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=============================================== Technical Committee on Electron Device (ED) Chair: Masaaki Kuzuhara (Univ. of Fukui) Vice Chair: Tamotsu Hashidume (Hokkaido Univ.) Secretary: Koichi Murata (NTT) Assistant: Naoki Hara (Fujitsu Labs.), Kunio Tsuda (Toshiba) =============================================== Technical Committee on Lasers and Quantum Electronics (LQE) Chair: Yoshiaki Nakano (Univ. of Tokyo) Vice Chair: Hiroshi Ishikawa (AIST) Secretary: Takayuki Yamanaka (NTT), Ken Morito (Fujitsu Labs.) =============================================== Technical Committee on Component Parts and Materials (CPM) Chair: Kiichi Kamimura (Shinshu Univ.) Vice Chair: Kanji Yasui (Nagaoka Univ. of Tech.) Secretary: Hidehiko Shimizu (Niigata Univ.), Naoki Oba (NTT) Assistant: Yasushi Takemura (Yokohama National Univ.), Tadayuki Imai (NTT) DATE: Thu, Nov 27, 2008 09:30 - 18:05 Fri, Nov 28, 2008 09:00 - 16:35 PLACE: (052-735-5544) TOPICS: Nitride Based Optical and Electronic Devices, Materials and Related Technologies ---------------------------------------- Thu, Nov 27 AM (09:25 - 18:05) ---------------------------------------- ----- Opening Address ( 5 min. ) ----- (1) 09:30 - 09:55 Fabrication of regularly arranged InGaN/GaN nanocolumns by Ti mask selective area growth throughout rf-plasma-assisted molecular-beam epitaxy Hiroto Sekiguchi, Akihiko Kikuchi, Katsumi Kishino (Sophia Univ.) (2) 09:55 - 10:20 Random lasing in GaN nanocolumns Masaru Sakai, Katsumi Kishino, Akihiko Kikuchi, Hiroto Sekiguchi, Yuta Inose, Kazuhiro Ema, Tomi Ohtsuki (Sophia Univ.) (3) 10:20 - 10:45 A Proposal of InGaN-Based Multiple-Colored Light Emitting Devices Using Selective Area Metal-Organic Vapor Phase Epitaxy Tomonari Shioda, Yuki Tomita, Masakazu Sugiyama, Yukihiro Shimogaki, Yoshiaki Nakano (The Univ. of Tokyo) ----- Break ( 10 min. ) ----- (4) 10:55 - 11:20 Growth and characterization of nonpolar and semipolar (Al,In,Ga)N films on ZnO substrates Atsushi Kobayashi, Kohei Ueno, Kazuma Shimomoto, Jitsuo Ohta, Hiroshi Fujioka, Masaharu Oshima (Univ. of Tokyo), Hidetaka Amanai, Satoru Nagao, Hideyoshi Horie (Mitsubishi Chemical Group Science and Technology Research Center) (5) 11:20 - 11:45 Improvement of AlN-template quality for deep-UV and UV light emitters Tomohito Takeda, Hideaki Anzai, Hideo Kawanishi (Kogakuin) (6) 11:45 - 12:10 Growth and Characterization of M-plane InN on LiAlO2 Substrate by RF-MBE Yusuke Takagi, Hirokazu Nozawa, Tomohiro Yamaguchi, Tsutomu Araki, Yasushi Nanishi (Ritsumeikan Univ.) ----- Lunch Break ( 60 min. ) ----- (7) 13:10 - 13:35 Electroluminescence study of GaN based devices with several hundreds nano-scale periodic structure fabricated by nano-imprint technique Mitsuaki Tohno, Zhang Jing, Yoshiki Naoi, Shiro Sakai (Univ. of Tokushima), Junzo Wachi (SCIVAX Corp.) (8) 13:35 - 14:00 Reduction of reverse-bias current in GaN-based metal-oxide-semiconductor diodes operating in UV spectral region Tohru Honda, Shigetoshi Komiyama, Yoshihiro Mashiyama, Kenji Watanabe (Kogakuin Univ.) (9) 14:00 - 14:25 A GaN-based Surface-emitting Laser with 45°-inclined Mirror in Horizontal-Cavity Masao Kawaguchi, Satoshi