===============================================
Technical Committee on Electron Device (ED)
Chair: Koichi Maezawa (Univ. of Toyama) Vice Chair: Kunio Tsuda (Toshiba)
Secretary: Koji Matsunaga (NEC), Toshikazu Suzuki (JAIST)
Assistant: Manabu Arai (New JRC), Masataka Higashiwaki (NICT)
DATE:
Fri, Jul 24, 2015 13:15 - 16:25
Sat, Jul 25, 2015 10:15 - 11:55
PLACE:
IT Business Plaza Musashi 5F(https://www.bp-musashi.jp/)
TOPICS:
Semiconductor Processes and Devices
----------------------------------------
Fri, Jul 24 PM (13:15 - 14:55)
----------------------------------------
(1) 13:15 - 13:40
Electrical characteristics of N-polar p-type GaN Schottky contacts
Toshichika Aoki (Univ. of Fukui), Tomoyuki Tanikawa, Ryuji Katayama, Takashi Matsuoka (Tohoku Univ.), Kenji Shiojima (Univ. of Fukui)
(2) 13:40 - 14:05
Characterization of Schottky diodes on cleaved m-plane surface of free-standing n-GaN substrates
Moe Naganawa, Toshichika Aoki (Univ. of Fukui), Tomoyoshi Mishima (Hosei Univ.), Kenji Shiojima (Univ. of Fukui)
(3) 14:05 - 14:30
Low Damage Dry Etching for Recessed Gate AlGaN/GaN-HEMTs
Yuichi Minoura, Naoya Okamoto, Toshihiro Ohki, Shiro Ozaki, Kozo Makiyama, Yoichi Kamada, Keiji Watanabe (Fujitsu Labs.)
(4) 14:30 - 14:55
Low-frequency noise in AlN/AlGaN/GaN metal-insulator-semiconductor devices
Toshi-kazu Suzuki, Son Phuong Le, Tuan Quy Nguyen, Hong-An Shih (JAIST)
----- Break ( 15 min. ) -----
----------------------------------------
Fri, Jul 24 PM (15:10 - 16:25)
----------------------------------------
(5) 15:10 - 15:35
Band alignment at SiO2/β-Ga2O3 interface determined by X-ray photoelectron spectroscopy
Keita Konishi, Takafumi Kamimura, Man Hoi Wong (NICT), Kohei Sasaki, Akito Kuramata, Shigenobu Yamakoshi (MURA Corp.), Masataka Higashiwaki (NICT)
(6) 15:35 - 16:00
Electrical properties of SiC MOSFETs with various substrate impurity concentrations
Hiroshi Yano (NAIST/Univ. Tsukuba), Hiroto Yuki, Takashi Fuyuki (NAIST)
(7) 16:00 - 16:25
Fabrication of MFS-type diamond FET structure using organic ferroelectrics
Ryota Karaya, Hiroyuki Furuichi (Kanazawa Univ.), Takashi Nakajima (Tokyo Univ. of Sci.), Norio Tokuda, Takeshi Kawae (Kanazawa Univ.)
----------------------------------------
Sat, Jul 25 AM (10:15 - 11:55)
----------------------------------------
(8) 10:15 - 10:40
In-plane electrical properties of MnAs/InAs/GaAs(111)B heterostructures
Md Earul Islam, Cong Thanh Nguyen, Masashi Akabori (JAIST)
(9) 10:40 - 11:05
Fabrication of InGaAs channel multi-gate MOSFET’s with MOVPE regrown source/drain
Haruki Kinoshita, Seiko Netsu, Yuichi Mishima, Toru Kanazawa, Yasuyuki Miyamoto (Tokyo Tech)
(10) 11:05 - 11:30
Electron transport characteristics of strain reduced InSb QW structure with AlInSb stepped buffer layer
Tatsuya Taketsuru, Sachie Fujikawa, Yoshiaki Harada, Hiroki Suzuki, Kyousuke Isono, Sanshiro Kato, Daisuke Tuji, Hiroki I. Fujishiro (TUS)
(11) 11:30 - 11:55
Delta-Sigma Strain Sensor Using a Resonant Tunneling Diode
Koichi Maezawa, Yuichiro Kakutani, Taishu Nakayama, Takumi Tajika, Masayuki Mori (Univ. Toyama)
# Information for speakers
General Talk will have 20 minutes for presentation and 5 minutes for discussion.
=== Technical Committee on Electron Device (ED) ===
# FUTURE SCHEDULE:
Mon, Aug 3, 2015 - Tue, Aug 4, 2015: Kikai-Shinko-Kaikan Bldg. , Topics: Sensor device, MEMS, etc
Thu, Oct 22, 2015 - Fri, Oct 23, 2015: [Thu, Aug 20]
Last modified: 2015-06-05 19:42:09
|
Notification: Mail addresses are partially hidden against SPAM.
|