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Chair |
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Koichi Maezawa (Univ. of Toyama) |
Vice Chair |
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Kunio Tsuda (Toshiba) |
Secretary |
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Koji Matsunaga (NEC), Toshikazu Suzuki (JAIST) |
Assistant |
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Manabu Arai (New JRC), Masataka Higashiwaki (NICT) |
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Conference Date |
Sat, Jul 23, 2016 14:00 - 16:20
Sun, Jul 24, 2016 09:30 - 11:50 |
Topics |
Semiconductor Processes and Devices |
Conference Place |
Tokyo Metropolitan Univ. Minami-Osawa Campus, International House |
Address |
1-1 Minami-Osawa, Hachioji-shi, Tokyo, Japan 192-0397 |
Transportation Guide |
http://www.tmu.ac.jp/english/university/campusmap.html |
Contact Person |
Prof. Michihiko Suhara |
Sat, Jul 23 PM 14:00 - 14:50 |
(1) |
14:00-14:25 |
Surface-oxide-controlled InAlN/GaN MOS-HEMT Using Water Vapor |
Shiro Ozaki, Kozo Makiyama, Toshihiro Ohki, Yoichi Kamada, Masaru Sato, Yoshitaka Niida, Naoya Okamoto, Kazukiyo Joshin (Fujitsu Lab.) |
(2) |
14:25-14:50 |
Lorentzian low-frequency noise in AlTiO/AlGaN/GaN metal-insulator-semiconductor devices |
Toshi-kazu Suzuki, Son Phuong Le, Toshimasa Ui, Tuan Quy Nguyen, Hong-An Shih (JAIST) |
|
14:50-15:05 |
Break ( 15 min. ) |
Sat, Jul 23 PM 15:05 - 16:20 |
(3) |
15:05-15:30 |
Effects of post-deposition anneal on SiO2 layer on Ga2O3 |
Keita Konishi, Takafumi Kamimura, Man Hoi Wong (NICT), Kohei Sasaki, Akito Kuramata, Shigenobu Yamakoshi (Tamura Corp.), Masataka Higashiwaki (NICT) |
(4) |
15:30-15:55 |
p-Cu2O/AlOx/n-SiC/n-Si Structured Nonvolatile pn Memory Diode with Low-Switching Voltage |
Misa Tsuchiya, Takahiro Tsukamoto, Yoshiyuki Suda (Tokyo Univ. of Agric. and Tech.) |
(5) |
15:55-16:20 |
Heteroepitaxial Growth of InSb thin films on a Ge(111) substrate |
Takaaki Mitsueda, Masayuki Mori, Koichi Maezawa (Univ. Toyama) |
Sun, Jul 24 AM 09:30 - 11:50 |
(6) |
09:30-09:55 |
Resonant interactions in nonlinear metamaterial transmission lines |
Koichi Narahara (KAIT) |
(7) |
09:55-10:20 |
Hole-Tunneling Si1-xGex/Si DQW RTD with High Resonant Current |
Ayaka Shinkawa, Minoru Wakiya, Yuki Maeda, Takahiro Tsukamoto, Yoshiyuki Suda (Tokyo Univ. of Agric. and Tech.) |
(8) |
10:20-10:45 |
Room temperature negative differential resistance of CaF2/Si/CaF2 resonant tunneling diode |
Naoyuki Tanabe, Satoshi Shimanaka, Keita Suda, Masahiro Watanabe (Tokyo Tech) |
|
10:45-11:00 |
Break ( 15 min. ) |
(9) |
11:00-11:25 |
Resonant-Tunneling-Diode Terahertz Oscillator Integrated with Radial Line Slot Antennas for Circularly Polarized Wave Radiation |
Daisuke Horikawa, Safumi Suzuki, Masahiro Asada (Tokyo Tech) |
(10) |
11:25-11:50 |
Analysis of terahertz detection characteristics of a rectenna integrated with a semiconductor mesa |
Takemi Tokuoka, Michihiko Suhara (TMU) |
Announcement for Speakers |
General Talk | Each speech will have 20 minutes for presentation and 5 minutes for discussion. |
Contact Address and Latest Schedule Information |
ED |
Technical Committee on Electron Device (ED) [Latest Schedule]
|
Contact Address |
Koji Matsunaga(NEC)
TEL:+81-44-435-8348 FAX:+81-44-455-8253
E-: k-fpc
Toshikazu Suzuki (JAIST)
TEL : +81-761-51-1441 Fax : +81-761-51-1455
E- : sijaist |
Last modified: 2016-07-06 11:16:01
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