Tamura, Masaaki Yuri (Panasonic) ----- Break ( 10 min. ) ----- (10) 14:35 - 15:00 High-Power GaN-based Blue-Violet Laser Diodes Shingo Kameyama, Yasumitsu Kunou, Kyouji Inoshita, Daijiro Inoue, Yasuyuki Bessho, Takenori Goto, Tatsuya Kunisato (SANYO) (11) 15:00 - 15:25 Achieving P-type InN and Its Characterization -- Present Status and Future Prospects -- Akihiko Yoshikawa, Xinqiang Wang, Song-Bek Che, Yoshihiro Ishitani (Chiba Univ.) (12) 15:25 - 15:50 Ultraghin InN/(In)GaN quantum well structure for a new active layer of blue-green light Song-Bek Che, Akihiko Yuki, Hiroshi Watanabe, Yoshihiro Ishitani, Akihiko Yoshikawa (Chiba Univ.) (13) 15:50 - 16:15 Emission color tunable light-emitting diodes based on multi-facetted InGaN/GaN quantum wells Mitsuru Funato, Keita Hayashi, Masaya Ueda, Yoichi Kawakami (Kyoto Univ.), Yukio Narukawa, Takashi Mukai (Nichia Corp.) ----- Break ( 10 min. ) ----- (14) 16:25 - 16:50 Control of substrate curvature during MOVPE growth of AlGaN Yuya Ogawahara, Mitsuhisa Narukawa, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.) (15) 16:50 - 17:15 Low-pressure HVPE growth and characterization of AlN on period-trench-pattered substrate Yusuke Katagiri, Kazuteru Okuura, Jiejun Wu, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Tetsuya Ezaki, Noriyuki Kuwano (Kyushu Univ.) (16) 17:15 - 17:40 Toward high-power operation of 230nm-band AlGaN UV-LED Norimichi Noguchi (RIKEN/Saitama Univ./JST CREST), Hideki Hirayama (RIKEN/JST CREST), Jun Norimatsu (RIKEN/Saitama Univ.), Norihiko Kamata (Saitama Univ./JST CREST) (17) 17:40 - 18:05 270 nm-band AlGaN deep-UV LEDs fabricated on ELO-AlN template Jun Norimatsu, Hideki Hirayama, Sachie Fujikawa, Norimichi Noguchi (RIKEN), Takayoshi Takano (Matsushita Electric Works), Kenji Tsubaki (RIKEN), Norihiko Kamata (Saitama University/JST CREST) ---------------------------------------- Fri, Nov 28 AM (09:00 - 16:35) ---------------------------------------- (18) 09:00 - 09:25 280nm-band InAlGaN-based high-power deep-UV LEDs Hideki Hirayama, Sashie Fujikawa (RIKEN), Takayoshi Takano, Kenji Tsubaki (Matsushita Electric Works Ltd.) (19) 09:25 - 09:50 Analysis of AlGaN Growth on MOVPE by Computational Simulation Akira Hirako, Masaya Ichikawa, Kennichi Nakamura, Kazuhiro Ohkawa (Tokyo Univ. of Sci.) (20) 09:50 - 10:15 Luminescence properties from two types of prismatic planes of InGaN Hisashi Kanie, Kenichi Akashi, Hidemi Tumuki (Tokyo University of Science) (21) 10:15 - 10:40 Theroretical Calculations of Polarization Properties in InGaN Quantum Wells on Non-C (Al)InGaN Alloy Substrates Atsushi Yamaguchi (Kanazawa Inst. of Technology) ----- Break ( 10 min. ) ----- (22) 10:50 - 11:15 Two-Dimensional Analysis of Field-Plate Effects on Buffer-Related Lag Phenomena and Current Collapse in AlGaN/GaN HEMTs Atsushi Nakajima, Keiichi Itagaki, Kazushige Horio (Shibaura Inst. Tech.) (23) 11:15 - 11:40 Optimum Design of AlGaN/GaN HEMTs with Field Plate Ryosuke Sakai, Tomotaka Okai, Kenji Shiojima, Masaaki Kuzuhara (Univ. of Fukui) (24) 11:40 - 12:05 Device simulation of HfO2/AlGaN/GaN MOSFET -- effects of HfO2/AlGaN interface -- Yoshihisa Hayashi, Shun Sugiura, Shigeru Kishimoto, Takashi Mizutani (Nagoya Univ.) ----- Lunch