2015: Hokkaido Univ. [Fri, Dec 5], Topics: Functional nanodevices and related technologies

# SECRETARY:
Tetsuzo Ueda(Panasonic)
TEL:+81-6-6906-4940、FAX:+81-6-6906-2426
E-mail: ueda.tetsuzo@jp.panasonic.com
Seiya Kasai (Hokkaido Univ.)
TEL : 011-706-6509 Fax : 011-716-6004
E-mail : kasai@rciqe.hokudai.ac.jp

=== Technical Committee on Component Parts and Materials (CPM) ===
# FUTURE SCHEDULE:

Fri, Feb 27, 2015: NTT Musashino R&D Center [Mon, Dec 8]

=== Technical Committee on Lasers and Quantum Electronics (LQE) ===
# FUTURE SCHEDULE:

Thu, Dec 18, 2014 - Fri, Dec 19, 2014: Kikai-Shinko-Kaikan, NTT Atsugi R&D center [Tue, Oct 14], Topics: Optical passive component (filter, connector, MEMS), Semiconductor lasers, Silicon photonics, etc
Thu, Jan 29, 2015 - Fri, Jan 30, 2015: [Mon, Nov 10]

# SECRETARY:
Hiroshi Aruga (Mitsubishi Electric)
TEL +81-467-41-2906,FAX +81-467-41-2519
E-mail: Aruga.Hiroshi@ab.MitsubishiElectric.co.jp

Toshikuni Umezawa (NICT)
TEL +81-42-327-7528, FAX +81-42-327-7938
E-mail: toshi_umezawa@nict.go.jp

# ANNOUNCEMENT:
# Homepage of LQE is http://www.ieice.org/~lqe/jpn/


Last modified: 2014-11-24 22:11:32


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