Break ( 60 min. ) ----- (25) 13:05 - 13:30 Fabrication and Characterization of AlGaN/GaN MOSFETs with HfO2 Gate Insulator deposited by ALD Yuji Goda, Yoshihisa Hayashi, Yutaka Ohno, Shigeru Kishimoto, Takashi Mizutani (Nagoya Univ.) (26) 13:30 - 13:55 Normally-off mode AlGaN/GaN HEMTs with p-InGaN Cap Layer Xu Li, Masahito Kurouchi, Shigeru Kishimoto, Takashi Mizutani (Nagoya Univ.), Fumihiko Nakamura (POWDEC) (27) 13:55 - 14:20 An Over 100 W AlGaN/GaN Enhancement-Mode HEMT Power Amplifier Toshihiro Ohki, Toshihide Kikkawa, Masahito Kanamura, Kenji Imanishi, Kozo Makiyama, Naoya Okamoto, Kazukiyo Joshin, Naoki Hara (Fujitsu, Fujitsu Labs.) (28) 14:20 - 14:45 Study on AlGaN/GaN HEMTs on Si(111) substrates with thick AlGaN/GaN, GaN/AlN and AlGaN/AlN multilayers Takaaki Suzue, Masanori Suzuki, Yukiyasu Nomura, Takashi Egawa (Nagoya Inst. of Tech.) ----- Break ( 10 min. ) ----- (29) 14:55 - 15:20 Flat Surface and High Electron Mobility of InAlN/AlGaN/AlN/GaN Heterostructures Masanobu Hiroki, Narihiko Maeda, Takashi Kobayashi (NTT) (30) 15:20 - 15:45 Depth profiles of strain in AlGaN/GaN heterostructures grown on si by electron backscatter diffraction technique Teruki Ishido, Hisayoshi Matsuo, Takuma Katayama, Tetsuzo Ueda, Kaoru Inoue, Daisuke Ueda (Panasonic) (31) 15:45 - 16:10 Simulation of Bending Deformation and Two-dimensional Electron Gas Density in AlGaN/GaN Hetero Structure Hajime Tsukahara, Seiji Nakamura, Tsugunori Okumura (Tokyo Metropolitan univ.) (32) 16:10 - 16:35 Detection mechanisms of Pd/AlGaN/GaN HEMT-based hydrogen gas sensors Noriyuki Takahashi, Seiji Nakamura, Tsugunori Okumura (Tokyo Metropolitan Univ) === Technical Committee on Electron Device (ED) === # FUTURE SCHEDULE: Fri, Dec 19, 2008 - Sat, Dec 20, 2008: Tohoku Univ. [Fri, Oct 17], Topics: Millimeter-wave, THz-wave Devices and Systems Wed, Jan 14, 2009 - Fri, Jan 16, 2009: Kikai-Shinko-Kaikan Bldg [Mon, Nov 10], Topics: Compound Semiconductor ICs, High-speed and high-frequency devices Thu, Feb 26, 2009 - Fri, Feb 27, 2009: Hokkaido Univ. [Mon, Dec 8], Topics: Functional nanodevices and related technologies # SECRETARY: Koichi Murata（NTT) TEL：046-240-2871、FAX：046-270-2872 E-mail：     aecl   Hara Naoki （Fujitsu Lab.） TEL : 046-250-8242、FAX : 046-250-8168 E-mail :   o      Kunio Tsuda（Toshiba） TEL : 044-549-2142、FAX : 044-520-1501 E-mail :   o   ba=== Technical Committee on Lasers and Quantum Electronics (LQE) === # FUTURE SCHEDULE: Fri, Dec 12, 2008: Kikai-Shinko-Kaikan Bldg. [Fri, Oct 17] Thu, Jan 29, 2009 - Fri, Jan 30, 2009: Kyoto Institute Technology (Matsugasaki Campus) [Thu, Nov 13] # SECRETARY: Takayuki Yamanaka (NTT Corporation) TEL +81-46-240-4403, FAX +81-46-240-2859 E-mail: t   aecl# ANNOUNCEMENT: # Homepage of LQE is http://www.ieice.org/~lqe/jpn/ === Technical Committee on Component Parts and Materials (CPM) === # FUTURE SCHEDULE: Fri, Jan 23, 2009: Kikai-Shinko-Kaikan Bldg. [Mon, Nov 10] # SECRETARY: Hidehiko Shimizu（Niigata University） TEL 025-262-6811, FAX 025-262-6811 E-mail:   engi -u Yasushi Takemura（Yokohama National University） TEL 045-339-4151, FAX 045-339-4151 E-mail:  y Last modified: 2008-10-31 19:42:16 |
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